Dual-way growth type carbon nano tube array sensor and preparation method of dual-way growth type carbon nano tube array sensor

A carbon nanotube array and carbon nanotube technology, applied in the direction of material resistance, etc., can solve the problem of gas cannot be adsorbed, and achieve the effect of improved repeatability and excellent electrical contact performance

Active Publication Date: 2014-06-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned problem that gas cannot be adsorbed on the surface of most carbon nanotubes in the existing carbon nanotube sensor, the present invention provides an array type carbon nanotube sensor with a new electrode structure, which forms a three-dimensional gas adsorption structure inside to have sufficient adsorption area, thereby greatly improving the sensitivity of carbon nanotube gas sensors

Method used

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  • Dual-way growth type carbon nano tube array sensor and preparation method of dual-way growth type carbon nano tube array sensor
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  • Dual-way growth type carbon nano tube array sensor and preparation method of dual-way growth type carbon nano tube array sensor

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Embodiment approach 1

[0047] Embodiment 1: The scheme of the novel array type carbon nanotube sensor of the present invention is as Figure 5 As shown, the preparation steps are as follows:

[0048] ① Use a silicon wafer or other materials as the substrate 5. If the substrate 5 is a conductive material, prepare an insulating layer 6 on the substrate 5 by oxidation or any coating method, and use acetone, ethanol and deionized water to clean it. Remove surface dirt to obtain a clean substrate 5 and insulating layer 6;

[0049] ② Using photolithography technology to prepare photolithographic patterns according to the design requirements on a clean substrate,

[0050] ③ Vacuum coating, sputtering coating or other coating methods are used on the photolithographic substrate, and the buffer layer metal 7 and the bottom electrode layer 3 are sequentially plated on the photolithographic substrate;

[0051] ④ Coating an insulating layer 11 on the previously treated buffer layer metal 7 by sputtering or oth...

Embodiment approach 2

[0057] Embodiment 2: The carbon nanotube sensor of the present invention can also be prepared into a sensor array structure. like Image 6 shown. Multiple groups of carbon nanotube array structures are used, so that each group is modified with different sensitive materials, which can meet the requirements of simultaneous measurement of different types of gases. The preparation process is similar to Embodiment 1:

[0058] ① Use a silicon wafer or other materials as the substrate 5. If the substrate 5 is a conductive material, prepare an insulating layer 6 on the substrate 5 by oxidation or any coating method, and use acetone, ethanol and deionized water to clean it. Remove surface dirt to obtain a clean substrate 5 and insulating layer 6;

[0059] ② Using photolithography technology, the array sensor structure is prepared on a clean substrate.

[0060] ③ Vacuum coating, sputtering coating or other coating methods are used on the photoetched substrate, and the buffer layer met...

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Abstract

The invention discloses a dual-way growth type carbon nano tube array sensor and a preparation method of the dual-way growth type carbon nano tube array sensor. The dual-way growth type carbon nano tube array sensor comprises a bottom electrode, carbon nano tubes and a top electrode and is of a three-dimensional structure, wherein the carbon nano tubes are perpendicular to the growth of the bottom electrode, and one ends of the carbon nano tubes are connected in the bottom electrode; the carbon nano tubes are perpendicular to the top electrode in the growing process, and the other ends of the carbon nano tubes are electrically contacted with the top electrode. The dual-way growth type carbon nano tube array sensor and the preparation method of the dual-way growth type carbon nano tube array sensor have the advantages that the gas-sensitivity is good, an electrical contacting property is good, the stability and the preparative repeatability are high, and an integrated form array sensor for multiple gases is easy to realize.

Description

technical field [0001] The invention relates to a device and a preparation method of a carbon nanotube gas sensor, in particular to a bidirectional growth type carbon nanotube array sensor and a preparation method thereof. Background technique [0002] As a key link in automatic detection and automatic control, sensors are widely used in many fields in the economy and society. With the improvement of living standards and environmental protection awareness, there is a higher demand for the monitoring of industrial waste gas and atmosphere, as well as the detection of food and living environment quality, and the role of sensors is becoming more and more important. Traditional metal-oxide-semiconductor gas sensors cannot work at room temperature, consume a lot of energy with high power, are usually large in size, not high in portability, and inconvenient to use. In contrast, carbon nanotube sensors use a new type of one-dimensional material - carbon nanotubes, which have a str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 陈泽祥张继君李海
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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