39 results about "Hydrogen impurity" patented technology

A system for the purification and recycle of impure argon is disclosed herein. The system of the present invention can produce very high purity argon, i.e., about 1 ppb or less of impurities. In one embodiment, a cryogenic separation apparatus is used to remove the nitrogen, hydrocarbon, and hydrogen impurities from the argon stream. A catalyst bed is then operated at ambient temperature to remove hydrogen, oxygen, and carbon monoxide impurities to provide the purified argon product.

The invention relates to the field of fine chemical industry, and in particular relates to a preparation method of high-purity hydrogen chloride. Compared with the prior art, the preparation method ofthe high-purity hydrogen chloride uses a styrene / ionic liquid high-crosslinking adsorbent which has a better effect of adsorbing hydrogen chloride impurities, and effectively reduces the impurity content of product gas; moreover, a deep separation type gas purifier is added, and tests show that the water content of the prepared high-purity hydrogen chloride can be reduced to 100 ppb or less and the gas impurities can be reduced to 50 ppb or less; moreover, compared with the prior separation type gas filter technology, the process is enlarged, the flow rate can reach 400 standard liters / minuteat the highest, and the production efficiency is greatly improved.

The invention provides a tail gas recovery treatment and cyclic utilization device for an annealing furnace. The tail gas recovery treatment and cyclic utilization device comprises a tail gas recoverypipeline, a primary pressurizing system, a tail gas pretreatment system, a secondary pressurizing system, an oxygen removing device, a water pre-removing system, an adsorbing and drying system, a first pressure adjusting device and a PLC which are sequentially connected, wherein the PLC is in signal connection with the electric power. Tail gas is connected into an annealing furnace protecting gasinput main pipe after being connected with the first pressure adjusting device through the adsorbing and drying system. The treated tail gas is used by the zinc plating line annealing furnace in a cyclic manner. According to the treatment technology, after the tail gas generated by the furnace system passes through a cooler, most oil dirt is treated; then the tail gas enters the tail gas pretreatment system through the primary pressurizing system, so that oil dirt, dust, residual ammonia and carbureted hydrogen impurity in the tail gas are removed, and the tail gas enters the secondary pressurizing system, so that oxygen is removed; then the tail gas enters the water pre-removing system, so that water is separated out; the adsorbing and drying system carries out depth water removing and impurity gas removing, finally, the first pressure adjusting device adjusts pressure, the tail gas is fed into the zinc plating line continuous annealing furnace, cyclic utilization is achieved, and the device saves energy and is environmentally friendly.

The invention discloses an automatic purging and replacing system and method for a hydrogen-related pipe valve testing gas circuit structure. The system comprises a purging gas source, a purging and replacing pipeline used for feeding purging gas into a main pipeline and a testing pipeline, and a PLC control unit; the purging and replacing pipeline comprises a purging inlet, a pneumatic valve and a one-way valve, which are sequentially connected through corresponding pipelines; the purging inlet is connected with the corresponding purging gas source; before testing or debugging of a pipe valve, all stop valves in a tested pipeline structure are opened, and corresponding centralized diffusion pipelines are communicated; after the purging inlet communicates with the purging gas source, the pneumatic valve is opened to release purging gasflow for pipeline purging; and after purging is completed, all the stop valves are closed, the pipe valve to be tested is connected with a mounting piece to be arranged in the corresponding tested pipeline, and subsequent testing or debugging is carried out. The system is simple in structure, practical and low in use cost; and according to the method, residual hydrogen, impurities and waste in the tested pipeline can be effectively purged and cleaned in time, potential safety hazards are eliminated, and the accuracy and reliability of a test result are improved.

The present invention is generally directed to a method of making chalcogenide glasses including holding the melt in a vertical furnace to promote homogenization and mixing; slow cooling the melt at less than 10° C. per minute; and sequentially quenching the melt from the top down in a controlled manner. Additionally, the present invention provides for the materials produced by such method. The present invention is also directed to a process for removing oxygen and hydrogen impurities from chalcogenide glass components using dynamic distillation.

The invention provides a method for removing H2 impurities in CO feed gas by using a three-stage catalyst filling method. According to the change trend of the concentrations of reactants and productsin the whole catalyst bed layer and the difference of reaction heat effects, three catalysts with specific chemical structures and properties are designed and selected, the three catalysts are packedin different concentration intervals of a reaction bed layer according to a specific sequence and specific proportions, and reaction heat effect and a side reaction rate are synergistically controlledby utilizing respective chemical properties of the three catalysts. According to the method for removing H2 impurities in CO feed gas by using the three-stage catalyst filling method in the invention, on the basis that catalyst preparation cost and process equipment cost are not increased, the reaction temperature of the catalyst is reduced to 125-130 DEG C from 145-150 DEG C in the prior art, soenergy consumption can be substantially reduced, the thermal sintering risk of the catalyst is reduced, and the service life and the replacement period of the industrial catalyst can be easily prolonged; and the method has large-scale industrial application prospects.

Embodiments herein provide for radical based treatment of silicon nitride layers deposited using a flowable chemical vapor deposition (FCVD) process. Radical based treatment of the FCVD deposited silicon nitride layers desirably increases the number of stable Si-N bonds therein, removes undesirably hydrogen impurities therefrom, and desirably provides for further crosslinking, densification, and nitridation (nitrogen incorporation) in the resulting silicon nitride layer. In one embodiment, a method of forming a silicon nitride layer includes positioning a substrate on a substrate support disposed in the processing volume of a processing chamber and treating a silicon nitride layer deposited on the substrate. Treating the silicon nitride layer includes flowing one or more radical species ofa first gas comprising NH3, N2, H2, Ar, He, or combinations thereof and exposing a silicon nitride layer to the radical species.

The storing and destocking of hydrogen in a hydride tank (10) comprises purification performed in at least one trap (1, 1A, 1B) filtering the impurities contained in the hydrogen entering the tank to be stored and regeneration of said at least one trap, using the heat carried by the hydrogen exiting the tank after it has been destocked.

The invention discloses a method for removing an H2 impurity from CO raw gas through selective oxidation of NO. According to the method, NO completely or partially replaces O2 to serve as an oxidizing agent, and the H2 impurity in the CO raw gas can be removed through a selective oxidation reaction. The technical method comprises two stages of dehydrogenation processes, two catalysts with different ingredients and different effects are adopted for driving respectively, by means of layered dehydrogenation, the proportion of No, N2O and O2 in tail gas can be controlled flexibly, an operator performs specific adjustment conveniently according to the requirement of a follow-up CO synthetic process for raw gas composition, the whole process has higher efficiency and operability, and the problems of excessive O2 in the original dehydrogenation process, proneness of nitrite to decomposition in the follow-up CO synthetic process and the like are solved. The method can be applied to dehydrogenation purification of CO raw gas for synthesis of oxalate, carbonate and ethylene glycol.

A method for the hydrogenation of alkyl anthraquinone, characterized in that the method comprises contacting an alkyl anthraquinone working solution with hydrogen in the presence of a hydrogenation catalyst; it is characterized in that the hydrogenation catalyst is activated alumina modified with phosphorus as The carrier, with palladium and ruthenium as the main active components, and one or more selected from silver, copper, cobalt, lanthanum, cerium, manganese, iron and nickel as auxiliary active components, in the described phosphor modified In the activated alumina carrier, the mass content of the phosphorus in the carrier is 0.1~30%; the mass content of the palladium and ruthenium in the catalyst is 0.01~10% and the mass ratio of palladium and ruthenium is 0.2~30% 6:1; the mass content of the auxiliary active component in the catalyst is 0-8%. The method of the invention does not have strict requirements on the content of hydrogen impurities such as CO, and the catalyst has a longer service life.

The present invention discloses an apparatus and a method for removing hydrogen impurities in a cold neutron source system. The apparatus makes use of the pressure difference of helium between high pressure helium pipelines and low pressure helium pipelines in the cold neutron source system, the hydrogen impurities in the cold neutron source system are removed by an adsorption device, wherein the adsorption device has strong adsorption capacity and the adsorbent in the adsorption device is easy to reproduce; the absorbed hydrogen impurities are concentratedly discharged to the outside of the cold neutron source system, so that process gas in the cold neutron source system is not easy to be polluted, and bad consequences that the accumulation of the hydrogen impurities in a low temperature region of the cold neutron source system leads to hydrogen embrittlement of structural materials to make the structural materials lose efficacy can be effectively avoided.

The invention discloses a low-resistivity P type gallium nitride material and a preparation method thereof. The preparation method comprises the following steps that: a substrate is heated, heat treatment is performed on the substrate under a hydrogen environment, so that impurities of the surface of the substrate can be removed; a low-temperature nucleating layer is grown on the substrate so as to provide a nucleation center for subsequent material growth; a non-intentionally-doped template layer is grown on the low-temperature nucleating layer; a P type gallium nitride layer with a certain hydrogen impurity concentration is grown on the non-intentionally-doped template layer through low-temperature epitaxial growth; under a nitrogen environment, high-temperature annealing is carried out, so that an acceptor in the P type gallium nitride layer is activated, so that the low-resistivity P type gallium nitride material can be obtained. According to the method of the invention, hydrogen impurities and donor defects (such as nitrogen vacancies) form complexes, so that donor defects can be passivated, and therefore, an acceptor compensation effect in the P type gallium nitride material can be reduced, and the resistivity of the P type gallium nitride material can be decreased.

The invention provides a titanium-doped high-quality silicon oxide film and a preparation method therefor. A related device includes but is not limited to an MOS device and a bipolar transistor. Through the adding of titanium impurity to gate oxide or buried oxide, the combination between oxygen vacancy and hydrogen impurity can be weakened, and the inhibition of the release of protons follows. Finally, the forming of charges at a SiO2 / Si interface state and in SiO2 is inhibited at the same time. Titanium-doped silicon oxide serves as the gate oxide or buried oxide, so the film can iron out the defects that the conventional Al, Cr, O and Si doping just can inhibit the forming of charges in the SiO2 but cannot remarkably reduce the SiO2 / Si interface state, thereby remarkably improving the electrical performance of MOS and BJT and other silicon-base devices and the stability in a severe environment.

The invention discloses a hydrogen emission control method for a hydrogen fuel cell, and relates to the technical field of fuel cells, and the method comprises the following steps: step S10, calibrating the opening time and the closing time of a hydrogen emission valve of the hydrogen fuel cell under constant-power and variable-power operation; and step S20, controlling the opening and closing of the hydrogen discharge valve according to the actual working condition of the hydrogen fuel cell and the calibrated opening time and closing time of the hydrogen discharge valve when the hydrogen fuel cell operates at constant power and variable power. The hydrogen discharge amount can be accurately controlled, on one hand, performance reduction of the hydrogen fuel cell caused by accumulation of hydrogen impurity gas and redundant water vapor can be prevented, on the other hand, over-high-frequency hydrogen discharge is prevented, and the hydrogen utilization rate is increased.

The invention discloses a simulation method for removing the hydrogen impurity in an n-type phosphorus doping diamond film. According to time dependent density functional theory and the molecular dynamics theory, the first principle and molecular dynamics calculation is conducted on an n n-type phosphorus doping diamond film model, photon absorption, valence electron transition and chemical bond breakage in the model are simulated under a laser field and a temperature field, and the method for removing the hydrogen element impurity in the n-type phosphorus doping diamond film is further provided. The strength, the frequency and the range value of the temperature of femtosecond lasers which can break phosphorus and hydrogen bonds and remove the hydrogen impurity are calculated.