Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device includes the following steps that: semiconductor fins are formed on a semiconductor substrate; interfacial oxide layers are formed on the surfaces of the tops and side walls of the semiconductor fins; high K gate dielectrics are formed on the interfacial oxide layers; first metal gate layers are formed on the high K gate dielectrics; and doping agents are implanted into the first metal gate layers through conformal doping; and annealing is performed, so that the doping agents can be diffused and accumulated at upper interfaces between the high K gate dielectrics and the first metal gate layers and lower interfaces between the high K gate dielectrics and the interfacial oxide layers, and electric dipoles can be generated at the lower interfaces between the high K gate dielectrics and interfacial oxides through interfacial reaction.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a semiconductor device including a metal gate and a high-K gate dielectric and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the feature size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) keeps decreasing. The scaling down of MOSFETs leads to a serious problem of gate current leakage. The use of a high-K gate dielectric makes it possible to increase the physical thickness of the gate dielectric while keeping the equivalent oxide thickness (EOT) constant, thereby reducing the gate tunneling leakage current. However, conventional polysilicon gates are not compatible with high-K gate dielectrics. The use of metal gates and high-K gate dielectrics can not only avoid the depletion effect of polysilicon gates, reduce gate resistance, but also avoid boron penetration and improve device reliability...

AI Technical Summary

Problems solved by technology

Therefore, the method for manufacturing a semiconductor device including a double metal gate and a double gate dielectric is complex and unsuitable for mass production, which further leads to high cost

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