The invention provides a design method and a preparation method of a 2-5.5 [mu] m high-
transmittance film on a ZnSe substrate. The design method of the ZnSe substrate 2-5.5 [mu] m high-
transmittance film comprises the following steps: Sa, film
system design: 550 nm is used as a reference
wavelength for
optical film design, a film stack formula: Sub / 0.6 (LHL) 2MK / AIR is used, two sides of Sub are plated with the same film
system, Sub is a ZnSe substrate, AIR represents air, in the film stack expression, H represents a high-refractive-index material ZnSe (
zinc selenide) with the
wavelength thickness of 1 / 4, L represents a low-refractive-index material YbF3 (
ytterbium fluoride) with the
wavelength thickness of 1 / 4, and the thickness of YbF3 is 1 / 4. K represents a protective layer material Al2O3 (aluminum
oxide) with the wavelength thickness of 1 / 4, and M represents a connecting layer material Y2O3 (
yttrium oxide) with the wavelength thickness of 1 / 4; sb, generating a film layer structure of Sub / YbF3 / ZnSe / YbF3 / ZnSe / YbF3 / Y2O3 / Al2O3 / Air according to an input film stack formula; sc, the thickness of the film layer is optimized through thin film
design software, the optimal thickness of the film layer is obtained, and the
transmittance of the optimized film layer structure at the
wave band of 2-5.5 microns reaches the target; and Sd, inputting the optimized optimal film thickness into a control computer of the
coating machine.