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Single crystal furnace heat shield and preparation method thereof

A heat shield and single crystal furnace technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of affecting the quality of crystal growth, high processing cost of tungsten cylinder, expensive manufacturing cost, etc., to reduce Enterprise operating cost, good compactness and thermal stability, and excellent thermal insulation effect

Inactive Publication Date: 2014-03-19
中山兆龙光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high price of tungsten in this structure, the large amount of tungsten used makes the manufacturing cost too expensive, and the processing cost of tungsten cylinder is high and the technology is complicated
In addition, the surface of the tungsten cylinder close to the heating body is easy to oxidize and volatilize at high temperature, which affects the quality of crystal growth

Method used

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  • Single crystal furnace heat shield and preparation method thereof
  • Single crystal furnace heat shield and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0036] like figure 1 The shown heat shield of a single crystal furnace of the present invention comprises a furnace body 1, a zirconia ceramic insulation bucket 2 is arranged in the furnace body 1, and a nano-tungsten film layer is coated on the inner wall of the insulation bucket 2 3. A thin-walled molybdenum cylinder 4 is provided on the outer wall of the zirconia ceramic insulation barrel 2 .

[0037] The zirconia ceramic insulation bucket 2 described in the present invention is formed by stacking several arc-shaped zirconia ceramic bricks 5 . The structure of the arc-shaped zirconia ceramic tile 5 is as figure 2 shown. The arc-shaped zirconia ceramic bricks described therein are doped with 3% Y by zirconia powder 2 o 3 The powder is compacted and sintered at high temperature. The thickness of the arc-shaped zirconia ceramic tile 5 is 40mm.

[0038] The nano-tungsten film layer 3 described in the present invention is plated on the inner wall of the heat preservation ...

Embodiment 2

[0048] like figure 1 The shown heat shield of a single crystal furnace of the present invention comprises a furnace body 1, a zirconia ceramic insulation bucket 2 is arranged in the furnace body 1, and a nano-tungsten film layer is coated on the inner wall of the insulation bucket 2 3. A thin-walled molybdenum cylinder 4 is provided on the outer wall of the zirconia ceramic insulation barrel 2 .

[0049] The zirconia ceramic insulation bucket 2 described in the present invention is formed by stacking several arc-shaped zirconia ceramic bricks 5 . The structure of the arc-shaped zirconia ceramic tile 5 is as figure 2 shown. The arc-shaped zirconia ceramic brick 5 is made of zirconia powder doped with 3% Y 2 o 3 The powder is compacted and sintered at high temperature. The thickness of the arc-shaped zirconia ceramic tile 5 is 50 mm.

[0050] The nano-tungsten film layer 3 described in the present invention is plated on the inner wall of the heat preservation barrel 2 by ...

Embodiment 3

[0060] like figure 1 The shown heat shield of a single crystal furnace of the present invention comprises a furnace body 1, a zirconia ceramic insulation bucket 2 is arranged in the furnace body 1, and a nano-tungsten film layer is coated on the inner wall of the insulation bucket 2 3. A thin-walled molybdenum cylinder 4 is provided on the outer wall of the zirconia ceramic insulation barrel 2 .

[0061] The zirconia ceramic insulation bucket 2 described in the present invention is formed by stacking several arc-shaped zirconia ceramic bricks 5 . The structure of the arc-shaped zirconia ceramic tile 5 is as figure 2 shown. The arc-shaped zirconia ceramic brick 5 is made of zirconia powder doped with 3% Y 2 o 3 The powder is compacted and sintered at high temperature. The thickness of the arc-shaped zirconia ceramic brick is 60mm.

[0062] The nano-tungsten film layer 3 described in the present invention is plated on the inner wall of the heat preservation barrel 2 by ma...

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Abstract

The invention discloses a single crystal furnace heat shield and its preparation method. The single crystal furnace heat shield comprises a furnace body, which is internally provided with a zirconia ceramic heat insulation barrel. A nano-tungsten film layer is plated on a heat insulation barrel inner wall, and a thin-wall molybdenum cylinder is disposed on a zirconia ceramic heat insulation barrel outer wall. The preparation method includes: doping zirconia powder with 3% Y2O3 powder to prepare an arc zirconia ceramic tile; using argon as a working gas, in a magnetron sputtering room, conducting direct current sputtering on a flake tungsten target material with purity of 99.99%, and sputtering the nano-tungsten film layer on the treated arc zirconia ceramic tile inner wall; employing the arc zirconia ceramic tile plated with the nano-tungsten film layer to pile the cylindrical zirconia ceramic heat insulation barrel in the furnace body; and disposing the thin-wall molybdenum cylinder outside the zirconia ceramic heat insulation barrel. The invention aims to provide the single crystal furnace heat shield and its preparation method. The single crystal furnace heat shield has the advantages of simple structure, low price, stable performance, and can effectively guarantee the good thermal insulation property needed by sapphire single crystal growth.

Description

technical field [0001] The invention relates to a heat shield of a single crystal furnace, in particular to a heat shield used for a sapphire single crystal furnace of the Kyropoulos method, and also relates to a method for preparing the heat shield of the single crystal furnace. Background technique [0002] Sapphire α-Al 2 o 3 Also known as white gemstone, it has good optical, mechanical, chemical and electrical properties, and is widely used in various production fields and LED and military industries. [0003] Sapphire substrates occupy 92% of the market share of LED substrates, and sapphire single crystal furnaces are important equipment for growing crystals, and the design and transformation of their temperature fields directly affect the quality and cost of sapphire crystals. The heat shield is the most important device for heat insulation in the sapphire single crystal furnace, which is used to ensure the temperature uniformity of the heat field in the furnace and ...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B17/00C23C14/18C23C14/35C04B35/48
Inventor 李海瑞翟剑庞黄镜蓁潘丽青刘凯歌
Owner 中山兆龙光电科技有限公司
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