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Planar VDMOS (Vertical Double-Diffusion Metal-Oxide-Semiconductor) transistor and preparation method thereof

A transistor, planar technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of electromagnetic interference of switching circuits, high switching speed of planar VDMOS transistors, and reduce electromagnetic interference, The effect of reducing electromagnetic interference and reducing switching speed

Active Publication Date: 2014-03-26
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the applicant found that if the loss of the planar VDMOS transistor is too high and the switching speed is too fast, it is easy to cause electromagnetic interference problems in the switching circuit

Method used

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  • Planar VDMOS (Vertical Double-Diffusion Metal-Oxide-Semiconductor) transistor and preparation method thereof
  • Planar VDMOS (Vertical Double-Diffusion Metal-Oxide-Semiconductor) transistor and preparation method thereof
  • Planar VDMOS (Vertical Double-Diffusion Metal-Oxide-Semiconductor) transistor and preparation method thereof

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Embodiment Construction

[0032] The following descriptions of some of the many possible embodiments of the present invention are intended to provide a basic understanding of the invention, and are not intended to identify key or critical elements of the invention or to limit the scope of protection. It is easy to understand that, according to the technical solutions of the present invention, without changing the essential spirit of the present invention, those of ordinary skill in the art can propose other alternative implementation manners. Therefore, the following specific embodiments and accompanying drawings are only exemplary descriptions of the technical solutions of the present invention, and should not be regarded as all of the present invention or as limitations or restrictions on the technical solutions of the present invention.

[0033] In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and shape features such as rounding due to manufacturing processes such a...

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Abstract

The invention provides a planar VDMOS (Vertical Double-Diffusion Metal-Oxide-Semiconductor) transistor and a preparation method thereof and belongs to the field of VDMOS transistor devices. The planar VDMOS transistor comprises a substrate, an epitaxial layer, a body region, a source region, a gate dielectric layer and a gate electrode, wherein the epitaxial layer is formed on the substrate, the body region and the source region are formed in the epitaxial layer, and the gate dielectric layer is formed on the epitaxial layer. One or more grooves basically parallel to the channel direction of the planar VDMOS transistor are formed in the upper surface of part, of the epitaxial layer, corresponding to the gate dielectric layer, and the corresponding part, of the gate dielectric layer, above the grooves is correspondingly sunken to form a concave-convex gate dielectric layer. The planar VDMOS transistor has the characteristics of small on resistance, and small loss and no electromagnetic interference during switching application.

Description

technical field [0001] The invention belongs to the field of VDMOS (Vertical Double-diffused Metal-Oxide-Semiconductor, vertical double-diffused metal-oxide-semiconductor) transistor devices, and relates to a planar VDMOS transistor with a concave-convex gate dielectric layer and a preparation method thereof. Background technique [0002] DMOS (Double-diffused Metal-Oxide-Semiconductor, double-diffused metal-oxide-semiconductor) transistor is a kind of MOSFET, which has the characteristics of high power and high breakdown voltage, and is one of the common power devices. Generally, according to the orientation of the drift region in DMOS relative to the substrate surface, it can be divided into lateral DMOS (LDMOS) and VDMOS transistors; VDMOS transistors further include trench VDMOS transistors and planar VDMOS transistors. [0003] figure 1 Shown is a schematic diagram of a three-dimensional cell structure of a traditional planar VDMOS transistor. like figure 1 As shown,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L21/336
CPCH01L29/0603H01L29/42368H01L29/66712H01L29/7802
Inventor 唐红祥张新彭强
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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