Device process for reducing GaN-based vertical structure LED leakage currents

Abstract

The invention relates to a device process for reducing GaN-based vertical structure LED leakage currents. The device process for reducing the GaN-based vertical structure LED leakage currents comprises the steps that photoetching is carried out on an epitaxial wafer, and a first table face and a second table face of an LED device are formed; a passivation layer is formed on the side wall of the LED device; a p-type reflection ohmic electrode and a p-type bonding electrode are evaporated; a side wall buffer protection structure is manufactured in a groove in the LED device; low-temperature metal bonding is carried out on an electric conducting substrate and the epitaxial wafer; a solid laser is adopted, and small beam spots are superposed to scan and strip the substrate spot by spot; an n-GaN layer after the substrate is stripped is etched and thinned by adopting a dry method, and the part, between the stripping face and the second table face, of the n-GaN layer is removed to eliminate stripping damage; the side wall buffer protection structure is removed. According to the device process for reducing the GaN-based vertical structure LED leakage currents, the defects of damage caused by laser stripping of the striping face and the side wall can be overcome, the damage probability of the side wall of the LED device can be lowered, and newly generated leakage current channels are effectively prevented from being generated.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a device process for avoiding leakage of GaN-based vertical structure LED caused by laser stripping. Background technique [0002] In recent years, as a device solution with great potential for high-power white light LEDs, GaN-based vertical structure LEDs are receiving great attention from the industry, and the development of related device processes has always been the focus of its research and development. Among the many unresolved challenges, a critical one is reducing device leakage. [0003] As we all know, the chemical properties of GaN (gallium nitride) materials are very stable, and it is not easy to react with acid and alkali solutions, so only destructive dry etching can be used to make devices. A large number of studies have shown that there are surface defects in the sidewall of the device formed by dry etching, which is one of the main sources of device leakage; in additi...

AI Technical Summary

Problems solved by technology

[0005] To sum up, if the above-mentioned negative effects are not considered in the process method, it will directly lead to the deterioration of the leakage of the device, making the injection efficiency of the device lower

Images