GaN-base semiconductor device provided with graphene electrode and preparing method of GaN-base semiconductor device
A graphene electrode, N-type semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of incompatibility between epitaxy and chip equipment and processes, separation or falling off, affecting device performance, etc., to improve light output and heat dissipation. performance, improving industrial feasibility, the effect of electrode pattern optimization
Active Publication Date: 2014-07-02
SHANGHAI UNIV
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Problems solved by technology
Most of the methods currently used are to prepare graphene or graphene oxide first, and then transfer it to GaN epitaxial wafers by a certain method. During the transfer process, it is easy to cause damage to graphene and the introduction of impurities; at the same time, the relationship between graphene and GaN depends on The combination of van der Waals force is prone to separation or shedding in the subsequent process, thus affecting the performance of the device; in addition, it is not compatible with the existing GaN-based device epitaxy and chip equipment and process, and does not have good industrial promotion
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[0021] Preferred embodiments of the present invention are described in detail as follows:
[0022] In this example, see figure 1 and figure 2 , a GaN-based semiconductor device with a graphene electrode, which is sequentially combined by a substrate layer 1, a buffer layer 2, an N-type semiconductor layer 3, an active layer 4, a P-type semiconductor layer 5, a graphene film layer 6, and a metal electrode 7 Formation, the substrate layer 1 is made of sapphire, the N-type semiconductor layer 3 is made of n-type gallium nitride, the P-type semiconductor layer 5 is made of p-type gallium nitride, and the P-type semiconductor layer 5 and the graphene film layer 6 are connected and fixed in an ohmic contact mode Graphene thin film layer 6 is provided with through tunnel, metal electrode 7 is passed through the tunnel of graphene thin film layer 6 and is fixedly connected with P-type semiconductor layer 5, forms the welding pad of graphene thin film layer 6, makes graphene thin fil...
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The invention discloses a GaN-base semiconductor device provided with a graphene electrode. The GaN-base semiconductor device provided with the graphene electrode is formed by combining a substrate, a buffer layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a graphene thin film layer and a metal electrode in a combined mode. The P-type semiconductor layer is a composite material lay containing GaN. A through hole is formed in the graphene thin film layer, the metal electrode is made to penetrate through the graphene thin film layer and fixedly connected with the P-type semiconductor layer, a bonding pad of the graphene thin film layer is formed, the graphene thin film layer is fixedly combined on the P-type semiconductor layer, and therefore a combined electrode is formed. An MO source serves as a precursor of a catalyst and a carbon source, self growth of the low-temperature graphene electrode is achieved under the condition of an existing GaN epitaxy technology and a device, current distribution is further improved through control over a metal pattern, and the light-emitting performance and the heat-dissipating performance of the device are improved.
Description
technical field [0001] The invention relates to a semiconductor device and a preparation process thereof, and also relates to a graphene electrode and a preparation method thereof, which are applied in the technical field of semiconductor device structure and preparation. Background technique [0002] Graphene is a monoatomic layer crystal composed of carbon atoms tightly packed, which has many unique properties, such as high specific surface area, good thermal stability, and excellent thermal conductivity. These excellent properties make graphene have good application prospects in the fields of nanoelectronic devices, gas sensors, supercapacitors and energy storage. In particular, graphene has a very high transmittance in the visible light band, the theoretical transmittance of single-layer graphene can reach 97.7% at 550nm, and good electrical and thermal transport properties, making it potentially an ideal transparent conductive material. Material. [0003] In recent ye...
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IPC IPC(8): H01L29/45H01L21/28
CPCC23C16/26C23C16/44H01L33/36H01L2933/0016
Inventor 杨连乔冯伟胡建正张建华
Owner SHANGHAI UNIV