10 results about "Ytterbium fluoride" patented technology

The invention relates to a dual-band anti-reflection zinc selenide metallized light window and a preparation method thereof, the dual-band anti-reflection zinc selenide metallized light window comprises a front film system, a zinc selenide substrate, a back film system and edge metallized films, the zinc selenide substrate is located between the front film system and the back film system, and the edge metallized films are located at two ends of the zinc selenide substrate; the front film system and the back film system are formed by alternately overlapping zinc sulfide layers and ytterbium fluoride film layers; the edge metallized film is formed by overlapping a chromium film layer, a copper film layer, a nickel film layer and a gold film layer. According to the invention, the two sides of the zinc selenide substrate are respectively provided with an anti-reflection film system structure, so that the light energy of two wave bands of 3500-5000nm and 8000-12000nm is improved; the zinc sulfide and ytterbium fluoride film layer is adopted, so that the stress is lower, and the dual-band anti-reflection optimization effect is better; by improving the edge metallized film stacking structure, the problem that the soft optical material and the metallized film are not firmly combined is solved, and a new scheme is provided for infrared detector welding.

The invention discloses a near-net-shape preparation process of high-light-transmittance large-size magnesium aluminate spinel ceramic, and belongs to the technical field of preparation of high-performance transparent ceramic. The process comprises the following steps: firstly, mixing magnesium aluminate spinel raw material powder with a lithium-free composite sintering aid according to a mass ratio, wherein the composite sintering aid consists of magnesium fluoride, ytterbium fluoride and ytterbium oxide according to a molar ratio; performing cold isostatic pressing on the mixed powder to prepare a preformed blank, crushing, and performing high-low pressure circulation pressurization near-net forming. The obtained green body is firstly subjected to hot pressing and presintering, then placed in a fluorine-containing atmosphere to be treated and finally subjected to hot isostatic pressing sintering, and a finished product is obtained through aftertreatment. According to the technology, the bottleneck of large-size component preparation is successfully overcome, net forming of the magnesium aluminate spinel ceramic with the diagonal size larger than 400 mm is achieved, the light transmittance of a finished product in the wavelength range of 400 nm to 800 nm exceeds 93%, the breaking strength reaches 194 MPa or above, and meanwhile the raw material cost and equipment dependence are remarkably reduced.

Provided are a design method and a preparation method of a ZnSe substrate 2-5.5 μm high-transmittance thin film. The design method of the ZnSe substrate 2-5.5 μm high-transmittance thin film comprises the following steps: Sa, a film system is designed with 550 nm as a reference wavelength for optical thin film design, and a film stack formula Sub / 0.6(LHL)^2MK / AIR is used, and the film system is plated on both surfaces of the substrate; wherein, Sub is a ZnSe substrate, and AIR represents air, and in the film stack expression: H represents a 1 / 4 wavelength thickness of a high-refractive-index material ZnSe (zinc selenide), L represents a 1 / 4 wavelength thickness of a low-refractive-index material YbF3 (ytterbium fluoride), K represents a 1 / 4 wavelength thickness of a protective layer material Al2O3 (aluminum oxide), and M represents a 1 / 4 wavelength thickness of a connecting layer material Y2O3 (yttrium oxide); Sb, a film layer structure of Sub / YbF3 / ZnSe / YbF3 / ZnSe / YbF3 / Y2O3 / Al2O3 / Air is generated through the input film stack formula; Sc, the film layer thickness is optimized through a thin film design software, and the best film layer thickness is obtained, and the transmittance of the optimized film layer structure reaches a target in a 2-5.5 μm wave band; and Sd, the optimized best film layer thickness is input into a control computer of a film plating machine.

The application discloses a near-net forming preparation process of high-transmittance large-size magnesium-aluminum spinel ceramics, and belongs to the technical field of preparation of high-performance transparent ceramics. The process is characterized by the following steps: firstly, magnesium-aluminum spinel raw material powder is mixed with lithium-free composite sintering additives according to a mass ratio; the composite sintering additives are composed of magnesium fluoride, ytterbium fluoride and ytterbium oxide in a molar ratio; the mixed powder is cold isostatic pressed into a preform; after being crushed, the preform is subjected to high-low pressure cycle pressing near-net forming; the obtained blank is first hot-pressed and pre-sintered, then is treated in a fluorine-containing atmosphere, and finally is subjected to hot isostatic pressing sintering; and finally, the finished product is obtained through post-processing. The process successfully overcomes the bottleneck in the preparation of large-size components, realizes the net forming of the magnesium-aluminum spinel ceramic with a diagonal size greater than 400 mm, the transmittance of the finished product is more than 93% in the wavelength range of 400 nm to 800 nm, the bending strength is more than 194 MPa, and the raw material cost and equipment dependence are significantly reduced.

The application belongs to the technical field of glass-ceramics material, and provides high-strength glass-ceramics and a preparation method thereof, the glass-ceramics comprises the following raw materials in parts by weight: 48-60 parts of silicon oxide, 5-8 parts of calcium oxide, 8-12 parts of aluminum oxide, 4-6 parts of diaphosphorus pentoxide, 3-5 parts of zirconium oxide, 5-7 parts of lithium oxide, 1-3 parts of titanium oxide, 0.01-0.04 parts of potassium oxide, 0.01-0.02 parts of tin dioxide, 0.005-0.01 parts of sodium fluoride, 0.005-0.01 parts of ytterbium fluoride, 0.001-0.005 parts of a clarifying agent and 0.01-0.1 parts of a colorant. The glass-ceramics has high strength and impact strength, is not prone to thermal expansion or thermal deformation, and can be widely applied in the fields of optical devices, electronic display and the like.

This invention discloses a rare-earth metal fluoride superionic conductor dielectric film and its preparation method. The dielectric film is prepared from a rare-earth metal fluoride superionic conductor using a thermal evaporation method. The rare-earth metal fluoride superionic conductor is selected from scandium fluoride, yttrium fluoride, lanthanum fluoride, cerium fluoride, neodymium fluoride, samarium fluoride, europium fluoride, gadolinium fluoride, holmium fluoride, erbium fluoride, ytterbium fluoride, praseodymium fluoride, promethium fluoride, terbium fluoride, dysprosium fluoride, thulium fluoride, and lutetium fluoride. This invention utilizes thermal evaporation to heat and evaporate the rare-earth metal fluoride source material into a gaseous state within an evaporation system. The gaseous fluoride directly adheres to a substrate placed above the source material and recrystallizes. This allows for controllable thickness and defect number of the rare-earth metal fluoride, resulting in high integration. Therefore, rare-earth metal fluoride superionic conductor dielectric materials show great potential in the design and manufacture of novel functional devices.

The present invention discloses a wide-spectrum infrared transmission filter window that cuts off ultraviolet and visible light. The window substrate is a zinc selenide crystal, and a broadband cutoff film is designed on one side of the substrate. The main film system adopts a long-wave filter-type film structure, with zinc selenide and ytterbium fluoride as high and low refractive index materials, respectively. Two cutoff film stacks are used to achieve broadband cutoff, and matching layers are added at both ends of the main film system. The infrared band transmittance is improved by optimizing the matching layers; a wide-spectrum anti-reflection film is designed on the other side of the substrate. The optical thin film preparation process of the filter window adopts appropriate deposition temperature, deposition rate, and ion-assisted deposition processes. The window can prevent light in a wide band of 0.20μm to 0.80μm from passing through, and allows light in a wide band of 0.92μm to 15.50μm to pass through and reach the infrared detector response area through the subsequent optical path. The filter window of the present invention has stable performance and good reliability, and is suitable for spectral selection in infrared imaging systems.

The invention belongs to the technical field of photoelectric detection and sensing and infrared imaging, and relates to a high-hardness antireflection film window processing method applied to an atmospheric infrared window wave band. Comprising the following steps: selecting a zinc selenide infrared crystal as a window material, selecting zinc selenide, ytterbium fluoride, zirconium oxide and diamond-like carbon as optical thin film materials, designing a film system structure, and respectively completing plating of a first surface film system structure and a second surface film system structure and finished product detection by adopting a vacuum coating mode. Compared with the prior art, the surface hardness, corrosion resistance, adhesion resistance and infrared band transmittance of the infrared crystal window are improved, the infrared crystal window has excellent infrared spectrum transmission performance and environmental adaptability, the service life of the infrared crystal window is prolonged, long-term stable operation of an infrared detection system is guaranteed, and the service life of the infrared detection system is prolonged. And a solid foundation is provided for iteration upgrading of infrared detection and infrared imaging equipment.

The application belongs to the technical field of infrared coating and discloses a high-durability antireflection film for chalcogenide glass in the 3-5 mu m infrared band, which comprises a film system structure symmetrically arranged on both sides of a chalcogenide glass substrate, wherein the film system structure comprises, in sequence from the inside to the outside of the chalcogenide glass substrate, a first germanium layer, a first zinc sulfide layer, a second germanium layer, a second zinc sulfide layer, a third germanium layer, a third zinc sulfide layer, a ytterbium fluoride layer, a fourth zinc sulfide layer and a lanthanum fluoride layer. The film system structure is arranged on the chalcogenide glass substrate to improve the wear resistance, corrosion resistance and transmittance of the lens.

The application provides a low-absorption long-wave infrared polarizer and a manufacturing method thereof, the polarizer comprising a zinc sulfide and ytterbium fluoride film, a high-resistance silicon substrate, a silicon grating, and a double-layer gold film, the double-layer gold film being respectively covered on the bottom of the dielectric grating groove and the top of the grating line, since the refractive index of the zinc sulfide is lower than that of silicon and the zinc sulfide has no absorption, the filling layer can improve the transmittance of TM polarized light, meanwhile, since the zinc sulfide film belongs to a hard film, the gold film can be greatly protected, and the robustness of the polarizer is improved, ytterbium fluoride and zinc sulfide films are plated on the back side of the packaged grating, according to the optical absorption characteristics of the plating film material, the antireflection film design is optimized, and the transmittance can be further improved, the application solves the inherent absorption problem of 9um of the polarizer with a silicon substrate at home and abroad, further improves the absorption of the polarizer after 10um, and improves the stability of the polarizer while ensuring high extinction ratio and high transmittance.