3 results about "Ytterbium fluoride" patented technology

Provided are a design method and a preparation method of a ZnSe substrate 2-5.5 μm high-transmittance thin film. The design method of the ZnSe substrate 2-5.5 μm high-transmittance thin film comprises the following steps: Sa, a film system is designed with 550 nm as a reference wavelength for optical thin film design, and a film stack formula Sub / 0.6(LHL)^2MK / AIR is used, and the film system is plated on both surfaces of the substrate; wherein, Sub is a ZnSe substrate, and AIR represents air, and in the film stack expression: H represents a 1 / 4 wavelength thickness of a high-refractive-index material ZnSe (zinc selenide), L represents a 1 / 4 wavelength thickness of a low-refractive-index material YbF3 (ytterbium fluoride), K represents a 1 / 4 wavelength thickness of a protective layer material Al2O3 (aluminum oxide), and M represents a 1 / 4 wavelength thickness of a connecting layer material Y2O3 (yttrium oxide); Sb, a film layer structure of Sub / YbF3 / ZnSe / YbF3 / ZnSe / YbF3 / Y2O3 / Al2O3 / Air is generated through the input film stack formula; Sc, the film layer thickness is optimized through a thin film design software, and the best film layer thickness is obtained, and the transmittance of the optimized film layer structure reaches a target in a 2-5.5 μm wave band; and Sd, the optimized best film layer thickness is input into a control computer of a film plating machine.

The application belongs to the technical field of infrared coating and discloses a high-durability antireflection film for chalcogenide glass in the 3-5 mu m infrared band, which comprises a film system structure symmetrically arranged on both sides of a chalcogenide glass substrate, wherein the film system structure comprises, in sequence from the inside to the outside of the chalcogenide glass substrate, a first germanium layer, a first zinc sulfide layer, a second germanium layer, a second zinc sulfide layer, a third germanium layer, a third zinc sulfide layer, a ytterbium fluoride layer, a fourth zinc sulfide layer and a lanthanum fluoride layer. The film system structure is arranged on the chalcogenide glass substrate to improve the wear resistance, corrosion resistance and transmittance of the lens.

The application provides a low-absorption long-wave infrared polarizer and a manufacturing method thereof, the polarizer comprising a zinc sulfide and ytterbium fluoride film, a high-resistance silicon substrate, a silicon grating, and a double-layer gold film, the double-layer gold film being respectively covered on the bottom of the dielectric grating groove and the top of the grating line, since the refractive index of the zinc sulfide is lower than that of silicon and the zinc sulfide has no absorption, the filling layer can improve the transmittance of TM polarized light, meanwhile, since the zinc sulfide film belongs to a hard film, the gold film can be greatly protected, and the robustness of the polarizer is improved, ytterbium fluoride and zinc sulfide films are plated on the back side of the packaged grating, according to the optical absorption characteristics of the plating film material, the antireflection film design is optimized, and the transmittance can be further improved, the application solves the inherent absorption problem of 9um of the polarizer with a silicon substrate at home and abroad, further improves the absorption of the polarizer after 10um, and improves the stability of the polarizer while ensuring high extinction ratio and high transmittance.