Nucleating method for growth of diamond film

Abstract

A nucleating method for growth of a diamond film comprises the following steps of firstly, providing a substrate upon which the diamond film is to be nucleated; then dissolving a diamondoid in an adhesive solvent to form a mixing solution; immersing the substrate into the mixing solution to let the diamondoid attach to the substrate through an adhesive solvent to be used as a nucleating source for subsequent growth of the diamond.

Description

technical field [0001] The present invention relates to a nucleation method in the growth process of diamond film, in particular to a method for growing diamond film combining cobaltane with adhesive solvent. Background technique [0002] Diamond has many superior properties, such as wide energy gap, chemical inertness, high carrier mobility, excellent biocompatibility, high sound wave propagation velocity, good light transmission, high thermal conductivity, and maximum hardness, making diamond Become a candidate with a wide range of applications, such as microelectronics, optics, grinding, thermal management, biomedicine, DNA sensors, manufacturing engineering, etc. [0003] Recently, nucleation was found to be a key step in growing diamond thin films. Therefore, there are many methods to study the synthesis of diamond films and increase the nucleation density, such as scratch method, ion beam assisted deposition method, and bias assisted nucleation method. [0004] Howev...

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Problems solved by technology

[0004] However, the scratching method can severely damage the surface of the substrate, making the grown diamond film unusable for electronic components

[0005] In addition, the ion beam assisted deposition method will lead to the generation of amorphous carbon accompanied by nano-diamond particles, and it is also possible to form diamond crystals in the amorphous carbide layer, which may cause unfavorable crystallization directions between the diamond and the substrate, so Unable to provide good diamond film with good orientation for electronic components

[0006] As for the bias-assisted nucleation method, although the degree of damage to the substrate surface is less than that of the scratch method, it is not suitable for the requirements of highly rough surfaces

Before bias-assisted nucleation, the step of carbonization is still required, so it will increase the time for synthesizing diamonds. Another disadvantage of the bias-assisted nucleation method is that the substrate must be conductive, otherwise the bias-assisted nucleation will not be possible.

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