Pre-cleaning agent for silicon wafer

A pre-cleaning agent and technology for silicon wafers, applied in the field of cleaning agents, can solve problems affecting processing technology, affecting yield and product quality, and white spots on the surface of silicon wafers, and achieve the effect of improving high-quality rate and efficiency

Inactive Publication Date: 2014-03-26
孙爱玲
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, during the storage and transportation of silicon wafers, because the pollutants remain on the surface of silicon wafers for too long, the pollutants are oxidized, and the oxidized pollutants are strongly adsorbed on the surface of silicon wafers, which cannot be thoroughly cleaned by current cleaning methods.
The existence of these pollutants will affect the later processing technology, so that there are too many residual compounds, metal pollutants and acid and alkali residues on the surface of the silicon wafer during texturing, causing white spots on the surface of the silicon wafer, resulting in chromatic aberration, and reducing the conversion of solar cells. Efficiency, affecting yield and product quality

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The silicon chip pre-cleaning agent provided by the present invention is composed of the following components according to the weight ratio: 15 parts of surfactant, 25 parts of nitric acid, 2 parts of triethanolamine, 2 parts of citric acid, and 1 part of hydrofluoric acid , 2 parts of hydrogen peroxide, and the rest are deionized water; the surfactant is sodium dodecylbenzenesulfonate and fatty alcohol polyoxyethylene ether sodium sulfate, the ratio is 1:1; the concentration of the nitric acid is 25% , the concentration of citric acid is 5%.

[0015] The using method of silicon wafer pre-cleaning agent of the present invention may further comprise the steps:

[0016] (1) Soak and clean the silicon wafer with deionized water, and the soaking time is controlled at 3 minutes to 5 minutes;

[0017] (2) Use the above-mentioned silicon wafer pre-cleaning agent to soak and clean the silicon wafer, the soaking temperature is 20°C~30°C, and the soaking time is 2 minutes to 4 m...

Embodiment 2

[0021] The silicon wafer pre-cleaning agent provided in this embodiment is composed of the following components according to the weight ratio: 20 parts of surfactants, 40 parts of nitric acid, 5 parts of triethanolamine, 2 parts of citric acid, and 1 part of hydrogen Fluoric acid, 2 parts of hydrogen peroxide, all the other are deionized water; the surfactant is sodium dodecylbenzenesulfonate and fatty alcohol polyoxyethylene ether sodium sulfate, the ratio is 1:1; the concentration of the nitric acid is 25%, and the concentration of citric acid is 5%.

[0022] Utilize the silicon wafer precleaning agent that present embodiment obtains, and its using method is identical with above-mentioned embodiment 1. In addition, using it to clean silicon wafers can also make the cleanliness of silicon wafers reach more than 99%.

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PUM

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Abstract

The invention discloses a pre-cleaning agent for a silicon wafer. The pre-cleaning agent comprises components in parts by weight as follows: 15-20 parts of a surface active agent, 25-40 parts of nitric acid, 2-5 parts of triethanolamine, 2 parts of citric acid, 1 part of hydrofluoric acid, 2 parts of hydrogen peroxide and the balance of deionized water. The obtained pre-cleaning agent for the silicon wafer integrates characteristics of an organic cleaning agent and an inorganic cleaning agent, and can effectively remove various pollutants on the surface of the silicon wafer, and a good condition is created for a texturing technology of the silicon wafer, so that the merit factor and efficiency of a solar cell are improved.

Description

technical field [0001] The invention relates to a cleaning agent, especially a silicon chip pre-cleaning agent. Background technique [0002] Usually, there will be various pollutants on the surface of the silicon wafer, that is, the surface contamination of the silicon wafer, including particles, metals, organic matter, moisture molecules and natural oxides deposited on the silicon surface. These pollutants are formed when silicon rods are cut into silicon wafers, due to the metal particles and silicon particles produced by the abrasion of the cutting line and silicon wafers, and the residues of auxiliary agents and adhesives used in the cutting process. In addition, during the storage and transportation of silicon wafers, because the pollutants remain on the surface of the silicon wafer for too long, the pollutants are oxidized, and the oxidized pollutants are strongly adsorbed on the surface of the silicon wafers, which cannot be thoroughly cleaned by the current cleaning...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/37C11D3/60C11D3/39
Inventor 孙爱玲
Owner 孙爱玲
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