Unlock instant, AI-driven research and patent intelligence for your innovation.

Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor

An epitaxial growth and semiconductor technology, applied in crystal growth, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as GaN decomposition defects, substrate bombardment, and affecting the crystallization characteristics of compound semiconductors, so as to achieve good film quality, The effect of low growth temperature

Active Publication Date: 2014-05-21
TSINGHUA UNIV
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] After the plasma is generated by the reactant gas, positive ions, metastable atoms and molecules, and neutral atoms can be used to generate compound semiconductors, but the positive ions and high-energy neutral particles will bombard the substrate, thereby affecting the compound semiconductor. Crystalline properties
Taking GaN grown by PEMOVPE as an example, the reaction gas is Ga(CH 3 ) 3 and N 2 , the nitrogen plasma contains nitrogen ions, nitrogen atoms, and nitrogen molecules, which can all participate in the formation of GaN in principle, but nitrogen ions and high-energy neutral particles (such as nitrogen atoms, nitrogen molecules) will cause bombardment to the substrate and Ga desorption , GaN decomposition and point defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor
  • Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor
  • Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Reference figure 1 To illustrate, the substrate is fixed on the sample stage 20, and then the vacuum pump system 10a is used to exhaust the gas inside the vacuum reaction chamber 10 so that the background vacuum is less than or equal to 10 -4 mTorr. The substrate is heated by the sample stage 20 and maintained at a temperature of 500°C. Then, input N to the first air inlet 40a 2 , Input TMGa to the second air inlet 50a, while maintaining the pressure in the chamber at 3 Torr through the vacuum pump system 10a. Finally, the ICP excitation unit 30 is turned on to generate nitrogen plasma and start the epitaxial growth of GaN.

Embodiment 2

[0065] Reference figure 1 To illustrate, the substrate is fixed on the sample stage 20, and then the vacuum pump system 10a is used to exhaust the gas inside the vacuum reaction chamber 10 so that the background vacuum is less than or equal to 10 -4 mTorr. The substrate is heated by the sample stage 20 and maintained at a temperature of 500°C. Alternately perform the following two steps to start the epitaxial growth of GaN: (a) Input N with a flow rate of 50 sccm into the first inlet 40a 2 , Input TMGa to the second gas inlet 50a, and maintain the pressure in the chamber at 0.1 Torr through the vacuum pump system 10a. Lasts 1min. (B) Close the second air inlet 50a, and at the same time change the input flow rate of the first air inlet 40a to 50 sccm, and maintain the pressure in the chamber at 3 Torr through the vacuum pump system 10a. The ICP excitation unit 30 is turned on to generate nitrogen plasma. Lasts 1min.

Embodiment 3

[0067] Reference figure 2 To explain, the substrate is fixed on the sample stage 20. Next, the vacuum pump system 10a is used to exhaust the gas inside the vacuum reaction chamber 10 so that the background vacuum is less than or equal to 10 -3 Pa. Rely on the sample stage 20 to heat the substrate to 530°C and keep it for 20 minutes to fully outgas. Then lower the substrate temperature to 500°C, and input N from the first air inlet 40a 2 , The gas flow is 100~1000sccm; the carrier gas H is introduced from the second gas inlet 50a 2 Diluted Ga(CH 3 ) 3 , N 2 And Ga(CH 3 ) 3 The flow ratio is 100:1-10:1, and the pressure in the chamber is maintained at 1-100Pa through the vacuum pump system 10a. Turn on the ICP excitation unit 30 to generate nitrogen plasma. At the same time, a positive voltage of 10-100V is applied to the space isolation device 70 to absorb nitrogen ions and high-energy nitrogen neutral particles, so that low-energy nitrogen neutral particles and Ga(CH 3 ) 3 It ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an epitaxial growth device and method for an ICP (inductively coupled plasma) based compound semiconductor. The device comprises a vacuum reaction chamber, a sample table, an ICP excitation unit, a first gas path and a second gas path, wherein the sample table is arranged at the bottom of the vacuum reaction chamber; the ICP excitation unit is located at the top of the vacuum reaction chamber; the first gas path is provided with a first gas inlet, and used for feeding a first gaseous reaction source into the vacuum reaction chamber; the second gas path is provided with a second gas inlet, and used for feeding a second gaseous reaction source into the vacuum reaction chamber; the ICP excitation unit is used for exciting the first gaseous reaction source and the second gaseous reaction source to carry out ionized decomposition, and the sample table can be heated so as to carry out thermal cracking on the first gaseous reaction source and the second gaseous reaction source, so that epitaxial growth is implemented. The epitaxial growth device and method disclosed by the invention have the advantages of low growth temperature and good film quality.

Description

Technical field [0001] The invention belongs to the technical field of thin film growth equipment, and in particular relates to an inductively coupled plasma (Inductively Coupled Plasma, ICP) compound semiconductor low-temperature epitaxial growth device and method. Background technique [0002] New compound semiconductor materials represented by GaN and SiC have received international attention in the past ten years. They are important in ultraviolet / blue / green light-emitting diodes, lasers, detectors, and high-frequency, high-temperature and high-power electronic devices. Wide range of applications. [0003] In order to obtain good device performance, the compound semiconductor film is required to be in a single crystal state as much as possible. The current epitaxial growth methods of compound semiconductors mainly include molecular beam epitaxy (MBE) and metal organic chemical vapor phase epitaxy (MOVPE). Because MBE has the disadvantages of demanding vacuum conditions and sl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B25/08C30B25/02H01L21/205
Inventor 罗毅王健郝智彪汪莱
Owner TSINGHUA UNIV