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Adjustable constant current source integrated chip and manufacturing method

An integrated chip, constant current source technology, applied in semiconductor/solid-state device manufacturing, adjusting electrical variables, control/regulating systems, etc. The effect of improving the voltage working range, good constant current characteristics and simplifying the process

Active Publication Date: 2014-05-21
江苏新顺微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The three schemes have different advantages and disadvantages. The constant current source of the transistor is adjustable, but the dynamic resistance is relatively small, and the constant current performance is poor; the constant current performance of the field effect constant current tube is better, but the chip area utilization rate is low. (the ratio of constant current current to chip area), the constant current cannot be adjusted, and the chip yield rate is low (higher requirements are placed on the manufacturing process level); although the performance of the integrated op amp constant current source is good, the manufacturing process is complicated and the cost High, and the transistor constant current source and the integrated operational amplifier constant current source are usually circuits composed of independent components, and the reliability is relatively low

Method used

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  • Adjustable constant current source integrated chip and manufacturing method
  • Adjustable constant current source integrated chip and manufacturing method
  • Adjustable constant current source integrated chip and manufacturing method

Examples

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Embodiment 1

[0054] see figure 1 , the present invention relates to an adjustable constant current source integrated chip, which includes as N - Single crystal silicon N in doped region 1 - type polishing sheet; in the N - The back side of the doped region 1 is provided with N + heavily doped region 2; in the N - The front side of the doped region 1 is provided with the first P of the transistor Q2 - Doped region 3 and the second P of the constant current diode CRD - doped region 4; in the first P - The doped region 3 is doped to form a first N-doped region 5, and in the second P - The second N-doped region 6 is formed by doping on the doped region 4; the first P-doped region 7 is formed on the first N-doped region 5, and the first P - A second P-doped region 8 is formed on the doped region 3, and in the second P - A third P-doped region 9 and a fourth P-doped region 10 are formed on the doped region 4, and the N - The fifth P-doped region 11 of the transistor Q1 and the sixth...

Embodiment 2

[0064] Embodiment two, such as Figure 10 As shown, the difference between this embodiment and Embodiment 1 is that the doping types N and P type in the doped region are interchanged, that is, N type becomes P type, P type becomes N type, and the structure is still the same, and finally The functions realized are the same, except that the polarity of the corresponding electrodes is reversed, that is, the front side of the silicon substrate is the anode, and the back side is the cathode. Corresponding to the manufacturing method, only the type of doping impurity is exchanged with that of Embodiment 1, and the process requirements are the same.

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Abstract

The invention relates to an adjustable constant current source integrated chip and a manufacturing method. The adjustable constant current source integrated chip comprises a monocrystalline silicon N-type polished wafer which serves as an N-doped region, an N+ heavily doped region is arranged on the back of the N-doped region, a triode Q2, a current regulative diode (CRD), a triode Q1 and a resistor R are arranged on the front of the N-doped region, one end of an N+ doped region of the resistor R is connected with an N+ doped region of the triode Q2, meanwhile, the N+ doped region of the resistor R serves as the cathode of the constant current source integrated chip, the other end of the N+ doped region of the resistor R is respectively connected with an N+ doped region of the triode Q1 and a P doped region of the triode Q2, a P doped region of the triode Q1 is respectively connected with a P doped region of the CRD, the P doped region of the triode Q2 and an N doped region of the triode Q2, an N doped region of the CRD is respectively connected with the P doped region and a second N+ doped region of the CRD, and the N+ heavily doped region serves as the anode of the constant current source integrated chip.

Description

technical field [0001] The invention relates to an integrated chip, in particular to an adjustable constant current source integrated chip and a manufacturing method thereof. It belongs to the technical field of integrated chips. Background technique [0002] The constant current source is a power supply that can provide a constant current to the load. It is widely used in electronic circuits, especially the rise of LED lighting in recent years. Its constant current drive scheme has promoted the development of low-cost, high-reliability constant current source devices. . At present, according to the main components of the constant current source circuit, it can be divided into three categories: transistor constant current source (see Figure 14 ), JFET constant current source (see Figure 15 ), integrated operational amplifier constant current source. The three schemes have different advantages and disadvantages. The constant current source of the transistor is adjustable...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L21/8222G05F1/56
Inventor 陈晓伦叶新民李建立冯东明王新潮
Owner 江苏新顺微电子股份有限公司
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