48 results about "Oxygen impurity" patented technology

In one form of the present disclosure, a quantum sensor comprises a quantum device. The quantum device comprises gallium nitride (GaN) with a color center with a zero-phonon line (ZPL) between about 900 nanometers (nm) and about 990 nm. The GaN can be doped with silicon (Si) and have low carbon (C) and oxygen (O) impurities. In one example, the quantum device is GaN doped with about 1016 atoms of Si per cm3, having less than about 8×1015 C atoms per cm3 and less than about 6×1015 O atoms per cm3, and a Ga vacancy density less than about 1016 vacancies per cm3.

The invention discloses a carbon fluoride molecular sieve adsorbent, a preparation method thereof and application of the carbon fluoride molecular sieve adsorbent in purification of electronic-grade fluorine-nitrogen mixed gas. According to the method, a stable passivation layer composed of fluorine-containing chemical bonds is formed on the inner surface and the outer surface of a carbon material through direct fluorination treatment on a carbon molecular sieve. Compared with other fluorination methods, the method has the advantages of higher fluorination degree and lower reaction temperature; meanwhile, the operation is simple, and the thermal stability of fluorine-containing groups on the surface of the treated carbon molecular sieve is good. The fluorinated carbon molecular sieve adsorbent has greatly improved corrosion resistance, can maintain stable adsorption separation performance in gas atmospheres with extremely strong corrosivity, such as fluorine gas and hydrogen fluoride, and is suitable for deep removal of trace oxygen impurities in electronic-grade gas fluorine-nitrogen mixed gas.

The invention discloses a preparation method for preparing oxygen-free copper through efficient impurity removal of recycled copper, which comprises the following steps: heating and melting the recycled copper to obtain a recycled copper melt, and determining the content of copper element by adopting spectral analysis; oxygen is continuously introduced into the regenerated copper melt, impurity removal agent powder is weighed according to the content of impurity elements and sprayed into the furnace together with the oxygen to react with impurities in the melt, and the regenerated copper melt subjected to impurity removal is obtained; continuously introducing natural gas melt into the regenerated copper melt subjected to impurity removal, weighing deoxidant powder according to oxygen content in the natural gas melt, and spraying the deoxidant powder into the furnace by using the natural gas to react with oxygen in the melt, so as to obtain a regenerated copper melt subjected to oxygen removal; and standing the deoxidized regenerated copper melt, removing scum in the melt, and casting to obtain an oxygen-free copper product. According to the method, the impurity removal agent and the deoxidant powder are used in a combined mode, the time needed by oxygen impurity removal and natural gas reduction is shortened, the quality of the molten copper is improved, consumption of production materials is reduced, the production efficiency is improved, the production cost and pollution to the atmospheric environment are reduced, and the method is suitable for large-scale application.

The present application relates to a kind of bifunctional catalyst and its preparation method and application, the catalyst includes catalyst active component and carrier, the active component includes noble metal and non-noble metal, wherein noble metal active component is at least one of Pt, Pd, Ag, Ru and Rh.The non-noble metal active component is Mo and Ni.The catalyst provided by the present application can simultaneously remove acetylene and oxygen impurities in ethylene, wherein acetylene and hydrogen react to generate ethylene, and oxygen and hydrogen react to generate water and are removed.Compared with the catalyst for removing single impurity, the catalyst can reduce the investment of purification device, reduce production cost, and has obvious economic benefits.

The invention provides a many-for-one alkaline electrolytic hydrogen production system separator capacity design method and device based on an improved multi-objective optimization search algorithm, and belongs to the technical field of hydrogen production system capacity configuration. Comprising the following steps: establishing a thermal-mass coupling dynamic model of an N-in-1 alkaline electrolytic hydrogen production system, including an accumulation dynamic model of oxygen impurity HTO in hydrogen and a thermal inertia model; defining multi-dimensional performance indexes, including starting time, HTO fluctuation index, temperature consistency and low-load operation time; taking the separator capacity as a decision variable, and taking minimization of starting time and HTO fluctuation index and maximization of low-load operation time as optimization objectives to construct a multi-objective optimization model; and solving the multi-objective optimization model by using an improved non-dominated sorting genetic algorithm NSGA-II, obtaining a Pareto optimal solution set of the separator capacity, and obtaining a separator capacity configuration result.

This invention relates to the field of ceramic materials and provides a method for preparing silicon nitride powder, solving the problem of high residual chlorine / oxygen impurities due to the difficulty in removing byproducts during the preparation of silicon nitride in existing technologies. The method includes the following steps: S1, constructing an electrochemical cell: the anode material is a high-purity single-crystal silicon wafer; the cathode material is a graphite plate; the electrolyte is a mixed solvent of liquid ammonia and ethylenediamine with added LiCl electrolyte; S2, electrochemical ammonolysis reaction: under the action of an electric field, the silicon anode is oxidized to generate high-valence silicon-ammonia complex ions; the NH2 released from the liquid ammonia... ‑ The precursor migrates and combines towards the anode to generate a silane precursor containing Si-NH2 bonds; S3, the precursor is purified by washing with liquid ammonia, replacing with organic solvent and drying at low temperature; S4, the precursor is subjected to low-temperature pre-decomposition and high-temperature crystallization treatment under nitrogen protection to obtain high-purity α-Si3N4.

The invention discloses a preparation method of a low-oxygen magnesium fluoride crystal, and belongs to the technical field of crystal preparation. After the raw materials are molten, the mixed gas activated by the catalytic net is introduced into the crystal furnace in an intermittent pulse mode, active fluorine species in the mixed gas and oxygen impurities on the surface of the melt can be subjected to fluorination reaction so as to reduce the content of the oxygen impurities, airflow in the intermittent pulse ventilation mode is matched with rotation of the crucible to disturb the melt, a reaction interface is updated, and the reaction efficiency is improved. And finally, the low-oxygen magnesium fluoride crystal is obtained through a pulling method.

The invention relates to the technical field of ceramic materials, and discloses a preparation method of ceramic powder, which comprises the following steps: S1, dissolving an organic binder in anhydrous aliphatic monohydric alcohol to prepare a binder solution; s2, mixing the binder solution prepared in the step S1 with boron carbide powder, and carrying out ball milling treatment to obtain slurry; and S3, carrying out spray granulation treatment on the slurry obtained in the step S2 to obtain first spherical powder. The anhydrous aliphatic monohydric alcohol is adopted as a solvent system, so that the oxygen impurity content in the final powder is effectively reduced, and the fluidity (apparent density) and sphericity of the ceramic powder and the performance of a ceramic product are improved.

A method for providing hydrogen, comprising: releasing hydrogen (H2) in a dehydrogenation reactor (2) by catalytic dehydrogenation of at least partially loaded hydrogen carrier medium (Hx-LOHC) to form at least partially unloaded hydrogen carrier medium (H0-LOHC); oxidizing the at least partially unloaded hydrogen carrier medium (H0-LOHC) in an oxidation reactor (5) by catalytic oxidation with an oxidizing agent to form at least partially oxidized hydrogen carrier medium (Ox-LOHC); reducing the at least partially oxidized hydrogen carrier medium (Ox-LOHC) by catalytic hydrogenation in a hydrogenation reactor (21) to form the at least partially loaded hydrogen carrier medium (Hx-LOHC); and removing at least one oxygen-containing impurity from the at least partially loaded hydrogen carrier medium (Hx-LOHC) and / or from the at least partially oxidized hydrogen carrier medium (Ox-LOHC).

The application discloses a kind of multicomponent boride and preparation method thereof, belong to carbide ceramic technical field.The application uses multicomponent alloy bulk as raw material, after hydrogenation treatment is carried out to raw material, then using the method of organic carbon source coating obtains carbon-coated mixture, then carbon-coated mixture is mixed with boric acid and is dried before sintering to obtain multicomponent boride.The above preparation method can avoid the oxygen impurity brought by conventional metal powder as raw material, avoid multicomponent metal hydride and boric acid contact reaction to generate boride at high temperature, at the same time organic carbon source can reduce boron element in boric acid and diffuse into carbide lattice, and react with excess oxygen element to form CO / CO2 gas, no second phase oxide impurity is formed in boride, and only needs to be at relatively low temperature 800-1300 DEG C, complete carbonization, boronization process, greatly reduce process condition, it is favorable to scale production multicomponent boride.

The present application belongs to the technical field of electrochemical gas separation and purification, and particularly relates to a flat-plate solid oxide oxygen ion conductor membrane reactor, a preparation method and application, and is particularly suitable for removing trace oxygen impurities; the solid oxide oxygen ion conductor membrane reactor adopts LSGM electrolyte, and composite material BSCF-SDC is used as the cathode and the anode; the membrane reactor can realize high removal of trace oxygen in argon under the condition of 750-900 DEG C and 1-2.0 V, so that the oxygen content can be lower than 10 ppm; the membrane reactor has the advantages of low energy consumption, high stability, no secondary pollution and the like, and is suitable for preparation of high-purity argon in the fields of semiconductor manufacturing, metal smelting and the like.

The utility model discloses a hydrogen removal purification device and relates to the technical field of hydrogen purification. A hydrogen removal purification device comprises a gas purification device, a gas filtering device is fixedly installed on the left side of the gas purification device, and the top end of the gas purification device is communicated with a reaction device through a first communication valve. According to the hydrogen removal purification device, the gas purification device is arranged, ion impurities, grease and oxygen impurities in mixed gas can be removed through a deionization part, an adsorption part and a catalysis part in the purification box, and in the process of removing the impurities in the mixed gas, the impurities in the hydrogen mixed gas can be directly removed through reaction; therefore, the hydrogen purification efficiency is improved, the gas is pretreated before entering the reaction device, the purity of the hydrogen is improved, and a good foundation is provided for subsequent gas reaction.

The invention relates to the technical field of target material preparation, and provides an alloy target material preparation method which comprises the following steps: providing target material alloy powder; carrying out isostatic compaction treatment on the target alloy powder to form a biscuit; and surrounding the adsorbent sheet and / or the hydrogen storage material around the biscuit, and then carrying out first sintering treatment to obtain the alloy target material. According to the preparation method, the adsorbent sheet and / or the hydrogen storage material are / is adopted for assisting sintering, the adsorbent sheet can absorb impurities such as CO2 and N2 in the sintering environment, gas in air holes of a sintered body is promoted to be rapidly exhausted, and substance migration and shrinkage are promoted, so that the air holes and defects are greatly reduced, and the purity, density, component and structure uniformity of the alloy target material are improved. The hydrogen storage material releases hydrogen in the sintering process to consume O2 in the sintering environment, oxygen impurities are effectively inhibited, meanwhile, metal oxide of a sintered body is reduced to generate water vapor to be discharged, the oxygen content of the alloy target material is greatly reduced, and the problem that hydrogen cannot be directly fed into a conventional sintering furnace for sintering is solved.

The invention provides low-oxygen-content silicon nitride powder and a preparation method thereof, and belongs to the technical field of silicon nitride preparation. The preparation method comprises the following steps: by taking amine with a steric hindrance group as a raw material, synthesizing a nitrogen-loving and oxygen-phobic polysilazane precursor capable of resisting water decomposition and erosion; a precursor and a catalyst precursor are co-wrapped by PEG-PPG-PEG, so that excellent dispersity of final powder is preset, a catalyst is pre-embedded for a subsequent carbon removal step, and mild low-temperature curing is realized through supercritical ammonia; in the step-by-step pyrolysis process, the template is firstly removed to physically isolate particles, then the pre-buried catalyst is activated, and solid residual carbon is actively converted into gas to be removed; in the high-temperature crystallization stage, the rule that impurities are naturally segregated to particle surfaces is utilized, high-activity gas-phase chemical etching is assisted for surface treatment, solid oxygen impurities are converted into volatile gaseous products to be removed, and the low oxygen content of the final product is ensured.

The invention discloses a process control method for deeply removing hydrogen and oxygen impurities in molten steel in an RH (Ruhrstahl Heraeus) vacuum circulating degassing device. The process control method comprises the following steps that a steel ladle is pretreated to be continuously used for six times, the temperature of a refractory material is 1020 DEG C, the slag thickness of the steel ladle is smaller than the upper limit of 200mm, and the water content of a gunning material of a dip pipe is 0.03%. Alloy and raw and auxiliary materials used in the RH furnace are baked, the moisture content of the alloy is reduced, the moisture content of the alloy is smaller than or equal to 0.5%, and the moisture content of the raw and auxiliary materials is smaller than or equal to 1% according to the weight percentage; the alloy components are adjusted to be within an internal control range before the molten steel with the alloy components adjusted enters an RH furnace, it is guaranteed that component adjustment is reduced as much as possible in the RH vacuum treatment process so as to reduce the content of hydrogen brought into steel by the alloy, and multi-stage vacuum pump dynamic cooperative control is adopted for vacuum building. Argon consumption is reduced through flow reduction in the last stage, interference of temperature drop on the degassing process is avoided, and molten steel temperature fluctuation is smaller than or equal to + / -3 DEG C.

The invention relates to an electrolysis device, to a method for measuring the concentration of a gas component in an electrolysis device, to a computer program product, to the use of a measurer and to a simulation program product. The electrolysis device (10) comprises a separation membrane (16) for generating hydrogen (13) and oxygen (15) from water. The electrolysis device (10) has a first line (12) for discharging hydrogen (15) in the hydrogen fluid (17), in the region of which a measuring device (20) for detecting impurities (18), for example oxygen impurities, in the hydrogen fluid (17) is arranged. According to the invention, the measuring device (20) is designed to detect an acoustic characteristic variable in the hydrogen fluid (17). The invention also relates to a method (100) which can be used for determining the concentration (32) of the impurity (18) in the electrolysis device (10). The invention further relates to a computer program product (45) which can be used to carry out such a method (100) and to a simulation program product (60) which can be used to simulate the operating behavior of such an electrolysis device (10). The invention further relates to the use of a measuring device (20) in an electrolysis device (10), said measuring device being designed to measure the velocity (42) of sound in a mixed gas (11).

The present application relates to a kind of light-hydrogen-storage microgrid scheduling method considering electrolytic cell dynamic safety constraint, belong to microgrid scheduling technical field.A kind of light-hydrogen-storage microgrid scheduling method considering electrolytic cell dynamic safety constraint, comprising the following steps: dynamic operation experiment is carried out to AEL electrolytic cell and PEM electrolytic cell in microgrid, obtains hydrogen-oxygen impurity response characteristic, obtains the hydrogen-oxygen impurity proportion dynamic model of electrolytic cell;According to the operating characteristics of microgrid, construct scheduling model.The present application avoids the safety problem caused by hydrogen-oxygen impurity exceeding standard due to the lower limit of electrolytic cell power being given too low, and the problem that electrolytic cell power lower limit is given too high when electrolytic cell response capacity cannot be fully utilized;Avoid the power lower limit of AEL electrolytic cell and PEM electrolytic cell is constantly debugged;The hydrogen-oxygen impurity proportion of system can be limited according to different levels of safety demand, and the control degree of system safety is higher.

The application discloses a novel oxygen-reducing hot field, wherein an upper heat preservation barrel is arranged on a middle heat preservation barrel, and the upper heat preservation barrel and the middle heat preservation barrel are coaxially arranged; the inner diameter of the upper heat preservation barrel is the same as that of the middle heat preservation barrel; when the top of a crucible is arranged in the upper heat preservation barrel, a gap between the inner wall of the upper heat preservation barrel and the outer sidewall of the crucible forms a second airflow path, and a gap between the inner wall of the middle heat preservation barrel and the outer sidewall of the crucible forms a first airflow path. The upper heat preservation barrel and the lower heat preservation barrel are coaxially arranged and have the same inner diameter, so that the width of the first airflow path and the second airflow path formed during the lifting of the crucible is kept consistent, the airflow path is not narrowed, the argon flow is not blocked, the gas in the cavities of the upper heat preservation barrel and the lower heat preservation barrel is continuously and efficiently exchanged, the oxygen impurities volatilized from the crystal pulling liquid surface can be timely and sufficiently removed, the oxygen impurity content in the monocrystalline silicon is obviously reduced, and the quality of the monocrystalline silicon is improved.

The invention relates to a method for restoring and verifying a growth environment in a reaction cavity after maintenance of MOCVD (Metal Organic Chemical Vapor Deposition) equipment. The method comprises the following steps: introducing hydrogen into a reaction cavity of MOCVD (Metal Organic Chemical Vapor Deposition) equipment, respectively carrying out low-temperature baking, medium-temperature baking and high-temperature baking, and then introducing trimethylaluminum and special gas into the reaction cavity of the equipment, so that water oxygen molecules react with the trimethylaluminum. Trimethylaluminum, trimethyl gallium and special gas are introduced to form a heterojunction, and the elimination condition of water and oxygen impurities in the reaction cavity is verified according to the luminous intensity of the heterojunction. According to the recovery and verification method provided by the invention, water and oxygen impurities can be completely removed, and the recovery condition of the growth environment in the cavity can be verified.

The application belongs to the technical field of impurity monitoring, and discloses a source furnace silicon-oxygen impurity monitoring method and device, electronic equipment and storage medium, the method comprises the following steps: acquiring the real-time main source mass spectrum signal of the main source material and the real-time impurity original mass spectrum signal of the silicon-oxygen impurity in the source furnace heating process in real time, according to the real-time main source mass spectrum signal and the real-time impurity original mass spectrum signal, combining the initial main source mass spectrum signal of the main source material and the initial impurity mass spectrum signal of the silicon-oxygen impurity when the source furnace starts heating, the actual impurity signal of the silicon-oxygen impurity is calculated, based on the real-time main source mass spectrum signal and the actual impurity signal, the evaporation rate data of the main source material and the change trend information of the silicon-oxygen impurity are calculated respectively, to determine the dynamic early warning threshold, monitor the actual impurity signal, when the actual impurity signal is greater than or equal to the dynamic early warning threshold, it is determined that the release of the silicon-oxygen impurity is too high; through the above method, the production efficiency of the epitaxial film is improved.

To provide quantum sensors.SOLUTION: In one form of the present disclosure, a quantum sensor comprises a quantum device. The quantum device comprises gallium nitride (GaN) with a color center with a zero-phonon line (ZPL) between about 900 nanometers (nm) and about 990 nm. The GaN can be doped with silicon (Si) and have low carbon (C) and oxygen (O) impurity densities. In one example, the quantum device is GaN doped with about 1016 Si atoms per cm3, and having less than about 8×1015 C atoms per cm3 and less than about 6×1015 O atoms per cm3, and a Ga vacancy density less than about 1016 vacancies per cm3.SELECTED DRAWING: Figure 1

The embodiment of the invention relates to the technical field of binary compounds of nitrogen and metal, in particular to a method for controlling the content of carbon and oxygen impurities in nitride fuel and the nitride fuel. The invention provides a method for controlling the content of carbon and oxygen impurities in nitride fuel, which comprises the following steps: placing uranium dioxide powder in a reaction area, and introducing hydrogen to enable the molar ratio of oxygen to uranium in a reaction product to reach a preset value; mixing the reaction product with metal uranium powder and carbon powder to obtain a mixture; the mixture is placed in a nitriding area, nitrogen is input, temperature control and pressure control are conducted on the nitriding area, and the carbon content in the obtained nitride powder is reduced to a preset value; and mixing the nitride powder and the metal uranium powder, and then sintering, so that the oxygen content of the nitride fuel obtained by sintering is reduced to a preset value. The invention provides a nitride fuel. According to the method, the content of carbon and oxygen impurities in the nitride fuel can be accurately controlled, the high-purity nitride fuel is prepared, and the in-pile service performance of the nitride fuel can be improved.

The utility model discloses a kind of flow guide structure and single crystal furnace applied to single crystal furnace hot field.The flow guide structure can include: flow guide cylinder and flow guide component, wherein, flow guide component includes first flow guide part and second flow guide part, first flow guide part extends from the outer periphery of the lower end opening of flow guide cylinder in the direction of radial away from the central axis of flow guide cylinder and simultaneously downwardly inclined relative to the lower end opening outer periphery of flow guide cylinder, second flow guide part extends from the extension end of first flow guide part in the direction of radial away from the central axis of flow guide cylinder and simultaneously upwardly inclined relative to first flow guide part.The flow guide structure can accelerate the argon flow rate passing through liquid surface, to take away more oxygen impurities, reduce the oxygen content of drawn single crystal silicon rod.

The invention discloses a multi-component boron-containing carbide and a preparation method thereof, and belongs to the technical field of carbide ceramics. The preparation method comprises the following steps: by taking a multi-element alloy block as a raw material, hydrotreating the raw material, then adopting an organic carbon source coating method to obtain a carbon-coated mixture, then mixing the carbon-coated mixture with boric acid, drying, and sintering to obtain the multi-element boron-containing carbide. According to the preparation method, oxygen impurities brought by conventional metal powder serving as a raw material can be avoided, the situation that multi-element metal hydride and boric acid are in contact reaction at high temperature to generate boride is avoided, meanwhile, the organic carbon source can reduce boron in the boric acid and diffuse the boron into carbide crystal lattices, and the boron reacts with redundant oxygen elements to form CO / CO2 gas, so that the boron content in the boric acid is reduced. According to the method disclosed by the invention, a second-phase oxide impurity is not formed in the boron-containing carbide, and the carbonization and boronizing processes are completed only at a relatively low temperature of 800-1300 DEG C, so that the process conditions are greatly reduced, and large-scale production of the multi-element boron-containing carbide is facilitated.

The application provides a hydrogen selenide purification device and method, in particular to removal of trace oxygen, hydrogen and water impurities in hydrogen selenide, and relates to the technical field of electronic special gas purification. In the variable-temperature purifier A, hydrogen and oxygen impurities in the hydrogen selenide react to generate water under the action of a catalyst, so that the hydrogen and part of the oxygen are removed, and the reaction principle is: H2+1 / 2O2 Catalyst The oxygen impurities in the hydrogen selenide are removed in the variable-temperature purifier B, and the principle is: 2H2Se+O2=2H2O+Se.When the impurity water in the hydrogen selenide is overproof, the purification device further comprises a normal-temperature purifier C, and the second adsorbent in the normal-temperature purifier C is used to remove the water generated in the variable-temperature purifier and the impurity water carried by the hydrogen selenide itself. The method provided by the application can remove the oxygen, hydrogen and water impurities without rectification and low-temperature evacuation, and the process is safe and simple to operate.

The utility model provides a single crystal furnace thermal field, which is characterized in that a first electrode foot plate and a second electrode foot plate are respectively arranged at the bottom of an annular heating element and are positioned on two sides of the annular heating element, a main heater heats the upper part of a crucible, and the annular heating element is sleeved at the lower part of the crucible and heats the lower part of the crucible. According to the single crystal furnace thermal field, the main heater and the bottom heater are used for heating the crucible at the same time, and the temperature difference in the crucible can be effectively reduced, so that the convection of a silicon solution in the crucible is more uniform, the doping of oxygen impurities into a single crystal bar is reduced, and the quality of the single crystal bar is ensured. The heating area of the crucible can be effectively increased, the temperature difference in the crucible is reduced, convection of a silicon solution in the crucible can be more uniform, and the situation that oxygen impurities are doped into a single crystal bar is reduced.

A low-oxygen, small-size titanium alloy powder, its preparation method, and its applications. This invention belongs to the field of titanium alloy powder preparation. The purpose of this invention is to solve the technical problems of high cost and poor mechanical stability of existing rotating electrode powder preparation methods, which reduce powder particle size by increasing electrode rotation speed and electrode size. The method of this invention: A rotating electrode powder preparation method is used, with a radio frequency hydrogen plasma emitter as the heat source. The plasma arc is placed within a dynamic rotating magnetic field generated by two orthogonally arranged electromagnetic coils. After the consumable electrode reaches a preset rotation speed, the heat source is activated. After vacuuming, powder is prepared in an argon-hydrogen mixed atmosphere. The prepared powder is then subjected to high-temperature isothermal sintering under vacuum conditions to obtain low-oxygen, small-size titanium alloy powder. This method promotes fluid granulation and fine powder generation, effectively reduces the oxygen impurity content in the alloy powder, and results in lower cost, stronger mechanical stability, and lower impurity content.

The invention relates to a preparation method of high-purity calcium fluoride. The preparation method comprises the following steps: 1) heat treatment: carrying out first-stage heat treatment on a calcium fluoride raw material under inert gas protection or a vacuum environment; 2) deep deoxidation: introducing fluorine-containing gas into the calcium fluoride material obtained in the step 1) to carry out a second-stage thermal reaction; and 3) cooling and post-processing: stopping heating after the reaction is finished, and cooling the material to room temperature under the protection of inert gas atmosphere to obtain the product. According to the method, the strong oxidizing property of the fluorine-containing gas and the synergistic effect under high temperature and high pressure are utilized, oxygen impurities in calcium fluoride can be deeply removed, the oxygen content of the finally obtained high-purity calcium fluoride product is reduced to 18 ppm or below from about 356 ppm, and the requirement of the high-end optical field can be completely met.

The invention discloses a medical gas impurity removal system based on pressure swing adsorption, particularly relates to the technical field of gas separation and purification, and is used for solving the problem of how to construct a set of on-site oxygen production impurity control mechanism to enable produced gas to continuously meet limit values under fluctuation and aging working conditions without changing a hospital pipe network, so that the safety of the medical gas is ensured. And automatic isolation switching is carried out and traceable evidences are formed in case of abnormity. Through sequential linkage of six modules of air inlet pretreatment, segmented adsorption, on-line monitoring, self-adaptive control, health assessment and quality gate and tracing, stable removal of impurities such as moisture, carbon monoxide, carbon dioxide, nitrogen oxide, sulfur dioxide and oil mist under dynamic working conditions and adsorbent performance attenuation conditions is realized; when the impurity concentration is abnormal, gas production can be blocked in time, redundant gas supply is switched, it is ensured that oxygen entering a medical pipe network continuously meets the use requirement, and therefore the defects of an existing pressure swing adsorption oxygen production device in the aspects of impurity continuous control and gas supply compliance guarantee are overcome.