Source field plate enhanced algan/gan HEMT device structure and manufacturing method

Abstract

The invention discloses a reinforced AlGaN / GaN HEMT component structure with a source field plate and a manufacturing method of the reinforced AlGaN / GaN HEMT component structure. The structure comprises a substrate, an intrinsic GaN layer, an AlN isolation layer, an intrinsic AlGaN layer, an AlGaN doping layer, a p-type GaN layer, a gate electrode, a source electrode, a drain electrode, the source field plate, an insulation layer, a passivation layer and silicide used for adjusting an electric field of a channel. The AlGaN doping layer is located on the upper portion of the intrinsic AlGaN layer, the gate electrode is located on the upper portion of the p-type GaN layer, and the silicide is located on the upper portion of the insulation layer. A reinforced AlGaN / GaN heterojunction material is arranged on the substrate in an epitaxial growth mode, the source electrode and the drain electrode are formed on the structure, then the insulation layer is deposited, the silicide is formed on the insulation layer, the silicide on the thick insulation layer is electrically connected with the source electrode to form a source field plate structure, a p-GaN epitaxial layer is located on the lower portion of the gate electrode, and a reinforced component is formed. Ultimately, passivation of the component is achieved through deposition of the passivation layer. The structure and the manufacturing method have the advantages of being high in component frequency, process repeatability and controllability.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to the manufacture of semiconductor devices, in particular to a source field plate enhanced AlGaN / GaN HEMT device structure and manufacturing method, which can be used to manufacture low on-resistance, high frequency, high breakdown voltage Enhancement Mode High Electron Mobility Transistor. Background technique [0002] In recent years, the third bandgap semiconductor represented by SiC and GaN has the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. It has received widespread attention. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so in recent years, researchers a...

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Problems solved by technology

AlGaN / GaN heterojunction electron mobility transistors can achieve very high frequencies, but often at the expense of high voltage withstand characteristics

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