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Zinc sulfide thin film alternating current electroluminescence device contained with doped quantum dots and manufacturing method thereof

An alternating current and luminescent technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of complex process, high vacuum, and inability to realize wide application, and achieve the effect of improving luminous efficiency, improving excitation efficiency, and simple process

Inactive Publication Date: 2014-06-25
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the zinc sulfide semiconductor layer and the doped quantum dot layer adopt an alternating structure, the process is relatively complicated, and the effective excitation of the doped quantum dots cannot be achieved, so it is difficult to achieve the best luminescent performance of the doped quantum dots
However, the traditional thin-film AC electroluminescent devices with ZnS:Mn as the light-emitting layer are realized by vacuum deposition, which requires high vacuum, high-purity raw materials and other strict requirements, and cannot be widely used.

Method used

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  • Zinc sulfide thin film alternating current electroluminescence device contained with doped quantum dots and manufacturing method thereof
  • Zinc sulfide thin film alternating current electroluminescence device contained with doped quantum dots and manufacturing method thereof
  • Zinc sulfide thin film alternating current electroluminescence device contained with doped quantum dots and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0023] The preparation of this device includes the following steps:

[0024] (1) Preparation of the first insulating layer

[0025] Firstly, ultrasonically clean and dry the ITO conductive glass layer 5 . Plating Ta on ITO electrodes by electron beam thermal evaporation 2 o 5 The insulating layer is the first insulating layer 4 .

[0026] (2) Preparation of zinc sulfide sol-gel

[0027] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) solution and ethylenediamine (En) were stirred evenly in a beaker, and a small amount of hydrochloric acid was added. Thereafter, thioacetamide was added with stirring. Finally, a small amount of hydrochloric acid was added to obtain ZnS sol-gel.

[0028] (3) Preparation of doped semiconductor quantum dots CdS:Mn / ZnS

[0029] CdS:Mn / ZnS was synthesized by Growth-doping method. Firstly, the precursors of Cd, CdO, Oleic acid, and ODE were stirred and degassed for 15 minutes in an Ar gas environment in a three-necked flask, and the precursor of S w...

Embodiment 2

[0039] This embodiment is basically the same as Embodiment 1, except that the glass sheet after film formation is annealed at 150° C. in argon, and the film thickness is controlled at 500 nm.

Embodiment 3

[0041] This embodiment is basically the same as Embodiment 1, except that the glass sheet after film formation is annealed at 200° C. in argon, and the film thickness is controlled at 1000 nm.

[0042] Get the CdS of embodiment 1 gained and CdS:Mn / ZnS semiconductor quantum dot nanometer material carries out absorption and fluorescence spectrum test and obtains figure 1 and figure 2 ,From figure 1 It can be seen that the absorption peak and fluorescence emission peak of CdS are obvious, indicating that the CdS core has been formed and can be used to further synthesize CdS:Mn / ZnS semiconductor quantum dots. figure 2 , it can be seen that the absorption and fluorescence peaks of CdS:Mn / ZnS semiconductor quantum dots are obvious, indicating that CdS:Mn / ZnS semiconductor quantum dots have been formed and can be used to prepare thin films.

[0043] Get the CdS of embodiment 1 gained: Mn / ZnS semiconductor quantum dot nanometer material carries out transmission electron microscope t...

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Abstract

The invention relates to a thin film alternating current electroluminescence device and a manufacturing method of the thin film alternating current electroluminescence device, in particular to a zinc sulfide thin film alternating current electroluminescence device contained with doped quantum dots and a manufacturing method of the zinc sulfide thin film alternating current electroluminescence device. The thin film alternating current electroluminescence device comprises an ITO conductive glass layer (5), a first insulation layer (4), a light emitting layer (3), a second insulation layer (2) and a metal electrode layer (1), wherein the ITO conductive glass layer (5), the first insulation layer (4), the light emitting layer (3), the second insulation layer (2) and the metal electrode layer (1) are sequentially arranged, the light emitting layer (3) is formed by mixing zinc sulfide sol and the doped semiconductor quantum dots, the light emitting layer (3) manufactured by mixing the zinc sulfide sol and the doped semiconductor quantum dots is adopted so that the conductive performance can be improved, and the light emitting efficiency of the doped semiconductor quantum dots can be effectively enhanced. Meanwhile, in the process of manufacturing the thin film electroluminescence device in which the zinc sulfide sol and the doped semiconductor quantum dot mixed thin film is taken as the light emitting layer (3), the control over the thickness of the light emitting layer becomes relatively easy.

Description

technical field [0001] The invention relates to a thin-film alternating current electroluminescent device and a preparation method thereof, in particular to a zinc sulfide thin-film alternating current electroluminescent device containing doped semiconductor quantum dots and a preparation method thereof. Background technique [0002] At present, thin-film AC electroluminescent devices have been applied to high-resolution flat-panel displays. Thin-film AC electroluminescent devices have the advantages of strong breakdown resistance, longer life, low power and high brightness. Compared with liquid crystal display (LCD), thin-film electroluminescent display (TFEL) has the advantages of no backlight, high luminous intensity, and fast response speed; compared with cathode ray display (CRT), it has low energy consumption and luminous It has the advantages of high efficiency and wide viewing angle; compared with plasma display (PDP), it also has the advantages of low cost, safe us...

Claims

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Application Information

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IPC IPC(8): H01L33/26
CPCH01L33/26H01L33/40
Inventor 张家雨于永亚
Owner SOUTHEAST UNIV