Hexafluoroethane purification method

A technology of hexafluoroethane and purification methods, which is applied in the disproportionation separation/purification of halogenated hydrocarbons, organic chemistry, etc., can solve the problems of insufficient removal depth, enhanced adsorbent, etc., and achieve improved purity, reduced regeneration times, and high selectivity sexual effect

Active Publication Date: 2014-03-26
FOSHAN HUATE GASES +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the embodiments of the present invention is to provide a method for purifying hexafluoroethane, which solves the problem of CO in hexafluoroethane 2 and H 2 O removal depth is not enough and the introduction of anhydrous HCl causes potential safety hazards, reduce energy consumption, enhance the adsorption effect of the adsorbent, and make the hexafluoroethane product reach a purity of more than 99.9995%.

Method used

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  • Hexafluoroethane purification method

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Effect test

Embodiment 1

[0080] Pass the raw material of hexafluoroethane into the first rectification tower, at -40°C, 0.5MPa, and the vent flow rate is 1Nm 3 Perform a rectification under the condition of one rectification; pass the hexafluoroethane raw material that has undergone the first rectification into the second rectification tower at -57°C, 0.18MPa, and the vent flow rate is 0.5Nm 3 Secondary rectification is carried out under the condition of / h; the first adsorbent used includes CO 2 The special adsorbent is the first adsorbent a and 3A molecular sieve is used as the first adsorbent b to carry out low-temperature adsorption; the raw material of hexafluoroethane that has undergone low-temperature adsorption is under the pressure condition of 0.6MPa, and is made of 5A and 13X molecular sieves Molecular sieves mixed at a ratio of 1:1.5 are used as the second adsorbent for pressurized adsorption to finally obtain a hexafluoroethane product with a purity of more than 99.9995%, and the volume c...

Embodiment 2

[0083] Pass the raw material of hexafluoroethane into the first rectification tower, at -67.2°C, 0.3MPa, and the vent flow rate is 0.5Nm 3 Carry out a rectification under the condition of one rectification; pass the hexafluoroethane raw material that has undergone the first rectification into the second rectification tower, at -59.6°C, 0.32MPa, and the vent flow rate is 0.8Nm 3 Secondary rectification is carried out under the condition of / h; the first adsorbent used includes CO 2 The special adsorbent is the first adsorbent a and the molecular sieve mixed with 4A and 13X molecular sieve at a ratio of 1:2 is the first adsorbent b for low-temperature adsorption; Under the pressure conditions of 5A and 13X molecular sieves mixed at a ratio of 1:1.8 as the second adsorbent for pressurized adsorption, hexafluoroethane products with a purity of more than 99.9995% are finally obtained, and the hexafluoroethane The volume concentration of impurities contained in the product is N 2 ...

Embodiment 3

[0086] Pass the raw material of hexafluoroethane into the first rectification tower, at -38°C, 0.8MPa, and the vent flow rate is 0.7Nm 3 Carry out a rectification under the condition of one rectification; pass the hexafluoroethane raw material that has undergone the first rectification into the second rectification tower, at -60.8°C, 0.17MPa, and the vent flow rate is 0.4Nm 3 Secondary rectification is carried out under the condition of / h; the first adsorbent used includes CO 2 The special adsorbent is the first adsorbent a and 13X molecular sieve is used as the first adsorbent b for low-temperature adsorption; the hexafluoroethane raw material that has undergone low-temperature adsorption is under the pressure of 1 MPa, and the hexafluoroethane raw material is made of 5A and 13X molecular sieve. Molecular sieves mixed at a ratio of 1:2 are used as the second adsorbent for pressurized adsorption, and finally a hexafluoroethane product with a purity of more than 99.9995% is ob...

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Abstract

The invention discloses a hexafluoroethane purification method which comprises the following steps: rectifying a hexafluoroethane raw material under the conditions of (-70)-(-35) DEG C and 0.1-1 MPa; performing low-temperature adsorption on the rectified hexafluoroethane raw material under the temperature conditions of (-100)-(-70) DEG C; and performing pressurized adsorption on the hexafluoroethane raw material after low-temperature adsorption under the pressure conditions of 0.5-1.5 MPa, thus obtaining the hexafluoroethane product, wherein the CO2 volume concentration of the hexafluoroethane product is no more than 0.5 ppm, and the H2O volume concentration is no more than 1 ppm. According to the invention, the problem that potential safety hazard is caused due to insufficient CO2 and H2O removal depth and introduction of anhydrous HCl in hexafluoroethane is solved, the energy consumption is reduced, and the adsorption effect of adsorbent is enhanced; and the purity of the hexafluoroethane product is up to 99.9995% or above, thus meeting the requirements for electronic specific gas in the semiconductor and micro-electronics industry.

Description

technical field [0001] The invention relates to gas separation technology, in particular to a method for purifying hexafluoroethane. Background technique [0002] Hexafluoroethane is used in the semiconductor and microelectronics industries as plasma etching gas, device surface cleaning, optical fiber production and cryogenic refrigerants. Because of its non-toxic, odorless and high stability, it is widely used in the semiconductor manufacturing process, such as an etchant (Dry Etch), and a cleaning chamber after Chemical Vapor Deposition (CVD, Chemical Vapor Deposition). In the plasma process, it is used as a dry etching gas for silicon dioxide and phosphosilicate glass. In recent years, with the rapid development of the semiconductor industry, the requirements for the purity of electronic special gas are getting higher and higher, and hexafluoroethane has solved the problem of Conventional wet etching cannot meet the problem of high-precision thin-line etching of deep su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C19/08C07C17/38
Inventor 马建修杜汉盛陈艳珊石平湘
Owner FOSHAN HUATE GASES
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