High pressure-resistance leadless high-temperature ferroelectric ceramic and preparation method thereof

A technology of ferroelectric ceramics and high withstand voltage, which is applied in the field of ferroelectric ceramic materials to achieve the effects of excellent withstand voltage performance, simple preparation process, and reduced dielectric loss

Inactive Publication Date: 2014-04-09
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003]There is no (1-x) BF-xBT system ceramic pressure resistance and Report on Preparation Technology by Flash Burning Method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] The composition is: 0.78BiFeO 3 -0.22BaTiO 3 +[5%Bi 2 o 3 +1%MnO 2 +0.5%ZnO+1%Nb 2 o 5 ]

[0012] The preparation method is:

[0013] To analyze pure Bi 2 o 3 , Fe 2 o 3 、BaCO 3 As raw material, according to the chemical formula 0.78BiFeO 3 -0.22BaTiO 3 The batching is carried out, and the ball mill is wet-milled with absolute ethanol for 24 hours, and the ceramic material is pre-synthesized at 780 °C for 2 hours after drying.

[0014] Synthetic porcelain and Bi 2 o 3 , Nb 2 o 5 , MnO 2 and ZnO according to the chemical formula 0.78BiFeO 3 -0.22BaTiO 3 +[5%Bi 2 o 3 +1%MnO 2 +0.5%ZnO+1%Nb 2 o 5 ] Ingredients, secondary wet grinding with absolute ethanol as the medium for 24 hours, after drying, heat at 800 ℃ for 2 hours to form a solid solution, then grind in a mortar for 1 hour, then add 5% PVA solution as a binder, and press Become biscuit, the biscuit after molding discharges PVA at 700 ℃ of insulations for 2 hours, directly puts into the sin...

Embodiment 2

[0018] The composition is: 0.80BiFeO 3 -0.20BaTiO 3 +[5%Bi 2 o 3 +1%MnO 2 +0.5%ZnO+1%Nb 2 o 5 ]

[0019] The preparation method is the same as in Example 1, except that the sintering temperature is 950° C., and the holding time is 10 minutes.

Embodiment 3

[0021] The composition is: 0.85BiFeO 3 -0.15BaTiO 3 +[5%Bi 2 o 3 +1%MnO 2 +0.5%ZnO+1%Nb 2 o 5 ]

[0022] The preparation method is the same as in Example 1, except that the sintering temperature is 900° C., and the holding time is 2 minutes.

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PUM

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Abstract

The invention discloses high pressure-resistance leadless high-temperature ferroelectric ceramic and a preparation method thereof. The composition general formula of the high pressure-resistance leadless high-temperature ferroelectric ceramic is (1-x)BiFeO3-xBaTiO3+[5%Bi2O3+1%MnO2+0.5%ZnO+1%Nb2O5], wherein x is a mole fraction and is more than 0 and less than 0.5. The leadless piezoelectric ceramic provided by the invention is prepared by a two-step synthesizing process, a flash sintering process and a rapid cooling process, so that short sintering time, simple process, high pressure resistance and low dielectric loss can be realized.

Description

technical field [0001] The invention relates to a ferroelectric ceramic material, in particular to a high-voltage-resistant lead-free high-temperature ferroelectric ceramic and a preparation method thereof. Background technique [0002] High-temperature ferroelectric materials are widely used in vibration and shock measurements in atomic energy, aerospace, automobile, metallurgy and petrochemical industries. In recent years, with the rapid development of atomic energy, aerospace, automobile, metallurgy and petrochemical industries, ferroelectric sensors are required to work at higher temperatures, and the demand for high-temperature ferroelectric materials and devices is becoming more and more urgent. For example, the pre-ignition detonation iron voltage sensor for monitoring the automobile engine and the vibration sensor for the aerospace engine system are required to be as close to the engine as possible, which can effectively reduce the emission of pollutants in the exha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B35/468
Inventor 周昌荣周秀娟杨涛杨华斌周沁陈国华袁昌来马家峰杨云
Owner GUILIN UNIV OF ELECTRONIC TECH
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