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Impurity removal method in the process of preparing CdZnTe crystal by using carbon-coated quartz crucible

The technology of quartz crucible and cadmium zinc telluride is applied in the field of preparation of cadmium zinc telluride crystal, which can solve the problems of CZT crystal twinning and sticking, affecting the performance of CZT crystal, etc., so as to reduce the sticking phenomenon, reduce twinning and improve performance. Effect

Active Publication Date: 2016-03-09
清远先导材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, carbon-coated quartz crucibles are generally used for CZT crystal growth. The oxygen impurities in the raw materials will react with the carbon film, which will make the carbon film thinner or complete the reaction, resulting in twinning and sticking of CZT crystals, thus affecting the final CZT crystal. performance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Impurity removal of cadmium material: Put 200g of 7N cadmium grains into hydrochloric acid with a mass concentration of 15%, soak for 15min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 80°C.

[0020] (2) Impurity removal of zinc material: put 15g of 7N zinc particles into HNO 3 : Deionized water: HF=1.5:9:1 solution, soak for 25min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 80°C.

[0021] (3) Impurity removal of tellurium material: Put 200g of 7N tellurium block into hydrochloric acid with a mass concentration of 25%, soak for 20min, take it out and rinse it with deionized water, put it in a vacuum oven and dry it at 80°C.

[0022] (4) Oxygen removal: Put the above-mentioned three kinds of impurity-removed materials into a carbon-coated quartz crucible, and evacuate the carbon-coated quartz crucible to 3.0×10 -4 Pa, then heat the carbon-coated quartz crucible to 100°C, keep it warm for 2h...

Embodiment 2

[0025] (1) Impurity removal of cadmium material: Put 200g of 7N cadmium grains into hydrochloric acid with a mass concentration of 5%, soak for 30min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 120°C.

[0026] (2) Impurity removal of zinc material: put 15g of 7N zinc particles into HNO 3 : Deionized water: HF=2:8:0.5 solution, soak for 25min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 120°C.

[0027] (3) Impurity removal of tellurium material: Put 200g of 7N tellurium block into hydrochloric acid with a mass concentration of 30%, soak for 5min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 120°C.

[0028] (4) Deoxygenation: the quartz crucible puts the above three materials into the carbon-coated quartz crucible according to the ingredient ratio required for practical application, and vacuumizes the carbon-coated quartz crucible to 2.0×10 -4 Pa, then heat the carb...

Embodiment 3

[0031] (1) Impurity removal of cadmium material: put 200g of 7N cadmium grains into hydrochloric acid with a mass concentration of 30%, soak for 10min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 60°C.

[0032] (2) Impurity removal of zinc material: put 15g of 7N zinc particles into HNO 3 : Deionized water: HF=1.5:9:1 solution, soak for 25 minutes, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 60°C.

[0033] (3) Impurity removal of tellurium material: put 200g of 7N tellurium block into hydrochloric acid with a mass concentration of 5%, soak for 30min, take it out, rinse it with deionized water, put it in a vacuum oven and dry it at 80°C.

[0034] (4) Removal of impurity: put the above-mentioned three kinds of materials after impurity removal into a carbon-coated quartz crucible, and evacuate the carbon-coated quartz crucible to 1.0×10 -4 Pa, then heat the carbon-coated quartz crucible to 200°C, keep it...

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Abstract

The invention provides an impurity removal method in process of preparation of tellurium zinc cadmium crystal by use of a carbon-plated quartz crucible, and the method comprises the following steps: impurity removal of a cadmium material, to be more specific, soaking the cadmium material for preparation of the tellurium zinc cadmium crystal in hydrochloric acid, then washing the soaked cadmium material with deionized water, drying the cadmium material washed with the deionized water in a vacuum oven; impurity removal of a zinc material, to be more specific, soaking the zinc material for preparation of the tellurium zinc cadmium crystal in a mixed acid formed by HNO3, HF and deionized water, then washing the soaked zinc material with the deionized water, drying the zinc material washed with the deionized water in a vacuum oven; and impurity removal of a tellurium material, to be more specific, soaking the tellurium material for preparation of the tellurium zinc cadmium crystal in the hydrochloric acid, then washing the soaked tellurium material with the deionized water, drying the tellurium material washed with the deionized water in a vacuum oven. The method can effectively remove oxygen impurities contained in air in raw materials and the carbon-plated quartz crucible to protect the carbon-plated quartz crucible.

Description

technical field [0001] The invention relates to a preparation method of cadmium zinc telluride crystal, in particular to a method for removing impurities in the process of preparing cadmium zinc telluride crystal by adopting a carbon-coated quartz crucible. Background technique [0002] Cadmium zinc telluride (CZT) crystal has become an important semiconductor material because of its excellent optical and electrical properties, and is widely used as the epitaxial substrate of infrared detector HgCdTe and room temperature nuclear radiation detector. [0003] At present, carbon-coated quartz crucibles are generally used for CZT crystal growth. The oxygen impurities in the raw materials will react with the carbon film, which will make the carbon film thinner or complete the reaction, resulting in twinning and sticking of CZT crystals, thus affecting the final CZT crystal. performance. Contents of the invention [0004] In view of the problems in the background technology, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B35/00
Inventor 文崇斌胡智向卢金生
Owner 清远先导材料有限公司
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