Preparation process of single-arm structure of thermoelectric semiconductor temperature sensor chip

Abstract

The invention relates to a single arm structure for a thermoelectric semiconductor temperature sensing sheet and a preparation process, and aims to solve the technical problem of thermal cracks caused by large thermal stress in a like product. The single arm structure for the thermoelectric semiconductor temperature sensing sheet comprises a thermoelectric semiconductor and Cu guide vanes positioned at the two ends of the thermoelectric semiconductor, wherein three transition layers, i.e. an Ni-coated layer, an Ni-plated layer and an Sn95Ag5-plated layer, are arranged between each of the two ends of the thermoelectric semiconductor and the corresponding Cu guide vane; the Ni-coated layers, the Ni-plated layers and the Sn95Ag5-plated layers are sequentially arranged from the end parts of the thermoelectric semiconductor to the surfaces of the Cu guide vanes. According to the single arm structure and the preparation process, the transition layers are arranged, so that a buffering function is realized, and the thermal stress which is generated between the thermoelectric conductor and the Cu guide vanes caused by the great thermal expansion coefficient difference is reduced; the single arm structure is high in thermal stability and suitable for various thermoelectric semiconductor temperature sensing sheets, the problem of thermal cracks in a thermoelectric semiconductor temperature sensor is solved, and the service life of the temperature sensor is prolonged.

Description

technical field [0001] The invention relates to a temperature sensing sheet, in particular to a preparation process of a single-arm structure of a thermoelectric semiconductor temperature sensing sheet. Background technique [0002] A temperature sensor is a conversion device that can directly convert temperature parameters into electrical parameters. Common temperature sensors include thermal resistors, thermocouples, and semiconductor thermal devices. The working principle of temperature sensors made of thermoelectric semiconductor materials is different from that of semiconductor thermal devices. Temperature sensors made of thermoelectric semiconductor materials have the advantages of high sensitivity, fast response time, long life, safety and reliability, etc., so they have broader application prospects in civilian fields. [0003] However, the performance of the temperature sensing chip made of thermoelectric semiconductor material has a great relationship with its de...

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Problems solved by technology

[0004] In order to overcome the above-mentioned deficiencies, the purpose of the present invention is to provide the art with a single-arm structure preparation process for thermoelectric semiconductor temperature sensing chips, so as to solve the problem of thermal cracking in existing similar products due to relatively large internal thermal stress. question

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