Carbon nano-tube array with uniform tube diameter and growing method thereof

A carbon nanotube array and tube diameter technology, applied in the field of nanomaterials, can solve problems such as uneven distribution of tube diameters, and achieve the effects of reducing the possibility, the method is simple and easy, and the shape is improved

Active Publication Date: 2014-05-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims to provide a carbon nanotube array with a uniform diameter in order to solve the technical problem of uneven distribution of the diameter of the carbon nanotube array in the prior art.

Method used

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  • Carbon nano-tube array with uniform tube diameter and growing method thereof
  • Carbon nano-tube array with uniform tube diameter and growing method thereof
  • Carbon nano-tube array with uniform tube diameter and growing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] An alumina buffer layer with a thickness of 20 nm and an Fe catalyst layer with a thickness of 8 nm were sequentially deposited on a 20 μm tantalum foil by vacuum electron beam evaporation. The composite substrate was put into a CVD tube furnace, and the temperature was raised to 650° C. at a rate of 10° C. / min in an argon atmosphere; then hydrogen gas was introduced, and the catalyst was reduced for 10 minutes at a pressure of 5 kPa. Then the temperature was raised to 700° C., and a mixed gas composed of argon, hydrogen, and acetylene was introduced, with flow rates of 140 sccm, 60 sccm, and 10 sccm respectively, and a total pressure of 30 kPa, and grown for 40 minutes. Finally, the heating was turned off, and the temperature was lowered to 550° C. at a rate of 10° C. / min under a low pressure of 7 kPa in an argon atmosphere, and then naturally cooled to room temperature.

[0035] figure 1 It is a scanning electron microscope photo taken at an angle of 45° on the sampl...

Embodiment 2

[0037] The growth process is the same as that in Example 1, except that the catalyst reduction treatment is carried out at a low pressure of 10 kPa.

[0038] Such as Figure 5As shown, the height of the obtained carbon nanotube array is 221nm, closely arranged along the vertical direction of the substrate, and there is no amorphous carbon particle. Raman spectrum showed I(D) / I(G)=0.96. Such as Figure 6 It can be seen that the diameters of carbon nanotubes are distributed between 10 and 15 nm, and the standard deviation of the diameters is 1.39 nm, which is relatively uniform. Transmission electron micrographs show that there are obvious cavities, and the tube wall is composed of 5-8 carbon layers.

Embodiment 3

[0040] The growth process is the same as that in Example 1, except that the catalyst reduction treatment is carried out at a low pressure of 20 kPa.

[0041] The height of the obtained carbon nanotube array is 160 μm, and the carbon nanotube array is closely arranged along the vertical direction of the substrate, and there is no amorphous carbon particle. Raman spectrum analysis shows: I(D) / I(G)=0.98. The diameter of the carbon nanotube is 10-15nm, the standard deviation of the tube diameter is 2.67nm, and the tube wall is composed of 5-10 carbon layers.

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Abstract

The invention discloses a method for growing a carbon nano-tube array with uniform tube diameter. The method mainly comprises the following steps: (A) depositing a buffer layer and a catalyst layer on a foil to form a composite substrate; (B) introducing a reducing gas, and reducing the catalyst on the composite substrate at a low pressure of 3-20kPa; and (C) introducing a gas mixture consisting of an inert gas, a reducing gas and a carbon-source gas, and in-situ growing the carbon nano-tube array on the composite substrate by adopting a chemical vapor phase deposition method at a low pressure of 15-40kPa. In the method, reduction of the catalyst and growth of the carbon nano-tube array are respectively controlled at the low pressure of 3-20kPa and the low pressure of 15-40kPa, so that the process safety can be improved, the grain diameter and appearance of catalyst grains and array growth can be effectively controlled, and the carbon nano-tube array with high quality and uniform tube diameter can be obtained. The height of the carbon nano-tube array is 100-350mu m, the tube diameter is distributed uniformly and between 8 and 20nm, and the standard deviation is less than 3nm.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a carbon nanotube array with uniform tube diameter and a growth method thereof. Background technique [0002] Carbon nanotubes are one-dimensional tubular structures formed by curling graphene around a central axis. This unique structure endows carbon nanotubes with special physical and chemical properties such as extremely high specific surface area, excellent mechanical properties, outstanding axial thermal conductivity and electrical conductivity, etc. Therefore, carbon nanotubes are widely used in batteries, composite materials, gas sensors and other fields. The carbon nanotube array is a collection of carbon nanotubes arranged in the same direction, which not only retains the excellent axial thermal conductivity and electrical conductivity of carbon nanotubes, but also realizes the orderly integration of carbon nanotubes, which is convenient for larg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82Y30/00B82Y40/00C01B32/162
Inventor 董绍明甄琦阚艳敏胡建宝高乐
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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