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(Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film with both high voltage constant and high stored energy density and preparation method thereof

A high energy storage density, ferroelectric thin film technology, applied in the field of electronic functional materials and devices, can solve the problems of low breakdown electric field, poor piezoelectric performance, cannot be used as high energy storage circuit components, etc., and achieve excellent piezoelectric performance Effect

Inactive Publication Date: 2014-04-02
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although traditional piezoelectric materials (such as PZT, etc.) currently on the market have high piezoelectric constants, they cannot be used as high energy storage circuit components due to their low breakdown electric field and low energy storage density; Although many ferroelectric polymers (such as PVDF) and antiferroelectric materials have high energy storage density, their piezoelectric performance is very poor. If they are used as piezoelectric power generation devices, their piezoelectric conversion efficiency will be very low.

Method used

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  • (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film with both high voltage constant and high stored energy density and preparation method thereof
  • (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film with both high voltage constant and high stored energy density and preparation method thereof
  • (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film with both high voltage constant and high stored energy density and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] According to (Pb 0.9 Bi 0.1 )(Ni 0.05 Zr 0.05 Ti 0.9 )O 3 Chemical composition, weigh lead acetate trihydrate, titanium isopropoxide, bismuth nitrate pentahydrate, nickel acetate tetrahydrate and zirconium n-propoxide, as well as glacial acetic acid, deionized water, acetylacetone and formamide, in order to compensate for lead and bismuth in the heat treatment process In the loss of phosphate, lead nitrate trihydrate and bismuth nitrate pentahydrate are both excessively 5%. The prepared precursor solution has a concentration of 0.1 mol / L and a pH of 5.1.

[0029] The precursor solution prepared above was allowed to stand and age for 1 day to form a sol, and then spin-coated on the Pt / Ti / SiO 2 / Si substrate is prepared into a thin film, the spin coating speed is 2000 rpm, the time is 20s; then the coated sample is dried on the glue baking table at 80 ℃ for 1 min, and then placed in a rapid heat treatment furnace 400 Pyrolysis at ℃ for 3min; after repeating the process of "sp...

Embodiment 2

[0033] According to (Pb 0.8 Bi 0.2 )(Ni 0.1 Zr 0.1 Ti 0.8 )O 3 Chemical composition, weigh lead acetate trihydrate, titanium isopropoxide, bismuth nitrate pentahydrate, nickel acetate tetrahydrate and zirconium n-propoxide, as well as glacial acetic acid, deionized water, acetylacetone and formamide, in order to compensate for lead and bismuth in the heat treatment process In the loss, lead nitrate trihydrate and bismuth nitrate pentahydrate are both excessively 10%. The prepared precursor solution has a concentration of 0.2 mol / L and a pH value of 5.3.

[0034] After the precursor solution prepared above was allowed to stand and age for 3 days to form a sol, it was spin-coated on the Pt / Ti / SiO 2 / Si substrate was prepared into a thin film, the spin coating speed was 3000 rpm, and the time was 50s; then the coated sample was dried on a rubber baking table at 100 ℃ for 2 minutes, and then placed in a rapid heat treatment furnace 450 Pyrolysis at ℃ for 6min; after repeating the proc...

Embodiment 3

[0038] According to (Pb 0.7 Bi 0.3 )(Ni 0.15 Zr 0.15 Ti 0.7 )O 3 Chemical composition, weigh lead acetate trihydrate, titanium isopropoxide, bismuth nitrate pentahydrate, nickel acetate tetrahydrate and zirconium n-propoxide, as well as glacial acetic acid, deionized water, acetylacetone and formamide, in order to compensate for lead and bismuth in the heat treatment process In the loss of cyanide, lead nitrate trihydrate and bismuth nitrate pentahydrate have an excess of 20%. The prepared precursor solution has a concentration of 0.4 mol / L and a pH of 5.5.

[0039] After the precursor solution prepared above is allowed to stand and age for 5 days to form a sol, it is spin-coated on the Pt / Ti / SiO 2 / Si substrate is prepared into a thin film, the spin coating speed is 4000 rpm, the time is 40s; then the coated sample is dried on a baking platform at 150 ℃ for 3 minutes, and then placed in a rapid heat treatment furnace for 500 Pyrolysis at ℃ for 8min; after repeating the process of...

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Abstract

The invention belongs to the field of electronic functional materials and devices, and particularly relates to a (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film with both high voltage constant and high stored energy density and a preparation method thereof. The film belongs to Bi-system ferroelectric compound solid solution and is shown as the following chemical general formula: (Pb[1-x]Bix)(Nix / 2Zrx / 2Ti[1-x])O3, belonging to perovskite structure, wherein x is greater than 0 and less than 0.5. The preparation method comprises steps of weighing all the raw materials for preparation by the stoichiometric ratio according to the chemical general formula, depositing on a substrate so as to form the ferroelectric film with compact structure and homogeneous components. The film has excellent dielectric, ferroelectric and piezoelectric properties, particularly, very high breakdown field strength and stored energy density. Compared with the stored energy density of the existing capacitors in market, the stored energy density of the (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film is higher by one order of magnitudes, so that the (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film has great potential application prospect in piezoelectric devices and high power and high-capacity capacitors; more importantly, for both high voltage constant and high stored energy density, the (Pb, Bi) (Ni, Zr, Ti)O3 solid solution ferroelectric film can be used as the key material for collecting and storing piezoelectric energy.

Description

Technical field [0001] The invention belongs to the field of electronic functional materials and devices, and in particular relates to a (Pb, Bi) (Ni, Zr, Ti) O with both high voltage electric constant and high energy storage density 3 Solid solution ferroelectric thin film and preparation method thereof. Background technique [0002] Piezoelectric materials are widely used in communications, household appliances, aviation, detection, computers and many other fields, such as piezoelectric energy harvesting, piezoelectric transducers, surface acoustic wave devices, pressure sensors, drivers and other devices. Piezoelectric ceramics account for as much as 1 / 3 of the entire functional ceramics world, and have become important functional materials in national defense and civil industries and daily life. Especially with the rapid development of microelectronics technology, micro power supplies based on piezoelectric effect power generation have very broad application prospects in the ...

Claims

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Application Information

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IPC IPC(8): C04B35/493C04B35/622
Inventor 岳振星谢镇坤张杰彭斌张效华
Owner TSINGHUA UNIV