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Pressure difference control system of MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit

A control system and gas circuit technology, applied in gaseous chemical plating, metal material coating process, coating, etc.

Inactive Publication Date: 2014-04-30
南昌硅基半导体科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this MOCVD equipment, a needle valve needs to be installed at the back end of the bypass, and the needle valve will be blocked after a long time of use, causing inconvenience and maintenance is very troublesome. Road control system is very necessary

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  • Pressure difference control system of MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit

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specific Embodiment approach

[0020] The present invention will be further described below in conjunction with the embodiments and with reference to the accompanying drawings.

[0021] A MOCVD gas path pressure difference control system for growing gallium nitride (GaN), including: main carrier gas pipeline 1, main gas path pipeline 4 and bypass pipeline 9, main carrier gas pipeline 1 leads to H 2 or N 2 or H 2 , N 2 Mixed carrier gas, there are five kinds of organic sources for the reaction gas that can be introduced into the main gas pipeline 4: trimethylgallium (TMGa), triethylgallium (TEGa), trimethylaluminum (TMAl), trimethyl Indium (TMIn), p-type dopant magnesocene (CP 2 Mg) and n-type dopant silane: SiH 4 . The front ends of the main carrier gas pipeline 1, the main gas pipeline 4 and the bypass pipeline 9 are all equipped with a mass flow meter (MFC) 2, and the ends of the main gas carrier pipeline 1 and the main gas pipeline 4 are equipped with a normally closed valve 11, A pressure sensor (...

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Abstract

The invention discloses a pressure difference control system of an MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit. The system comprises a main gas carrying pipeline, a main gas circuit pipeline and a bypass pipeline and is characterized in that a main gas circuit pipeline quality flow controller and a pressure sensor are sequentially installed at the front end of the main gas circuit pipeline, a pressure controller is installed at the rearmost end of the bypass pipeline, six four-way switching valves are installed on the main gas circuit pipeline, six three-way switching valves are installed on the bypass pipeline, and each four-way switching valve is connected with the corresponding three-way switching valve through a corresponding branch pipe. Therefore, after a reaction gas enters into the main gas circuit pipeline, the gathered pressure of the bypass pipeline changes along with the pressure of the main gas circuit pipeline at any time under the joint effect of the pressure sensor, a PLC (Programmable Logic Controller) and the pressure controller, and a pressure difference following relationship always exists between the bypass pipeline and the main gas circuit pipeline. Thus, the reaction gas can be smoothly switched into the main gas circuit pipeline and conveyed to a reaction chamber while the non-reaction gas is switched into the bypass pipeline for preparation, so that gas between the main gas circuit and the bypass is precisely controlled to quickly and stably switch.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth equipment, in particular to an MOCVD gas path pressure difference control system. Background technique [0002] Metal-organic chemical vapor deposition system (MOCVD) is the main equipment for growing semiconductor materials. It is mainly used to grow III-V compounds such as gallium nitride (GaN), gallium arsenide (GaAs) and other semiconductor materials. MOCVD equipment can also be used It is used to grow low-dimensional structure materials such as semiconductor heterojunctions, superlattices, and quantum wells, and is widely used in the fields of semiconductor optoelectronics and microelectronics. [0003] The raw materials used for MOCVD growth mainly include metal-organic compounds (MO) and hydrides. The MO source is mainly stored in a stainless steel source bottle in solid or liquid form. It is necessary to transport the MO source steam to the in the reaction chamber. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52
Inventor 蒲勇徐龙权丁杰
Owner 南昌硅基半导体科技有限公司
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