High temperature resistance electronic device raw material and application thereof

Abstract

The invention relates to a high temperature resistance electronic device raw material and application thereof and particularly relates to the raw material applied to an electronic device in an underground drilling tool circuit of a petroleum logging. A structure of the electronic device raw material comprises a substrate layer, an insulative buried layer, a conductor layer and an electrode, wherein the insulative buried layer is arranged at an upper surface of the substrate layer, the conductor layer is arranged at an upper surface of the insulative buried layer, the electrode is arranged at an upper surface of the conductor layer, the substrate layer employs a Si material, the insulative buried layer employs an AlN material, the conductor layer employs a SiC material, and the electrode employs a tungsten material. The high temperature resistance electronic device raw material prepared by employing SiCOI, silicon carbide at the insulative buried layer, can effectively avoid increase of leakage current, prevents a latch-up effect, further has a more stable threshold voltage under high temperature and is suitable for being selected as the raw material applied to the electronic device in the underground drilling tool circuit of the petroleum logging under a high temperature environment.

Description

technical field [0001] The invention relates to a high-temperature-resistant electronic device raw material and its application, and belongs to the technical field of semiconductor material application. Background technique [0002] With the continuous development of oil drilling technology, downhole drilling tools need to adapt to complex and harsh environments, especially devices and circuits that can work at high temperatures. At present, bulk silicon devices used in downhole drilling tool circuits cannot work in a high temperature environment above 250°C due to the increase of leakage current at high temperature, the drift of threshold voltage, and the thermally induced latch-up effect. Signals from sensors in high-temperature environments are transmitted to remote processors through wires or complex cooling systems are used to keep the processors on the equipment at an appropriate temperature. The former increases the length of wires and the number of joints, leading t...

AI Technical Summary

Problems solved by technology

Although the CMOS circuit with SOI structure (with silicon dioxide as the insulating buried layer) eliminates the latch-up effect excited at high temperature and has a small high-temperature leakage current, however, when working at high temperature downhole, due to the thermal conductivity of silicon dioxide Poor, the heat generated inside the device is difficult to dissipate, and there are self-heating effects and parasitic capacitance, which lead to heat accumulation and temperature rise of the device, resulting in deterioration of the electrical parameter characteristics of the device or even failure

Images