Multiaxial capacitive accelerometer and acceleration detection method

An accelerometer and capacitive technology, applied in the field of micro-electromechanical structures, can solve the problems of temperature drift and impact resistance performance that cannot meet the requirements, and achieve the effects of reducing deformation, improving sensitivity, and reducing temperature drift

Active Publication Date: 2014-03-19
HANGZHOU SILAN MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been found in practice that the temperature drift and shock resistance performance of current multi-axis capacitive accelerometers still cannot meet the requirements

Method used

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  • Multiaxial capacitive accelerometer and acceleration detection method
  • Multiaxial capacitive accelerometer and acceleration detection method
  • Multiaxial capacitive accelerometer and acceleration detection method

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Embodiment 1

[0039] The multi-axis capacitive accelerometer of this embodiment is a two-axis capacitive accelerometer, that is, X and Y axis accelerometers. figure 1 It is the overall schematic diagram of the multi-axis capacitive accelerometer of this embodiment. Such as figure 1 As shown, the multi-axis capacitive accelerometer includes a substrate ( figure 1 Not shown) and an XY-axis structure layer, the XY-axis structure layer includes a movable mass 31, a central anchor point 32, an elastic structure 33, and detection electrodes 34a, 34b.

[0040] Continue to refer figure 1 In this embodiment, the XY axis structure layer 1a includes a total of eight detection electrodes, and the eight detection electrodes are symmetrically distributed at the four vertex corners of the movable mass 31. This placement method effectively utilizes the chip area and is beneficial to increase acceleration. The sensitivity of the meter. In detail, four detection electrodes 34a are symmetrically distributed on t...

Embodiment 2

[0049] The multi-axis capacitive accelerometer in this embodiment is a three-axis capacitive accelerometer, that is, it includes the X- and Y-axis accelerometers as described in the first embodiment, and also includes a Z-axis accelerometer. Specific as Image 6 As shown, the X and Y-axis accelerometers include an XY-axis structure layer 1a, and the Z-axis accelerometer includes torsion-type Z-axis structure layers 1b, 1c located on both sides of the XY-axis structure layer 1a, and the XY-axis structure The layer 1a has a square shape as a whole, and the Z-axis structure layers 1b and 1c have a rectangular shape as a whole to save area as much as possible.

[0050] Figure 7 Yes Image 6 A schematic cross-sectional view along line a when the substrate of the structure shown is warped, Figure 8 Yes Image 6 Schematic diagram of the middle Z-axis structure layer 1b. Such as Figure 6 to Figure 8 As shown, the Z-axis structure layer 1b, 1c includes: movable masses 17, 18, fixed an...

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Abstract

The invention provides a multiaxial capacitive accelerometer and an acceleration detection method. Two Z axis structure layers of a Z axis accelerometer of the multiaxial capacitive accelerometer are placed on two sides of an X and Y axis accelerometer respectively. By using the above structure, an error caused by packaging deformation can be reduced so that sensitivity of the multiaxial capacitive accelerometer is increased.

Description

Technical field [0001] The invention relates to a microelectromechanical structure for detecting acceleration, in particular to a multi-axis capacitive accelerometer and an acceleration detection method. Background technique [0002] The Micro-Electro-Mechanic System (MEMS) inertial sensor made by surface technology is a three-dimensional micro-mechanical structure prepared by multiple thin film deposition and pattern processing on a silicon wafer as the substrate. Commonly used thin film layer materials include: polysilicon, silicon nitride, silicon dioxide and metals. Typical process steps include: substrate preparation, primary oxidation to form an insulating layer, deposition of a first layer of polysilicon, etching of polysilicon to form electrodes and interconnects, secondary oxidation to form a sacrificial layer, etching of the oxide layer to form through holes, and deposition The second layer of polysilicon is deposited, a metal layer is etched to form interconnection li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/125G01P15/18
Inventor 汪建平邓登峰
Owner HANGZHOU SILAN MICROELECTRONICS
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