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Preparation method of annular-structure thermo-electric device

A thermoelectric device and ring-shaped technology, which is applied in the field of preparation of ring-shaped thermoelectric devices, can solve the problems of no relevant reports, few researches on thermoelectric devices, complicated preparation process, etc., and achieve the goal of preventing heat loss, ensuring mechanical strength and high mechanical strength Effect

Active Publication Date: 2014-04-23
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010]However, so far, the research on thermoelectric devices with ring structure is still very little in the world, and it is still in its infancy
So far, only Bi2Te3 ring-shaped thermoelectric modules connected by Gao et al. using Cu as electrodes have been disclosed (M. Gao and D.M. Module" (Ring-structured thermoelectric module), Semicond. Sci. Technol. (2007) 22: pages 880–883), its preparation process is relatively complicated
As for the preparation of thermoelectric devices with filled skutterudite-based annular structures, there is no relevant report at present.

Method used

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preparation example Construction

[0042] see Figure 2 to Figure 6 The embodiment, the preparation method of the ring-shaped thermoelectric device of the present invention includes: placing the first metal connection layer 4 on the groove 12 arranged longitudinally on the inner wall 11 of the hollow mould; inserting the central rod 3 into the mould. ; The first thermoelectric material 5, the isolation layer material 6 and the second thermoelectric material 7 are sequentially laid in the annular hollow part between the center rod 3 and the shell 1 of the mold; the mold is sintered; the center rod is removed after the sintering is completed 3 and remove the isolation layer material 6 between the first thermoelectric material 5 and the second thermoelectric material 7 to obtain an annular thermoelectric single couple 9; and the inner walls 90 of multiple annular thermoelectric single couples 9 are connected by a second metal connection layer 8 To obtain a ring-shaped thermoelectric device.

[0043] According to ...

Embodiment 1

[0067] First choose the general formula Mo x Cu 1-x The molybdenum-copper alloy material is used as the first metal connection layer 4, wherein x (weight%) is 20≤ x ≤80. Preferably, in this embodiment, the Mo formed by cold rolling is selected. 40 Cu 60 The alloy sheet is used as the first metal connection layer 4, and its thickness may be 0.5 mm.

[0068] The first metal connection layer 4 is pretreated. Sand blasting can be performed on one side of the first metal connection layer 4 to remove oxides on the surface and make the surface rough to enhance the bonding force between it and the barrier layer. In the blasting treatment, the blasting pressure can be 0.1-0.5 MPa, the blasting time can be 30 seconds-3 minutes, and high-purity corundum can be used for the blasting treatment, for example.

[0069] After the sandblasting treatment is completed, the first metal connection layer 4 may be ultrasonically cleaned to remove surface impurities. The solvent used for the u...

Embodiment 2

[0079] Compared with Example 1, the main difference of Example 2 is the preparation process of the first metal connection layer 4, the first enhanced bonding layer, and the barrier layer (such as image 3 shown). Therefore, descriptions of those steps that are the same as in Embodiment 1 are omitted in the following description.

[0080] Present embodiment 2 is still the same as in embodiment 1, selects the Mo of cold-rolled forming for use 40 Cu 60 The alloy sheet is used as the first metal connection layer 4, and its thickness may be 0.3 mm.

[0081] On top of this first metal connection layer 4 a solder layer is placed. The solder layer can be selected from Ag-Cu alloy solder pads. Preferably, the content of Cu can be 50%, the rest is Ag and a small amount of unavoidable impurity elements Bi or Zn; the thickness of the Ag-Cu alloy solder sheet used can be 0.1mm.

[0082] On the upper surface of this solder layer, a barrier layer to which a first bond-enhancing layer ha...

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Abstract

The invention relates to a preparation method of an annular-structure thermoelectric device. The preparation method comprises the following steps of placing a first metal connecting layer at a groove vertically arranged on an inner wall of a hollow mould; inserting a central rod in the mould; sequentially paving a first thermoelectric material, an isolating layer material and a second thermoelectric material in an annular hollow part between the central rod and a shell of the mould; sintering the mould; removing the central rod after sintering, and removing the isolating layer material between the first thermoelectric material and the second thermoelectric material so as to obtain annular thermoelectricity unicouples; connecting inner walls of the annular thermoelectric unicouples through second metal connecting layers so as to obtain the annular-structure thermoelectric device. Due to the adoption of the method, the annular-structure thermoelectric device can be high-efficiently prepared.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric conversion, and in particular relates to a method for preparing a ring-shaped thermoelectric device. Background technique [0002] As a new energy and renewable clean energy technology, thermoelectric conversion technology has attracted extensive attention in the world in recent years. Thermoelectric conversion technology uses the Seebeck effect of semiconductor materials to directly convert thermal energy and electrical energy. It has the characteristics of long life, high reliability, environmental friendliness, wide operating temperature range, and effective use of low-density energy. High-tech fields such as waste heat and waste heat recovery from automobile exhaust, high-precision temperature control devices, and military power supplies have significant advantages. [0003] Among many thermoelectric materials, filled skutterudite, as a new type of high-performance medium-temperature (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H10N10/01
Inventor 仇鹏飞黄向阳陈立东顾明史迅夏绪贵唐云山王超
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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