Method for removing oxygen impurities in polysilicon through electron beam continuous melting, and apparatus thereof
An electron beam smelting furnace and polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve problems such as high risk, difficult operation, poor oxygen removal effect, etc., and achieve high yield and improved Production efficiency and the effect of improving photoelectric conversion efficiency
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Embodiment 1
[0027] Such as figure 1 As shown, a device for removing oxygen impurities in polysilicon by continuous electron beam smelting includes a furnace body 1, the upper part of the furnace body 1 communicates with the upper furnace cover, and a feeding mechanism 2 and an electron gun 3 are installed. The feeding mechanism 2 located in the furnace body 1 A smelting crucible 4 is provided below the feeding port, and a turning mechanism 5 is arranged at the bottom of the smelting crucible 4. The turning mechanism 5 communicates with the lower furnace cover, and a loading crucible 6 is arranged on one side of the turning mechanism in the furnace body 1.
[0028] Wherein, the melting crucible 4 is a water-cooled copper crucible with a concave melting pool. Since the energy of the electron beam melting is very high, it can easily penetrate the non-metallic crucible, so the metal copper is used as the material and the melting crucible 4 is water-cooled.
[0029] The loading crucible 6 is ...
Embodiment 2
[0031] Adopt the device of embodiment 1, carry out electron beam continuous smelting and remove oxygen impurity in polysilicon, carry out according to the following method:
[0032] (1) Material preparation: put the deoxidized polysilicon material with an oxygen content of 4-8ppmw and a particle size of 10-30mm into the feeding mechanism 2 in the electron beam melting furnace after cleaning and drying;
[0033](2) Pretreatment: Turn on the cooling water circulation of the electron beam melting furnace, vacuumize the electron beam melting furnace to below 0.05Pa; vacuumize the electron gun 3 to below 0.005Pa, and then preheat, After preheating the electron gun 3 for 10 minutes, turn off the preheating;
[0034] (3) Smelting and purification: start the feeding mechanism 2, and continuously feed materials into the melting crucible 4, when the carrying capacity in the melting crucible 4 reaches 1 / 4, close the feeding mechanism; start the electron gun 3, set the beam current of the...
Embodiment 3
[0037] Adopt the device of embodiment 1, carry out electron beam continuous smelting and remove oxygen impurity in polysilicon, carry out according to the following method:
[0038] (1) Material preparation: put the deoxidized polysilicon material with an oxygen content of 4-8ppmw and a particle size of 10-30mm into the feeding mechanism 2 in the electron beam melting furnace after cleaning and drying;
[0039] (2) Pretreatment: Turn on the cooling water circulation of the electron beam melting furnace, vacuumize the electron beam melting furnace to below 0.05Pa; vacuumize the electron gun 3 to below 0.005Pa, and then preheat, After preheating the electron gun 3 for 15 minutes, turn off the preheating;
[0040] (3) Smelting and purification: start the feeding mechanism 2, and continue to feed materials into the melting crucible 4, when the load capacity in the melting crucible 4 reaches 1 / 3, close the feeding mechanism; start the electron gun 3, set the beam current of the ele...
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