Semiconductor structure and manufacture method thereof
A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as poor adhesion, affect the performance of semiconductor devices, etc., and achieve the effect of improving performance
Active Publication Date: 2014-03-26
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0009] After testing, it was found that the adhesion between the barrier layer 20 and the copper metal layer in close contact with the barrier layer 20 in the above semiconductor structure is very poor, thereby affecting the performance of the semiconductor device
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[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0034] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.
[0035] As mentioned in the background section, the adhesion between the barrier layer and the copper metal layer in the semiconductor structure in the prior art is poor, thereby affecting the performance of the semiconductor device.
[0036] The inventor found that: before the ultraviolet treatment of the interlayer dielectric layer, the stress of the barrier layer (such as: nitrogen-containing silicon carbide) between the interlayer diele...
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Abstract
The invention provides a semiconductor structure and a manufacture method thereof. The semiconductor structure includes a semiconductor substrate which includes a copper metal layer, a barrier layer which is located on the copper metal layer, a light shielding layer which is located on the barrier layer and is at least used for shielding ultraviolet, and an interlayer dielectric layer which is located on the light shielding layer and is made of a low-K or over-K cellular material. The manufacturing method of the semiconductor structure includes the following steps that: the semiconductor substrate is provided, wherein the semiconductor substrate comprises the copper metal layer; the barrier layer is formed on the copper metal layer; a light shielding layer is formed on the barrier layer, wherein the light shielding is at least used for shielding the ultraviolet; and the low-K or over-K cellular interlayer dielectric layer is formed on the light shielding layer; and ultraviolet treatment is performed on the interlayer dielectric layer. With the semiconductor structure and the manufacture method thereof adopted, the binding force between the barrier layer and the copper metal layer can be enhanced, and eventually, the performance of a semiconductor device can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor integrated circuit technology, the size of semiconductor devices and the size of interconnection structures are continuously reduced, which leads to the gradual reduction of the spacing between metal wirings, and the interlayer dielectric layer used to isolate metal wirings is also becoming more and more complex. Thinner and thinner, this will cause crosstalk between metal connections. Now, by reducing the dielectric constant of the interlayer dielectric layer between the metal wiring, this crosstalk can be effectively reduced, and the low K (dielectric constant) dielectric layer can effectively reduce the resistance-capacitance delay between the metal wiring layers (RC delay), therefore, low-K dielectric materials and u...
Claims
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IPC IPC(8): H01L23/522H01L21/768
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP