28 results about "Oxygen impurity" patented technology

The invention provides a many-for-one alkaline electrolytic hydrogen production system separator capacity design method and device based on an improved multi-objective optimization search algorithm, and belongs to the technical field of hydrogen production system capacity configuration. Comprising the following steps: establishing a thermal-mass coupling dynamic model of an N-in-1 alkaline electrolytic hydrogen production system, including an accumulation dynamic model of oxygen impurity HTO in hydrogen and a thermal inertia model; defining multi-dimensional performance indexes, including starting time, HTO fluctuation index, temperature consistency and low-load operation time; taking the separator capacity as a decision variable, and taking minimization of starting time and HTO fluctuation index and maximization of low-load operation time as optimization objectives to construct a multi-objective optimization model; and solving the multi-objective optimization model by using an improved non-dominated sorting genetic algorithm NSGA-II, obtaining a Pareto optimal solution set of the separator capacity, and obtaining a separator capacity configuration result.

This invention relates to the field of ceramic materials and provides a method for preparing silicon nitride powder, solving the problem of high residual chlorine / oxygen impurities due to the difficulty in removing byproducts during the preparation of silicon nitride in existing technologies. The method includes the following steps: S1, constructing an electrochemical cell: the anode material is a high-purity single-crystal silicon wafer; the cathode material is a graphite plate; the electrolyte is a mixed solvent of liquid ammonia and ethylenediamine with added LiCl electrolyte; S2, electrochemical ammonolysis reaction: under the action of an electric field, the silicon anode is oxidized to generate high-valence silicon-ammonia complex ions; the NH2 released from the liquid ammonia... ‑ The precursor migrates and combines towards the anode to generate a silane precursor containing Si-NH2 bonds; S3, the precursor is purified by washing with liquid ammonia, replacing with organic solvent and drying at low temperature; S4, the precursor is subjected to low-temperature pre-decomposition and high-temperature crystallization treatment under nitrogen protection to obtain high-purity α-Si3N4.

The invention discloses a preparation method of a low-oxygen magnesium fluoride crystal, and belongs to the technical field of crystal preparation. After the raw materials are molten, the mixed gas activated by the catalytic net is introduced into the crystal furnace in an intermittent pulse mode, active fluorine species in the mixed gas and oxygen impurities on the surface of the melt can be subjected to fluorination reaction so as to reduce the content of the oxygen impurities, airflow in the intermittent pulse ventilation mode is matched with rotation of the crucible to disturb the melt, a reaction interface is updated, and the reaction efficiency is improved. And finally, the low-oxygen magnesium fluoride crystal is obtained through a pulling method.

The invention relates to the technical field of ceramic materials, and discloses a preparation method of ceramic powder, which comprises the following steps: S1, dissolving an organic binder in anhydrous aliphatic monohydric alcohol to prepare a binder solution; s2, mixing the binder solution prepared in the step S1 with boron carbide powder, and carrying out ball milling treatment to obtain slurry; and S3, carrying out spray granulation treatment on the slurry obtained in the step S2 to obtain first spherical powder. The anhydrous aliphatic monohydric alcohol is adopted as a solvent system, so that the oxygen impurity content in the final powder is effectively reduced, and the fluidity (apparent density) and sphericity of the ceramic powder and the performance of a ceramic product are improved.

The application discloses a kind of multicomponent boride and preparation method thereof, belong to carbide ceramic technical field.The application uses multicomponent alloy bulk as raw material, after hydrogenation treatment is carried out to raw material, then using the method of organic carbon source coating obtains carbon-coated mixture, then carbon-coated mixture is mixed with boric acid and is dried before sintering to obtain multicomponent boride.The above preparation method can avoid the oxygen impurity brought by conventional metal powder as raw material, avoid multicomponent metal hydride and boric acid contact reaction to generate boride at high temperature, at the same time organic carbon source can reduce boron element in boric acid and diffuse into carbide lattice, and react with excess oxygen element to form CO / CO2 gas, no second phase oxide impurity is formed in boride, and only needs to be at relatively low temperature 800-1300 DEG C, complete carbonization, boronization process, greatly reduce process condition, it is favorable to scale production multicomponent boride.

The present application belongs to the technical field of electrochemical gas separation and purification, and particularly relates to a flat-plate solid oxide oxygen ion conductor membrane reactor, a preparation method and application, and is particularly suitable for removing trace oxygen impurities; the solid oxide oxygen ion conductor membrane reactor adopts LSGM electrolyte, and composite material BSCF-SDC is used as the cathode and the anode; the membrane reactor can realize high removal of trace oxygen in argon under the condition of 750-900 DEG C and 1-2.0 V, so that the oxygen content can be lower than 10 ppm; the membrane reactor has the advantages of low energy consumption, high stability, no secondary pollution and the like, and is suitable for preparation of high-purity argon in the fields of semiconductor manufacturing, metal smelting and the like.

The utility model discloses a hydrogen removal purification device and relates to the technical field of hydrogen purification. A hydrogen removal purification device comprises a gas purification device, a gas filtering device is fixedly installed on the left side of the gas purification device, and the top end of the gas purification device is communicated with a reaction device through a first communication valve. According to the hydrogen removal purification device, the gas purification device is arranged, ion impurities, grease and oxygen impurities in mixed gas can be removed through a deionization part, an adsorption part and a catalysis part in the purification box, and in the process of removing the impurities in the mixed gas, the impurities in the hydrogen mixed gas can be directly removed through reaction; therefore, the hydrogen purification efficiency is improved, the gas is pretreated before entering the reaction device, the purity of the hydrogen is improved, and a good foundation is provided for subsequent gas reaction.

The invention provides low-oxygen-content silicon nitride powder and a preparation method thereof, and belongs to the technical field of silicon nitride preparation. The preparation method comprises the following steps: by taking amine with a steric hindrance group as a raw material, synthesizing a nitrogen-loving and oxygen-phobic polysilazane precursor capable of resisting water decomposition and erosion; a precursor and a catalyst precursor are co-wrapped by PEG-PPG-PEG, so that excellent dispersity of final powder is preset, a catalyst is pre-embedded for a subsequent carbon removal step, and mild low-temperature curing is realized through supercritical ammonia; in the step-by-step pyrolysis process, the template is firstly removed to physically isolate particles, then the pre-buried catalyst is activated, and solid residual carbon is actively converted into gas to be removed; in the high-temperature crystallization stage, the rule that impurities are naturally segregated to particle surfaces is utilized, high-activity gas-phase chemical etching is assisted for surface treatment, solid oxygen impurities are converted into volatile gaseous products to be removed, and the low oxygen content of the final product is ensured.

The invention discloses a process control method for deeply removing hydrogen and oxygen impurities in molten steel in an RH (Ruhrstahl Heraeus) vacuum circulating degassing device. The process control method comprises the following steps that a steel ladle is pretreated to be continuously used for six times, the temperature of a refractory material is 1020 DEG C, the slag thickness of the steel ladle is smaller than the upper limit of 200mm, and the water content of a gunning material of a dip pipe is 0.03%. Alloy and raw and auxiliary materials used in the RH furnace are baked, the moisture content of the alloy is reduced, the moisture content of the alloy is smaller than or equal to 0.5%, and the moisture content of the raw and auxiliary materials is smaller than or equal to 1% according to the weight percentage; the alloy components are adjusted to be within an internal control range before the molten steel with the alloy components adjusted enters an RH furnace, it is guaranteed that component adjustment is reduced as much as possible in the RH vacuum treatment process so as to reduce the content of hydrogen brought into steel by the alloy, and multi-stage vacuum pump dynamic cooperative control is adopted for vacuum building. Argon consumption is reduced through flow reduction in the last stage, interference of temperature drop on the degassing process is avoided, and molten steel temperature fluctuation is smaller than or equal to + / -3 DEG C.

The application discloses a novel oxygen-reducing hot field, wherein an upper heat preservation barrel is arranged on a middle heat preservation barrel, and the upper heat preservation barrel and the middle heat preservation barrel are coaxially arranged; the inner diameter of the upper heat preservation barrel is the same as that of the middle heat preservation barrel; when the top of a crucible is arranged in the upper heat preservation barrel, a gap between the inner wall of the upper heat preservation barrel and the outer sidewall of the crucible forms a second airflow path, and a gap between the inner wall of the middle heat preservation barrel and the outer sidewall of the crucible forms a first airflow path. The upper heat preservation barrel and the lower heat preservation barrel are coaxially arranged and have the same inner diameter, so that the width of the first airflow path and the second airflow path formed during the lifting of the crucible is kept consistent, the airflow path is not narrowed, the argon flow is not blocked, the gas in the cavities of the upper heat preservation barrel and the lower heat preservation barrel is continuously and efficiently exchanged, the oxygen impurities volatilized from the crystal pulling liquid surface can be timely and sufficiently removed, the oxygen impurity content in the monocrystalline silicon is obviously reduced, and the quality of the monocrystalline silicon is improved.

The application belongs to the technical field of impurity monitoring, and discloses a source furnace silicon-oxygen impurity monitoring method and device, electronic equipment and storage medium, the method comprises the following steps: acquiring the real-time main source mass spectrum signal of the main source material and the real-time impurity original mass spectrum signal of the silicon-oxygen impurity in the source furnace heating process in real time, according to the real-time main source mass spectrum signal and the real-time impurity original mass spectrum signal, combining the initial main source mass spectrum signal of the main source material and the initial impurity mass spectrum signal of the silicon-oxygen impurity when the source furnace starts heating, the actual impurity signal of the silicon-oxygen impurity is calculated, based on the real-time main source mass spectrum signal and the actual impurity signal, the evaporation rate data of the main source material and the change trend information of the silicon-oxygen impurity are calculated respectively, to determine the dynamic early warning threshold, monitor the actual impurity signal, when the actual impurity signal is greater than or equal to the dynamic early warning threshold, it is determined that the release of the silicon-oxygen impurity is too high; through the above method, the production efficiency of the epitaxial film is improved.

The utility model discloses a kind of flow guide structure and single crystal furnace applied to single crystal furnace hot field.The flow guide structure can include: flow guide cylinder and flow guide component, wherein, flow guide component includes first flow guide part and second flow guide part, first flow guide part extends from the outer periphery of the lower end opening of flow guide cylinder in the direction of radial away from the central axis of flow guide cylinder and simultaneously downwardly inclined relative to the lower end opening outer periphery of flow guide cylinder, second flow guide part extends from the extension end of first flow guide part in the direction of radial away from the central axis of flow guide cylinder and simultaneously upwardly inclined relative to first flow guide part.The flow guide structure can accelerate the argon flow rate passing through liquid surface, to take away more oxygen impurities, reduce the oxygen content of drawn single crystal silicon rod.

The utility model provides a single crystal furnace thermal field, which is characterized in that a first electrode foot plate and a second electrode foot plate are respectively arranged at the bottom of an annular heating element and are positioned on two sides of the annular heating element, a main heater heats the upper part of a crucible, and the annular heating element is sleeved at the lower part of the crucible and heats the lower part of the crucible. According to the single crystal furnace thermal field, the main heater and the bottom heater are used for heating the crucible at the same time, and the temperature difference in the crucible can be effectively reduced, so that the convection of a silicon solution in the crucible is more uniform, the doping of oxygen impurities into a single crystal bar is reduced, and the quality of the single crystal bar is ensured. The heating area of the crucible can be effectively increased, the temperature difference in the crucible is reduced, convection of a silicon solution in the crucible can be more uniform, and the situation that oxygen impurities are doped into a single crystal bar is reduced.

The invention relates to a preparation method of high-purity calcium fluoride. The preparation method comprises the following steps: 1) heat treatment: carrying out first-stage heat treatment on a calcium fluoride raw material under inert gas protection or a vacuum environment; 2) deep deoxidation: introducing fluorine-containing gas into the calcium fluoride material obtained in the step 1) to carry out a second-stage thermal reaction; and 3) cooling and post-processing: stopping heating after the reaction is finished, and cooling the material to room temperature under the protection of inert gas atmosphere to obtain the product. According to the method, the strong oxidizing property of the fluorine-containing gas and the synergistic effect under high temperature and high pressure are utilized, oxygen impurities in calcium fluoride can be deeply removed, the oxygen content of the finally obtained high-purity calcium fluoride product is reduced to 18 ppm or below from about 356 ppm, and the requirement of the high-end optical field can be completely met.

The invention belongs to the technical field of impurity monitoring, and discloses a source furnace silica impurity monitoring method and device, electronic equipment and a storage medium, and the method comprises the steps: obtaining a real-time main source mass spectrum signal of a main source material and a real-time impurity original mass spectrum signal of silica impurities in a heating process of a source furnace in real time; according to the real-time main source mass spectrum signal and the real-time impurity original mass spectrum signal, in combination with the initial main source mass spectrum signal of the main source material and the initial impurity mass spectrum signal of the silica impurities when the source furnace begins to heat, calculating to obtain an actual impurity signal of the silica impurities, and based on the real-time main source mass spectrum signal and the actual impurity signal, calculating the actual impurity signal of the silica impurities. Respectively calculating evaporation rate data of the main source material and change trend information of the silica impurities to determine a dynamic early warning threshold value and monitor an actual impurity signal so as to determine that the release of the silica impurities is too high when the actual impurity signal is greater than or equal to the dynamic early warning threshold value; through the method, the production efficiency of the epitaxial film is improved.

The present application relates to the field of polysilicon quality detection, and more particularly to a low-impurity uniformity quality control rod based on a zone-melting single crystal silicon rod and a preparation and application method thereof. The quality control rod is made of a zone-melting single crystal silicon rod meeting the uniformity standard, has a diameter of 20±0.05 mm and a length of 160±0.1 mm, and the impurity content meets the following requirements: phosphorus <100 ppta, boron <20 ppta, carbon <20 ppba, and oxygen <20 ppba; the variation coefficients of the impurity contents of phosphorus, boron, carbon, and oxygen in the quality control rod and between batches are all ≤3%. The present application overcomes the influence of the radial impurity unevenness of the traditional polysilicon raw material, ensures that the key impurity contents of the prepared quality control rod are highly consistent, the variation coefficient (CV) can be stably controlled within 5%, and a stable and reliable measurement reference is obtained.

The invention relates to the technical field of alloy target material preparation, in particular to a low-oxygen molybdenum-niobium alloy target material and a preparation method thereof. According to the technical scheme, the low-oxygen molybdenum-niobium alloy target material comprises the composition proportion of the low-oxygen molybdenum-niobium alloy target material and the preparation method of the low-oxygen molybdenum-niobium alloy target material. According to the preparation method, the carbon nano tube with high specific surface area and activity is adopted to replace traditional carbon black, strong deoxidation elements of titanium and aluminum are added, a multi-stage and synergistic reduction environment is formed in the sintering process, the carbon nano tube can provide rich reaction sites and preferentially react with an oxide layer on the surface of niobium powder, and therefore the oxidation layer on the surface of the niobium powder is reduced; titanium and aluminum are further combined with oxygen dissolved in a matrix to form a stable compound, so that the removal depth of oxygen impurities and the overall deoxidation efficiency are remarkably improved, the overall oxygen content of the target material can be reduced to a lower level, and brittle phase and impurity precipitation caused by oxygen is effectively reduced, so that the mechanical property of the target material is improved.

The application discloses a medical gas impurity removal system based on pressure swing adsorption, and particularly relates to the technical field of gas separation and purification, and is used for solving how to construct a set of on-site oxygen production impurity control mechanism without changing the hospital pipe network, so that the produced gas can continuously meet the limit value under fluctuation and aging working conditions, and can be automatically isolated and switched and form traceable evidence in an abnormal situation. Through the sequential linkage of six modules of gas inlet pretreatment, segmented adsorption, online monitoring, self-adaptive control, health assessment, quality gate and traceability, the stable removal of impurities such as moisture, carbon monoxide, carbon dioxide, nitrogen oxides, sulfur dioxide and oil mist under the conditions of dynamic working conditions and adsorbent performance attenuation is realized, the produced gas can be timely blocked and the redundant gas supply can be switched when the impurity concentration is abnormal, the oxygen entering the medical pipe network can continuously meet the use requirements, and thus the deficiencies of the existing pressure swing adsorption oxygen production device in the aspects of impurity continuous control and gas supply compliance guarantee are solved.

The invention discloses a method for removing oxygen impurities in titanium-aluminum alloy through electromagnetic suspension, and relates to the technical field of titanium alloy waste deoxidation. The preparation method specifically comprises the following steps that titanium-aluminum alloy is cut, and titanium-aluminum alloy particles are obtained; the titanium-aluminum alloy particles are placed in suspension equipment, argon-hydrogen mixed gas is introduced into the suspension equipment, suspension smelting is conducted on the titanium-aluminum alloy particles, and suspension molten drops are obtained; the suspended molten drops are subjected to suspended deoxidation treatment, and the suspended molten drops subjected to deoxidation treatment are collected after deoxidation treatment is finished; and argon-hydrogen mixed gas is continuously introduced into the deoxidized suspended molten drops for cooling, and the titanium-aluminum alloy with oxygen impurities removed is obtained. According to the method, the impurity oxygen in the titanium-aluminum alloy is efficiently removed in an electromagnetic induction mode, the deoxidation product is only water vapor, and compared with a traditional metal thermal reduction deoxidation method, the method has the advantages of being efficient and free of deoxidation by-products.

The application discloses an oxygen removal method of alkyl metal precursors, comprising the following steps: contacting the alkyl metal precursors containing oxygen impurities with selected metals, and heating the reaction to reduce the oxygen impurities; the standard hydrogen reduction potential of the selected metal magnesium is-2.37V. The oxygen removal method provided by the application can realize good oxygen removal and purification effect by reacting the metal magnesium with the oxygen-containing components, and then heating and stirring, so that stable low-oxygen alkyl metal precursors are obtained, the inorganic purity of which reaches 99.9999%, and the oxygen content is less than 5ppm. The metal element potential sequence in the alkyl metal precursors is relatively low, which can significantly improve the impurity removal reaction rate. The chemical properties of the metal element are stable, and the metal element can be recycled and reused. The process flow of the application is simple, new impurities are not introduced, the treatment efficiency and impurity removal efficiency are relatively high, the operation is convenient, and the application prospect is very wide.

This invention discloses a three-step heat treatment process for DLP photopolymerization of pure copper based on in-situ ionic solutions. The first pass involves multi-stage heat preservation and degreasing under argon atmosphere to prevent cracking. The second pass introduces air at high temperature to thoroughly oxidize residual carbon. The third pass involves high-temperature reduction sintering under a hydrogen-argon mixture, supplemented by cooling buffering to release thermal stress. This invention's process is highly compatible with in-situ ionic systems, effectively eliminating carbon and oxygen impurities while ensuring process safety and structural integrity. The final pure copper part can completely retain the complex macroscopic morphology of DLP printing, without defects such as cracking or bubbling, and reproduces the design shape with high fidelity. It is suitable for the large-scale preparation of high-precision, complex-structure pure copper parts.

The invention discloses a fluorination pretreatment assisted cobalt-lanthanum bimetal gradient loaded 10X molecular sieve adsorbent and a preparation method thereof, and belongs to the technical field of molecular sieve materials. The method comprises the following steps: pretreating a 10X molecular sieve with water vapor, and carrying out fluorination modification by adopting a plasma-assisted solid fluorine source; then, sequentially putting the fluorine modified molecular sieve into a mixed solution with gradually increased cobalt and lanthanum ion concentration gradient, and carrying out microwave-assisted gradient ion exchange; and finally, activating, forming and calcining to obtain the finished adsorbent. The molecular sieve pore channel and surface acidity are optimized through fluorination pretreatment, high dispersion and gradient loading of cobalt and lanthanum bimetals in the molecular sieve pore channel from outside to inside are realized by combining a gradient ion exchange technology, and the adsorption capacity and selectivity of the adsorbent on oxygen-containing impurities such as alcohol, aldehyde and ketone in olefin are remarkably enhanced through cooperation of the cobalt and lanthanum bimetals; the method can be used for deep purification of olefins.

The invention discloses a hydrogen production electrolytic cell regulation and control method and system considering multi-target cooperation, and belongs to the technical field of water electrolysis hydrogen production and new energy consumption. The method comprises the steps that an electrolytic cell electrochemical model and a dynamic accumulation model of oxygen impurities in hydrogen are established; constructing a multi-target fitness function taking economical efficiency tracking and security penalty as a core, and setting security constraints; a genetic algorithm is combined with a model predictive control (GA-MPC) framework, an optimal current distribution instruction of each electrolytic cell is solved in an online rolling mode, and smooth and accurate issuing of the instruction is achieved through an affine control strategy. According to the system, the GA-MPC collaborative optimization architecture and the controller are integrated. According to the method, dynamic balance of economy and safety in the hydrogen production process is achieved, the flexibility and safety margin of the system are improved through HTO dynamic prediction, high-precision and rapid tracking of a power instruction is ensured through affine control, and the operation energy efficiency, safety and response capacity of an electrolytic cell cluster under new energy fluctuation are effectively improved.

This application discloses an antimony-based oxygen-suppressing AlGaInP red micro-LED chip and its fabrication method. The chip epitaxial wafer includes a GaAs substrate, an n-type GaAs buffer layer, an n-type AlGaInP etch barrier layer, an n-type GaAs ohmic contact layer, an n-type AlGaInP confinement layer, a quantum well structure, a p-type AlGaInP spacer layer, a p-type AlInP electron blocking layer, and a p-type GaP ohmic contact layer. Antimony atoms are doped into the high-aluminum-content n-type AlGaInP confinement layer, quantum barrier layer, p-type AlGaInP spacer layer, and p-type AlInP electron blocking layer. By utilizing the preferential occupation of active sites on the aluminum surface by antimony atoms, the adsorption path of oxygen atoms is blocked, reducing the oxygen impurity incorporation rate of the epitaxial layer by more than 50%, significantly suppressing the formation of deep-level defects and sidewall leakage in aluminum-oxygen, improving the quantum efficiency and reliability of the device, and simplifying the fabrication process and reducing production costs.

A hydrogenation treatment method of a mixed oil including a waste bio-oil and a waste plastic pyrolysis oil, and a method for producing a refined oil including the hydrogenation treatment method providing a refined oil having reduced impurities to a refined raw material level, and, in particular, significantly reduced oxygen impurities which have been contained in a large amount.

The invention relates to the technical field of metal material modification, and discloses a heat treatment method for improving alloy grain boundary strength, which comprises the following steps: laying a solid gas phase generation source formed by filling gaps of framework particles with reaction precursor powder at the bottom of a graphite box, homogeneous metal or alloy chippings which are consistent with the chemical components of the workpiece are accumulated on the sacrificial filter layer as a sacrificial filter layer; placing the workpiece and the graphite box in a vacuum furnace for degassing in a non-contact manner at a specific horizontal distance; and performing periodic pressure gating treatment, and alternately performing an atmosphere generation and filtering stage for maintaining high vacuum and a blocking and diffusion stage for filling inert gas to establish back pressure. The dynamic matching of the gas phase generation rate and the solid diffusion rate is accurately regulated and controlled through breathing type pressure pulse circulation, and associated carbon and oxygen impurities are intercepted by using a homogeneous filter layer. And the deep strengthening of the grain boundary is realized on the premise of keeping the original smooth finish of the surface of the workpiece.

The invention discloses a method for removing water on the surface of titanium sponge. The method comprises the following steps that dry argon at the temperature of 100-120 DEG C is adopted for purging the surface of the sponge titanium, moisture adsorbed on the surface of the sponge titanium is separated from the surface of the sponge titanium and volatilized under the heating and replacement effects of hot argon, cooling and packaging are conducted in the dry argon environment, and the purpose of removing moisture is achieved. The method can greatly reduce moisture adsorbed on the surface of the sponge titanium so as to reduce hydrogen and oxygen impurities brought in by the sponge titanium in the smelting process, and is simple to operate, low in cost and worthy of popularization and application.