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Forming method of through hole or contact hole

A contact hole, dry etching technology, applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as deformation, affecting the surface morphology of through holes, reducing process stability, etc. , to avoid leakage phenomenon, to ensure the effect of process stability

Active Publication Date: 2016-06-01
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Application Information

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Problems solved by technology

[0005] Another existing method is to improve the dry etching method to achieve a greater critical dimension bias (that is, the CD after etching minus the CD before etching (that is, the CD after lithography exposure)), which is mainly by changing The gas composition in the dry etching process can be realized by changing the ratio of the passivation composition in the plasma, but the negative effect is that it will affect the surface morphology of the through hole, causing deformation, and the process stability is also reduced

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  • Forming method of through hole or contact hole
  • Forming method of through hole or contact hole
  • Forming method of through hole or contact hole

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no. 1 example

[0031] Please also see Figure 3a to Figure 3f , the method for forming a contact hole in this embodiment includes the following steps.

[0032] Step S01, providing a semiconductor structure, which includes a silicon substrate 21 on which a contact hole is to be formed, and the silicon substrate 21 sequentially includes an interlayer dielectric layer 31, an amorphous carbon layer 32, and a silicon oxynitride layer from bottom to top. 33 . The organic medium layer 34 and the SOG layer 35 .

[0033] Step S02, coating the photoresist 36 on the SOG layer 35 of the top layer, patterning the photoresist 36, the position of the pattern 361 in the photoresist 36 corresponds to the contact hole to be formed, as Figure 3a As shown, the first pattern 351 is formed on the SOG layer 35 at the position of the pattern 361 by the first dry etching and the organic medium layer 34 is exposed, so as to reduce the critical dimension, as Figure 3b shown.

[0034] Wherein, the first dry etchin...

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Abstract

The invention discloses a method for forming a through hole or a contact hole. The method comprises the steps of forming a first pattern on an SOG layer at the top through photoresist, removing the photoresist and forming a second pattern on an organic dielectric layer, removing the SOG layer and forming a third pattern on a passivation film layer, removing the organic dielectric layer and forming a fourth pattern on an amorphous carbon layer, removing the passivation film layer and forming a fifth pattern on an interlayer dielectric layer, thus obtaining a semiconductor structure having a through hole or a contact hole. According to the method, the critical dimension is gradually decreased through conversion among a plurality of masks so that a through hole or a contact hole with smaller critical dimension is finally obtained.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a through hole or a contact hole based on a multilayer mask conversion pattern. Background technique [0002] In the field of through-hole etching technology in existing semiconductor devices, lithographic alignment deviation is one of the main technical problems in the through-hole etching process. Taking contact hole etching as an example, figure 1 For the etching effect during perfect alignment of photolithography, it can be seen that the bottom of the contact hole 11 is in complete contact with the nickel silicide 12, and the side wall of the contact hole 11 is far from the silicon gate 13, and the two can withstand under the protection of the side wall. higher gate voltage; and figure 2 It is the etching effect when the lithographic alignment deviates. It can be found that most of the bottom of the contact hole has deviated from the nickel si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/027H01L21/033
CPCH01L21/31116H01L21/31138H01L21/31144H01L21/76805H01L2221/101
Inventor 李程吴敏杨渝书
Owner SHANGHAI HUALI MICROELECTRONICS CORP