Fuse reading circuit with power-on self-reset

Abstract

The invention relates to a power-on self-resetting fuse wire reading circuit. When the circuit is at a power-on moment, a resetting fuse wire unit is on a logic low level, and the reset low level is latched by utilizing a feedback loop. If the fuse wire is not fused, the reset low level is raised at an output end of the fuse wire and is changed into a logic high level, and the high level is latched through the feedback loop; and if the fuse wire is fused, the output end of the fuse wire is always kept in the logic low level at the resetting moment. The power-on self-resetting fuse wire reading circuit does not consume current during normal operation, is simple in structure and is not provided with a biasing circuit.

Description

technical field [0001] The invention relates to a one-time programmable fuse reading circuit, in particular to a power-on self-resetting fuse reading circuit. It is directly applied to the field of one-time programmable memory cells. Background technique [0002] Through a one-time programmed fuse cell, the stored data can be retained in the event of loss of power, a feature called non-volatility. In today's high-precision analog circuits, in order to compensate for the circuit performance deviation caused by process fluctuations, it is necessary to perform single-chip data configuration on the finished integrated circuit to achieve the best performance. The fuse unit and the antifuse unit solve the storage problem of configuration data very well. [0003] Existing fuse reading techniques such as figure 1 As shown, the conventional fuse reading circuit is to utilize two series-connected metal-oxide-semiconductor M 1 and M 2 The bias is in the linear region, forming a la...

AI Technical Summary

Problems solved by technology

In this case, the reading circuit has no working current, but the designed bias circuit needs to consume current when it is working.

Moreover, the existing conventional fuse reading circuit needs to design an additional bias circuit to provide a bias voltage for the normal operation of the reading circuit.

[0004] There are some improved fuse reading circuit technologies, such as document 1: Chinese patent, 200780003644.4, electrical programmable fuse bit, although the reading circuit is simple, but the reading circuit needs an external input control bit to control the reading, which requires Certain timing requirements require an additional control circuit to control, and there is a certain power consumption during operation

Such as document 2: US Patent, US7031209B2, METHODS AND CIRCUITS FOR TESTING PROGRAMMABLILITY OF ASEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A BREAKDOWNPHENOMENON IN AN ULTRA-THIN DIELECTRIC, which is characterized by accurate judgment of the fuse state, but its comparator and The reference voltage circuit of the comparator will consume additional system power

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