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Airflow control device for decouple reaction ion etching equipment

A gas flow control device and reactive ion etching technology, which is applied in the directions of crystal growth, post-processing details, and post-processing, can solve the problems of reduced service life of the chamber, reduced service life of the chamber, and increased maintenance costs, and achieve environmental maintenance. Consistent, improved stability, and stabilized stress performance effects

Active Publication Date: 2014-06-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

The above defects will reduce the service life of the chamber, thereby reducing the service life of the entire chamber, reducing productivity and increasing maintenance costs

Method used

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  • Airflow control device for decouple reaction ion etching equipment
  • Airflow control device for decouple reaction ion etching equipment
  • Airflow control device for decouple reaction ion etching equipment

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Embodiment Construction

[0029] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0030] In this example, first pass figure 1 , 2 Describe the state of the art. see figure 1 , figure 1 It is a structural schematic diagram of a cavity part of a DRIE device of AMEC in the prior art. As shown in the figure, the upper part of the chamber of the device is divided into left and right chambers 1 and 4 which are independent of each other, and two wafers 2 and 3 are respectively placed in the left and right chambers and separated from each other. The two chambers are completely independent, and are only connected through the common exhaust port 6 arranged in the middle of the bottom 5 of the chamber. A servo pressure valve is provided below the exhaust port to adjust the pressure in the chamber; the exhaust pipe 8 of the exhaust system is connected to the lower part of the valve 7 . The arrows in the figure represen...

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Abstract

The invention discloses an airflow control device for decouple reaction ion etching equipment. The airflow control device for the decouple reaction ion etching equipment is characterized in that a rectifying cover with uniformly densely covered air holes is arranged in an exhaust port shared by the bottoms of two reaction chambers of the equipment in a sealing manner and is used for rectifying gas above a servo pressure valve, so that the uniformity and stability of the gas above the rectifying cover are greatly improved. The airflow control device for the decouple reaction ion etching equipment has the advantages that after the gas is rectified, the pressures of the left chamber and the right chamber are kept consistent, and the uniformity of a product is improved; meanwhile, the phenomenon that polymers asynchronously assemble in the chambers does not occur, so that the environments of the chambers are kept consistent, the stability of a technology is improved, the period of equipment cleaning is prolonged, the production efficiency of the equipment is improved, and the maintenance charge of the equipment is reduced.

Description

technical field [0001] The present invention relates to a decoupling reactive ion etching equipment in the field of semiconductor integrated circuit manufacturing, and more particularly, to a gas flow control device for semiconductor decoupling reactive ion etching equipment to improve cavity pressure and gas uniformity. Background technique [0002] Decoupled reactive ion etching (Decouple Reaction Ion Etching, DRIE) equipment is an important equipment for the preparation of semiconductor micro-nano devices. The equipment whose surface is not masked is etched by the dual effects of physical bombardment and chemical reaction of active ions on the substrate. [0003] Existing DRIE equipment, such as AMEC (China Micro Semiconductor Equipment Co., Ltd.) adopts a dual stage (a variety of equipment has a similar design) design, that is, there are dual reaction chambers in one chamber, which can process 2 wafers at the same time (wafer). Each chamber is equipped with an independ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/12
Inventor 潘无忌
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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