Gan-based semiconductor device with graphene electrode and preparation method thereof

Abstract

The invention discloses a GaN-base semiconductor device provided with a graphene electrode. The GaN-base semiconductor device provided with the graphene electrode is formed by combining a substrate, a buffer layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a graphene thin film layer and a metal electrode in a combined mode. The P-type semiconductor layer is a composite material lay containing GaN. A through hole is formed in the graphene thin film layer, the metal electrode is made to penetrate through the graphene thin film layer and fixedly connected with the P-type semiconductor layer, a bonding pad of the graphene thin film layer is formed, the graphene thin film layer is fixedly combined on the P-type semiconductor layer, and therefore a combined electrode is formed. An MO source serves as a precursor of a catalyst and a carbon source, self growth of the low-temperature graphene electrode is achieved under the condition of an existing GaN epitaxy technology and a device, current distribution is further improved through control over a metal pattern, and the light-emitting performance and the heat-dissipating performance of the device are improved.

Description

technical field [0001] The invention relates to a semiconductor device and a preparation process thereof, and also relates to a graphene electrode and a preparation method thereof, which are applied in the technical field of semiconductor device structure and preparation. Background technique [0002] Graphene is a monoatomic layer crystal composed of carbon atoms tightly packed, which has many unique properties, such as high specific surface area, good thermal stability, and excellent thermal conductivity. These excellent properties make graphene have good application prospects in the fields of nanoelectronic devices, gas sensors, supercapacitors and energy storage. In particular, graphene has a very high transmittance in the visible light band, the theoretical transmittance of single-layer graphene can reach 97.7% at 550nm, and good electrical and thermal transport properties, making it potentially an ideal transparent conductive material. Material. [0003] In recent ye...

AI Technical Summary

Problems solved by technology

Most of the methods currently used are to prepare graphene or graphene oxide first, and then transfer it to GaN epitaxial wafers by a certain method. During the transfer process, it is easy to cause damage to graphene and the introduction of impurities; at the same time, the relationship between graphene and GaN depends on The combination of van der Waals force is prone to separation or shedding in the subsequent process, thus affecting the performance of the device; in addition, it is not compatible with the existing GaN-based device epitaxy and chip equipment and process, and does not have good industrial promotion

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