A gallium nitride-based light-emitting device

Abstract

The invention discloses a gallium-nitride-based light-emitting device comprising a substrate, a nucleating layer, a type-n III nitride layer, a multi-quantum well active region, last quantum barrier layer, an electron-like barrier layer, a type-p III nitride layer, a type-n metal electrode, and a type-p metal electrode. Negative pure polarization charge exists in an interface between the last quantum barrier layer and the electron-like barrier layer. Compared to the existing GaN LQB / AlGaN EBL structure (having positive pure polarization charge in the interface) or polarization-matched GaN LQB / AIInGaN EBL structure (having zero pure polarization charge in the interface), the gallium-nitride-based light-emitting device has the advantages that the effect of an electron barrier layer blocking electron leakage can be enhanced, LED luminous efficiency is improved accordingly, and attenuation of luminous efficiency under high injected current is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a gallium nitride-based light-emitting device, in particular to a gallium-nitride-based light-emitting device which utilizes negative interface net polarization charges to limit electron current leakage. Background technique [0002] In gallium nitride-based light-emitting diodes (LEDs), electron current leakage caused by electron-hole injection mismatch is the main reason for limiting LED luminous efficiency and causing luminous efficiency decay under high current. The mismatch of electron hole injection comes from the fact that the hole concentration in the P region is lower than the electron concentration in the n region, and the hole mobility is low and the effective mass is large. For GaN-based LEDs grown on polar faces, the polarization effect will further aggravate the electron current leakage. In order to reduce the electron current leakage, it is very...

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Problems solved by technology

However, the thus obtained Al x Ga 1-x N LQB / Al y Ga 1-y NEBL (0≤x<y≤1) interface will accumulate positive polarization charges, resulting in a downward shift of the energy band, which is not conducive to blocking electron leakage, even if the Al composition of EBL is increased, it will not help, because the composition of LQB and EBL is poor The larger the value, the stronger the polarization, and the more serious the energy band shifts down

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