Apparatus for preparing polysilicon through electron beam deoxygenation and preliminary ingot casting coupling, and method thereof

A technology of polysilicon and electron beams, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of increasing overall investment and low production efficiency, and achieve the reduction of total energy consumption, improvement of production efficiency, and efficient removal of Effect

Inactive Publication Date: 2015-05-27
青岛隆盛晶硅科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this process, electron beam smelting technology and crystal growth technology both involve the melting and solidification process of silicon materials. The crystal growth link increases the overall investment, and the production efficiency is low

Method used

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  • Apparatus for preparing polysilicon through electron beam deoxygenation and preliminary ingot casting coupling, and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] An electron gun 1 is connected to the top of the furnace body 2, an inflatable valve 8 is opened at the upper end of the side, and an air release valve 9 is opened at the lower end. A quartz crucible 6 is placed on the water-cooled copper base 7 in the furnace body 2, and the outer wall of the quartz crucible 6 is from the inside to the inside. A graphite heater 5 and a graphite carbon felt 4 are surrounded in sequence on the outside, and a thermal insulation cover 3 is installed on the top of the graphite carbon felt. A hole is opened at the central position of the bottom of the quartz crucible 6, and the area of ​​the hole is 20% of the bottom area of ​​the quartz crucible.

Embodiment 2

[0038] Using the device in Example 1 to carry out electron beam deoxidation and preliminary ingot coupling to prepare polysilicon:

[0039] (1) Loading: crush 500kg of polysilicon ingot bottom material with an oxygen content of 0.008%, wash and dry it, put it into the quartz crucible 6, and close the vacuum device cover 3.

[0040](2) Vacuuming: Turn on the cooling circulating water device of the equipment, and supply cooling circulating water to the equipment; supply cooling circulating water to the water-cooled copper base 7 . Turn on the vacuum pump of furnace body 2, firstly use the mechanical pump and Roots pump in the vacuum pump group to pump the vacuum degree of furnace body 2 to 5×10 -2 Pa, the vacuum degree of electron gun 1 is pumped to 5×10 -3 Pa, turn off the vacuum pump unit.

[0041] (3) Melting: Adjust the power of the graphite heater 5 to 10kW to make the temperature of the silicon material reach 1450°C, so that the silicon material is completely melted.

...

Embodiment 3

[0047] Using the device in Example 1 to carry out electron beam deoxidation and preliminary ingot coupling to prepare polysilicon:

[0048] (1) Loading: crush 500kg of polysilicon ingot bottom material with an oxygen content of 0.006%, wash and dry it, put it into the quartz crucible 6, and close the vacuum device cover 3.

[0049] (2) Vacuuming: Turn on the cooling circulating water device of the equipment, and supply cooling circulating water to the equipment; supply cooling circulating water to the water-cooled copper base 7 . Turn on the vacuum pump of the furnace body 2, first use the mechanical pump and Roots pump in the vacuum pump group to pump the vacuum degree of the furnace body 2 to 4×10 -2 Pa, electron gun 1 vacuum pumped to 4 × 10 -3 Pa, turn off the vacuum pump unit.

[0050] (3) Melting: Adjust the power of the graphite heater 5 to 25kW to make the temperature of the silicon material reach 1550°C and completely melt the silicon material.

[0051] (4) Electro...

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Abstract

The invention belongs to the field of polysilicon ingot casting, and especially relates to an apparatus for preparing polysilicon through electron beam melting deoxygenation and crystal growing technology coupling, and a method thereof. The apparatus is characterized in that the top of a furnace body is connected and provided with an electron gun, the upper end of the side portion of the furnace body is provided with a gas charging valve, the lower end of the furnace body is provided with a gas discharging valve, a quartz crucible is arranged in the furnace body, the outer wall of the quartz crucible is sequentially encircled with a graphite hater and a graphite carbon felt from inside to outside, the top of the graphite carbon felt is provided with a heat insulation cover, the central position of the bottom of the quartz crucible is provided with a hole, and the bottom of the quartz crucible is provided with a water cooled copper pedestal. The method comprises the following steps: charging, and carrying out vacuum pumping; heating to completely fuse a silicon material; carrying out high pressure and beam preheating, and stopping high pressure and beam; maintaining the silicon material in a liquid state; carrying out electron beam melting deoxygenation; carrying out preliminary ingot casting crystal growth; adjusting a graphite heater to make the growth speed of silicon crystals to 1.2-1.3cm / h; and cooling, and taking the obtained polysilicon. The method realizes two technologies on the same apparatus, electron beam melting is used to remove oxygen impurities in silicon, the total energy consumption reduces by 30%, and the production efficiency increases by 40%.

Description

technical field [0001] The invention belongs to the field of polycrystalline silicon ingots, and in particular relates to a device and method for preparing polycrystalline silicon by coupling electron beam smelting deoxidation and crystal growth technology. Background technique [0002] Metallurgical preparation of solar-grade polysilicon technology, as the only way to develop low-cost and environmentally friendly solar-grade polysilicon preparation technology, has achieved considerable development and achieved industrial production. Purification of polysilicon by metallurgical method refers to the method of removing various impurity elements (phosphorus, boron, oxygen and metal) in silicon in sequence by using physical metallurgical means without silicon participating in chemical reactions. It is not a single preparation method. It is an integrated method, which mainly uses the principle of saturated vapor pressure, segregation principle and oxidation difference principle, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06C01B33/037
Inventor 安广野郭校亮王登科姜大川谭毅
Owner 青岛隆盛晶硅科技有限公司
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