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High-thermal-conductivity silicon nitride ceramic and preparation method thereof

A silicon nitride ceramic, high thermal conductivity technology, applied in the field of ceramic material preparation, can solve the problem of low thermal conductivity of silicon nitride ceramics

Active Publication Date: 2019-11-22
FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, in view of the above content, the present invention provides a silicon nitride ceramic with high thermal conductivity and a preparation method thereof to solve the problem of low thermal conductivity of silicon nitride ceramics in the prior art

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  • High-thermal-conductivity silicon nitride ceramic and preparation method thereof

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Embodiment 1

[0021] A high thermal conductivity silicon nitride ceramic, in parts by weight, the silicon nitride ceramic is made of the following raw materials: 60 parts of silicon nitride, 8 parts of silicon carbide, 2 parts of yttrium chloride, and lanthanum chloride 1 part, 0.2 parts of ytterbium fluoride, 0.5 parts of zirconium nitride, and 5 parts of polyisobutenyl succinimide.

[0022] The preparation method of high thermal conductivity silicon nitride ceramic includes the following steps:

[0023] Step 1: Weigh 60 parts of silicon nitride, 8 parts of silicon carbide, 2 parts of yttrium chloride, 1 part of lanthanum chloride, 0.2 parts of ytterbium fluoride, 0.5 parts of zirconium nitride, and polyisobutenyl butadiene by weight. Mix 5 parts of imide to obtain mixed raw materials;

[0024] Step 2: Add the mixed raw materials obtained in Step 1 and 45 parts of isopropanol to the ball mill for the first grinding and crushing. After 15 hours of grinding and crushing, the mixed raw materials ar...

Embodiment 2

[0028] A silicon nitride ceramic with high thermal conductivity, in parts by weight, the silicon nitride ceramic is made of the following raw materials: 75 parts of silicon nitride, 10 parts of silicon carbide, 3 parts of gadolinium chloride, and terbium chloride 1 part, 0.6 parts of ytterbium fluoride, 1 part of zirconium nitride, 8 parts of polyethylene oxide.

[0029] The preparation method of high thermal conductivity silicon nitride ceramic includes the following steps:

[0030] Step 1: Weigh 75 parts of silicon nitride, 10 parts of silicon carbide, 3 parts of gadolinium chloride, 1 part of terbium chloride, 0.6 parts of ytterbium fluoride, 1 part of zirconium nitride, and 8 parts of polyethylene oxide by weight. To mix, get mixed raw materials;

[0031] Step 2: Add the mixed raw materials obtained in Step 1 and 52 parts of isopropanol to the ball mill for the first grinding and crushing. After 16 hours of grinding and crushing, the mixed raw materials are dried and the dried m...

Embodiment 3

[0035] A silicon nitride ceramic with high thermal conductivity, in parts by weight, the silicon nitride ceramic is made of the following raw material components: 90 parts of silicon nitride, 12 parts of silicon carbide, 3 parts of ytterbium chloride, and lutetium chloride 2 parts, 1 part of ytterbium fluoride, 2 parts of zirconium nitride, and 10 parts of polyethylene wax.

[0036] The preparation method of high thermal conductivity silicon nitride ceramic includes the following steps:

[0037] Step 1: Weigh 90 parts of silicon nitride, 12 parts of silicon carbide, 3 parts of ytterbium chloride, 2 parts of lutetium chloride, 1 part of ytterbium fluoride, 2 parts of zirconium nitride, and 10 parts of polyethylene wax by weight To mix, get mixed raw materials;

[0038] Step 2: Add the mixed raw materials obtained in Step 1 and 60 parts of isopropanol to the ball mill for the first grinding and crushing. After 18 hours of grinding and crushing, the mixed raw materials are dried and th...

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Abstract

The invention relates to the technical field of ceramic material preparation, provides high-thermal-conductivity silicon nitride ceramic and a preparation method thereof, and solves the problem of lowthermal conductivity of silicon nitride ceramic in the prior art. The silicon nitride ceramic comprises the following components in parts by weight: 60-90 parts of silicon nitride, 8-12 parts of silicon carbide, 3-5 parts of rare earth chloride, 0.2-1 part of ytterbium fluoride, 0.5-2 parts of zirconium nitride and 5-10 parts of dispersing agent. According to the preparation method, the rare earth chloride is added, so that the sintering activity of the silicon nitride powder is improved under the condition of not additionally introducing oxygen, and densification of the silicon nitride ceramic is realized; the ytterbium fluoride can promote diffusion of Si and N and react with oxygen impurities in silicon nitride crystal lattices, so that the content of dissolved oxygen in the silicon nitride crystal lattices is effectively reduced, and the heat conductivity of silicon nitride is improved; zirconium ions in the zirconium nitride have strong affinity to oxygen and can absorb part of oxygen impurities in crystal lattices. Rare earth chloride, ytterbium fluoride and zirconium nitride are matched with one another, the size of silicon nitride grains can be increased, and oxygen impurities can be discharged.

Description

Technical field [0001] The invention relates to the technical field of ceramic material preparation, in particular to a high thermal conductivity silicon nitride ceramic and a preparation method thereof. Background technique [0002] As a long-researched structural material, silicon nitride ceramic has excellent properties such as high strength, high toughness, corrosion resistance, high temperature resistance, oxidation resistance, low specific gravity and thermal shock resistance. It is widely used in machinery, chemical industry, marine engineering, and armor. Important fields such as protection and aerospace. In the past, it was generally believed that silicon nitride ceramics did not have high thermal conductivity, and the thermal conductivity of products such as silicon nitride bearing balls and structural parts was generally only 15-30W·m -1 ·K -1 . Until 1995, Haggerty calculated from the classical solid transport theory and found that the thermal conductivity of silicon...

Claims

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Application Information

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IPC IPC(8): C04B35/584C04B35/622C04B35/64
CPCC04B35/584C04B35/622C04B35/64C04B2235/3826C04B2235/3886C04B2235/444C04B2235/667
Inventor 杨大胜施纯锡
Owner FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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