10 results about "Oxygen impurity" patented technology

This invention relates to the field of ceramic materials and provides a method for preparing silicon nitride powder, solving the problem of high residual chlorine / oxygen impurities due to the difficulty in removing byproducts during the preparation of silicon nitride in existing technologies. The method includes the following steps: S1, constructing an electrochemical cell: the anode material is a high-purity single-crystal silicon wafer; the cathode material is a graphite plate; the electrolyte is a mixed solvent of liquid ammonia and ethylenediamine with added LiCl electrolyte; S2, electrochemical ammonolysis reaction: under the action of an electric field, the silicon anode is oxidized to generate high-valence silicon-ammonia complex ions; the NH2 released from the liquid ammonia... ‑ The precursor migrates and combines towards the anode to generate a silane precursor containing Si-NH2 bonds; S3, the precursor is purified by washing with liquid ammonia, replacing with organic solvent and drying at low temperature; S4, the precursor is subjected to low-temperature pre-decomposition and high-temperature crystallization treatment under nitrogen protection to obtain high-purity α-Si3N4.

The application discloses a kind of multicomponent boride and preparation method thereof, belong to carbide ceramic technical field.The application uses multicomponent alloy bulk as raw material, after hydrogenation treatment is carried out to raw material, then using the method of organic carbon source coating obtains carbon-coated mixture, then carbon-coated mixture is mixed with boric acid and is dried before sintering to obtain multicomponent boride.The above preparation method can avoid the oxygen impurity brought by conventional metal powder as raw material, avoid multicomponent metal hydride and boric acid contact reaction to generate boride at high temperature, at the same time organic carbon source can reduce boron element in boric acid and diffuse into carbide lattice, and react with excess oxygen element to form CO / CO2 gas, no second phase oxide impurity is formed in boride, and only needs to be at relatively low temperature 800-1300 DEG C, complete carbonization, boronization process, greatly reduce process condition, it is favorable to scale production multicomponent boride.

The present application belongs to the technical field of electrochemical gas separation and purification, and particularly relates to a flat-plate solid oxide oxygen ion conductor membrane reactor, a preparation method and application, and is particularly suitable for removing trace oxygen impurities; the solid oxide oxygen ion conductor membrane reactor adopts LSGM electrolyte, and composite material BSCF-SDC is used as the cathode and the anode; the membrane reactor can realize high removal of trace oxygen in argon under the condition of 750-900 DEG C and 1-2.0 V, so that the oxygen content can be lower than 10 ppm; the membrane reactor has the advantages of low energy consumption, high stability, no secondary pollution and the like, and is suitable for preparation of high-purity argon in the fields of semiconductor manufacturing, metal smelting and the like.

The application discloses a novel oxygen-reducing hot field, wherein an upper heat preservation barrel is arranged on a middle heat preservation barrel, and the upper heat preservation barrel and the middle heat preservation barrel are coaxially arranged; the inner diameter of the upper heat preservation barrel is the same as that of the middle heat preservation barrel; when the top of a crucible is arranged in the upper heat preservation barrel, a gap between the inner wall of the upper heat preservation barrel and the outer sidewall of the crucible forms a second airflow path, and a gap between the inner wall of the middle heat preservation barrel and the outer sidewall of the crucible forms a first airflow path. The upper heat preservation barrel and the lower heat preservation barrel are coaxially arranged and have the same inner diameter, so that the width of the first airflow path and the second airflow path formed during the lifting of the crucible is kept consistent, the airflow path is not narrowed, the argon flow is not blocked, the gas in the cavities of the upper heat preservation barrel and the lower heat preservation barrel is continuously and efficiently exchanged, the oxygen impurities volatilized from the crystal pulling liquid surface can be timely and sufficiently removed, the oxygen impurity content in the monocrystalline silicon is obviously reduced, and the quality of the monocrystalline silicon is improved.

The utility model discloses a kind of flow guide structure and single crystal furnace applied to single crystal furnace hot field.The flow guide structure can include: flow guide cylinder and flow guide component, wherein, flow guide component includes first flow guide part and second flow guide part, first flow guide part extends from the outer periphery of the lower end opening of flow guide cylinder in the direction of radial away from the central axis of flow guide cylinder and simultaneously downwardly inclined relative to the lower end opening outer periphery of flow guide cylinder, second flow guide part extends from the extension end of first flow guide part in the direction of radial away from the central axis of flow guide cylinder and simultaneously upwardly inclined relative to first flow guide part.The flow guide structure can accelerate the argon flow rate passing through liquid surface, to take away more oxygen impurities, reduce the oxygen content of drawn single crystal silicon rod.

The present application relates to the field of polysilicon quality detection, and more particularly to a low-impurity uniformity quality control rod based on a zone-melting single crystal silicon rod and a preparation and application method thereof. The quality control rod is made of a zone-melting single crystal silicon rod meeting the uniformity standard, has a diameter of 20±0.05 mm and a length of 160±0.1 mm, and the impurity content meets the following requirements: phosphorus <100 ppta, boron <20 ppta, carbon <20 ppba, and oxygen <20 ppba; the variation coefficients of the impurity contents of phosphorus, boron, carbon, and oxygen in the quality control rod and between batches are all ≤3%. The present application overcomes the influence of the radial impurity unevenness of the traditional polysilicon raw material, ensures that the key impurity contents of the prepared quality control rod are highly consistent, the variation coefficient (CV) can be stably controlled within 5%, and a stable and reliable measurement reference is obtained.

This invention discloses a three-step heat treatment process for DLP photopolymerization of pure copper based on in-situ ionic solutions. The first pass involves multi-stage heat preservation and degreasing under argon atmosphere to prevent cracking. The second pass introduces air at high temperature to thoroughly oxidize residual carbon. The third pass involves high-temperature reduction sintering under a hydrogen-argon mixture, supplemented by cooling buffering to release thermal stress. This invention's process is highly compatible with in-situ ionic systems, effectively eliminating carbon and oxygen impurities while ensuring process safety and structural integrity. The final pure copper part can completely retain the complex macroscopic morphology of DLP printing, without defects such as cracking or bubbling, and reproduces the design shape with high fidelity. It is suitable for the large-scale preparation of high-precision, complex-structure pure copper parts.

This application discloses an antimony-based oxygen-suppressing AlGaInP red micro-LED chip and its fabrication method. The chip epitaxial wafer includes a GaAs substrate, an n-type GaAs buffer layer, an n-type AlGaInP etch barrier layer, an n-type GaAs ohmic contact layer, an n-type AlGaInP confinement layer, a quantum well structure, a p-type AlGaInP spacer layer, a p-type AlInP electron blocking layer, and a p-type GaP ohmic contact layer. Antimony atoms are doped into the high-aluminum-content n-type AlGaInP confinement layer, quantum barrier layer, p-type AlGaInP spacer layer, and p-type AlInP electron blocking layer. By utilizing the preferential occupation of active sites on the aluminum surface by antimony atoms, the adsorption path of oxygen atoms is blocked, reducing the oxygen impurity incorporation rate of the epitaxial layer by more than 50%, significantly suppressing the formation of deep-level defects and sidewall leakage in aluminum-oxygen, improving the quantum efficiency and reliability of the device, and simplifying the fabrication process and reducing production costs.