An epitaxial growth method for improving the luminous efficiency of the active region of Gan-based LEDs

Abstract

The invention provides a novel epitaxial growth method for better reducing polarization and defects in the quantum well region growth process and improving electron hole electron injection efficiency so as to greatly improve the light-emitting efficiency of a GaN-based LED. Because a plurality of periods of extremely-thin GaN / InGaN period structures made of same materials are inserted into a growth GaN / InGaN quantum well barrier layer, stress polarization generated by lattice mismatch in the GaN / InGaN quantum well barrier layer growth process can be well avoided, dislocation generated in the quantum well growth process is prevented from expanding to a structure further growing, and the electron and electron hole composition efficiency is improved; furthermore, a barrier layer with the gradient reduced enables the injection effect of an electron hole close to a p doping layer to be improved, the effective composition region of electron holes and electrons is enlarged, and the light-emitting efficiency of the whole LED is further improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric device material preparation and structure design, and relates to a novel method for growing GaN-based LED epitaxy. Background technique [0002] Group III nitrides based on GaN (including AlN, GaN, InN and their alloys) are one of the most important wide bandgap semiconductor material systems, with their unique bandgap range, excellent optical and electrical properties and excellent material The mechanical properties make it have broad application prospects in the fields of optical devices, electronic devices and semiconductor devices under special conditions. As early as the 1970s, researchers conducted a lot of research on GaN-based semiconductor materials. By the 1990s, the research on GaN materials had made great breakthroughs in growth and p-type doping, which made the research on GaN materials Its research has also aroused greater interest and has become a popular research topic in th...

AI Technical Summary

Problems solved by technology

Reduced luminous efficiency

And because GaN substrates are not easy to prepare and are expensive, the existing methods are all grown on sapphire or silicon substrates, which will also cause stress and defects due to lattice adaptation at the beginning of substrate growth, thereby affecting the growth of quantum well materials At the same time, because the existing quantum well structure adopts the barrier and well layer of the same thickness as the periodic structure, it will affect the injection effect of holes and electrons, thus greatly reducing the luminous efficiency of LED

Images