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Growing method of high-crystal quality high-resistance GaN epitaxial layer

A growth method and epitaxial growth technology, which are applied in the field of growing high-resistance GaN epitaxial layers, can solve problems affecting device performance, high dislocation density of high-resistance GaN epitaxial layers, strong electron scattering, etc., to increase stability and reliability, The effect of reducing the content of oxygen impurities and increasing the degree of freedom

Inactive Publication Date: 2010-10-27
江苏华功半导体有限公司
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Problems solved by technology

But at present, based on the conventional "two-step method" to apply this method, the dislocation density in the grown high-resistance GaN epitaxial layer is very high, which will inevitably cause strong scattering of channel electrons in the further grown device structure, Seriously affect the improvement of device performance, and use this method to prepare high-resistance GaN, its repeatability and reliability face challenges in practical applications

Method used

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  • Growing method of high-crystal quality high-resistance GaN epitaxial layer
  • Growing method of high-crystal quality high-resistance GaN epitaxial layer
  • Growing method of high-crystal quality high-resistance GaN epitaxial layer

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Embodiment 1

[0040] For the growth of GaN epitaxial layer with high crystal quality and high resistance, 3 batches of samples were prepared according to the following conditions, showing the optimization process of "AlN pretreatment". In addition, 1 batch of samples was prepared according to the conventional conditions (ie, the following 2) and 3) steps were omitted):

[0041] 1) Use MOCVD equipment (3×2”Thomas Swan Close Coupled Showerhead MOCVD), the substrate is a sapphire substrate on the (0001) plane, and the H 2 , the reaction chamber pressure is 300Torr, bake at 1090°C for 5min, and clean the substrate;

[0042] 2) Cool down to 630°C, feed trimethylaluminum and ammonia gas, H 2 as a carrier gas. The reaction chamber pressure is 60Torr, low-temperature AlN is grown, and the growth thicknesses are 10, 16, and 28nm respectively.

[0043] 3) Keep the pressure of the reaction chamber at 60 Torr, stop feeding trimethylaluminum, continue feeding ammonia gas, raise the temperature to 1100...

Embodiment 2

[0053] High crystal quality and high resistance GaN epitaxial layer growth, keeping the AlN growth conditions unchanged, changing the AlN annealing time, and preparing two furnace samples:

[0054] 1) Use MOCVD equipment (3×2”Thomas Swan Close Coupled Showerhead MOCVD), the substrate is a sapphire substrate on the (0001) plane, and the H 2 , the reaction chamber pressure is 300Torr, bake at 1090°C for 5min, and clean the substrate;

[0055] 2) Cool down to 680°C, feed trimethylaluminum and ammonia, H 2 as a carrier gas. The pressure of the reaction chamber is 75 Torr, the low-temperature AlN is grown, and the growth thickness is 25 nm.

[0056] 3) Stop feeding trimethylaluminum, continue feeding ammonia gas, adjust the pressure of the reaction chamber to 100 Torr, raise the temperature to 1110° C. in 240 seconds, and set the annealing time to 100 and 800 seconds respectively.

[0057] 4) Cool down to 530°C, feed trimethylgallium and ammonia gas, H 2 as a carrier gas. The ...

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Abstract

The invention relates to a method for growing a high-crystal quality high-resistance GaN epitaxial layer, which reduces the concentration of oxygen impurities in GaN and reduces background electron concentration which needs to be compensated via pre-depositing low-temperature AlN on a sapphire substrate and carrying out annealing treatment (AlN pretreatment for short), so the high-resistance GaN epitaxial layer can be obtained only by introducing less edge dislocation into the GaN epitaxial layer for compensation. The resistivity of the high-resistance GaN epitaxial layer prepared by the method is greatly larger than 107 ohm. cm at room temperature, the surface roughness (RMS) of 3 mu m x 3 mu m area reaches 0.2-0.3 nm, and the surface is smooth; the full width at half maximum of X-ray diffraction ohm scanning (102) swing curve can be controlled to about 600 arc sec, and the dislocation density is 40-50% lower than that in conventional edge dislocation compensation high-resistance GaN; and the high-resistance GaN growth technology has excellent repeatability, and meets industrial application requirements. The method is simple, and does not cause any pollution on the MOCVD system.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for growing a high-resistance GaN epitaxial layer. Background technique [0002] With its excellent physical and chemical properties, GaN-based wide-bandgap semiconductor materials not only have important applications in short-wavelength light-emitting devices (light-emitting diodes (LEDs), lasers (LDs)) and detectors, but also in the development of high-temperature, high-frequency, large-scale There are also important applications in power microwave electronic devices. Due to the strong polarization electric field effect, in Al x Ga 1-x A high concentration of high-mobility two-dimensional electron gas is generated in the N / GaN heterostructure, so GaN-based high-mobility transistors (HEMTs) based on this heterostructure have great advantages in microwave power device applications. [0003] Due to the application of non-high resistance GaN in GaN-based HEMT d...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/02C30B25/02C30B25/18
Inventor 许福军沈波苗振林宋杰王新强唐宁杨志坚张国义
Owner 江苏华功半导体有限公司
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