Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crucible for polycrystalline silicon ingot, production method of crucible as well as polycrystalline silicon ingot and production method thereof

A polysilicon and crucible technology, applied in the field of polysilicon production equipment, can solve the problems of polysilicon ingots with poor minority carrier life and the inability to effectively reduce metal impurities and oxygen impurity pollution at the same time, so as to reduce the area with poor minority carrier life, accelerate the coagulation time, and improve the firmness degree of effect

Inactive Publication Date: 2017-12-12
JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the first aspect of the present invention provides a crucible for polysilicon ingot casting, which has a coating structure of a gettering layer and a silicon nitride layer sequentially arranged on the inner and outer surfaces of the crucible body, which can simultaneously reduce the metal impurities and the silicon nitride layer in the crucible. Oxygen impurities pollute crystalline silicon, reduce the area of ​​poor minority carrier life in polycrystalline silicon ingots obtained by casting, and are used to solve the problem that the ingot crucible in the prior art cannot effectively reduce the pollution of metal impurities and oxygen impurities to crystalline silicon at the same time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crucible for polycrystalline silicon ingot, production method of crucible as well as polycrystalline silicon ingot and production method thereof
  • Crucible for polycrystalline silicon ingot, production method of crucible as well as polycrystalline silicon ingot and production method thereof
  • Crucible for polycrystalline silicon ingot, production method of crucible as well as polycrystalline silicon ingot and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] This embodiment provides a method for preparing a crucible for polycrystalline silicon ingots, comprising the following steps:

[0068] 1) Prepare barrier layer slurry: mix quartz powder with a purity greater than 4N (above 99.99%) with water to prepare a high-purity quartz slurry; mix the high-purity quartz slurry with silica sol at a mass ratio of 3:1, Obtain the barrier layer slurry; Wherein, the silica sol is purchased from Suzhou Nadi Company; SiO in the silica sol 2 The particle size is nanoscale, and the mass concentration is 30wt%; the mass concentration of quartz powder in the high-purity quartz slurry is 70wt%, and its particle size is 5 μm;

[0069] Prepare gettering layer slurry: get 100g of polycrystalline silicon powder (with a particle size of 10 μm) and 50 g of silicon nitride powder (with a particle size of 1-2 μm) and polycrystalline silicon powder (both of which have a purity of 99.99% above), add 300g of pure water, and mix uniformly to obtain the g...

Embodiment 2

[0076] This embodiment provides a method for preparing a crucible for polycrystalline silicon ingots, comprising the following steps:

[0077] 1) Preparation of gettering layer slurry: Take 100g of polycrystalline silicon powder (with a particle size of 10 μm), 50 g of silicon nitride powder (with a particle size of 1-2 μm) and polycrystalline silicon powder (both with a purity of 99.99%), add 300g of pure water, and mix evenly to obtain the gettering layer slurry;

[0078] Get 400g of high-purity silicon nitride powder (a particle size of 0.8 μm, a product produced by Japan UBE Company, wherein the nitrogen content > 38wt%, and the oxygen content < 2.0wt%), add it to 800g of pure water, stir evenly to obtain nitrogen Si layer slurry;

[0079] 2) Take a cuboid quartz crucible body with a model size of 840mm×840mm×480mm for use. The crucible body includes a base and 4 side walls extending upward from the base, and the base and 4 side walls together form a storage space;

[00...

Embodiment 3

[0083] This embodiment provides a method for preparing a crucible for polycrystalline silicon ingots, comprising the following steps:

[0084] 1) Prepare barrier layer slurry: mix quartz powder (with a particle size of about 6 μm) with a purity greater than 4N (99.99%) and water to prepare a pure quartz slurry with a mass concentration of 70 wt%, and use it as a barrier layer slurry material;

[0085] Prepare gettering layer slurry: get 100g of polycrystalline silicon powder (with a particle size of 10 μm) and 50 g of silicon nitride powder (with a particle size of 1-2 μm) and polycrystalline silicon powder (both of which have a purity of 99.99% above), add 300g of pure water, and mix uniformly to obtain the getter layer slurry;

[0086] Take 400g of high-purity silicon nitride powder (the particle size is 50um, a product produced by Japan UBE Company, wherein the nitrogen content> 38wt%, oxygen content<2.0wt%), add it to 800g pure water, stir to obtain nitriding Silicon lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a crucible for a polycrystalline silicon ingot with a coating structure. The crucible comprises a crucible body and the coating structure arranged on the inner surface or the inner and outer surfaces of the crucible body, wherein the crucible body comprises a base and side walls which upward extend from the base; an accommodation space is defined by the base and the side walls; the coating structure comprises impurity absorbing layers and silicon nitride layers; the impurity absorbing layers and the silicon nitride layers are sequentially and alternatively arranged to form an (AB)n arrangement form from the crucible body to the coating structure along the thickness direction; A represents the impurity absorbing layers, B represents the silicon nitride layers, and n is an integer which is greater than or equal to 1; and the A is a polycrystalline silicon powder coating of which the surface is provided with a SiO2 oxide layer, or a mixed coating of a material of which the melting point is greater than or approximates to that of crystalline silicon and surface-unoxidized polycrystalline silicon powder and / or polycrystalline silicon powder of which the surface is provided with the SiO2 oxide layer. The coating structure in the crucible can stop metal impurities and oxygen impurities in the crucible from diffusing into the crucible during ingot casting. The invention also provides a production method of the crucible and application of the crucible in the ingot casting.

Description

technical field [0001] The invention relates to the technical field of polysilicon production equipment, in particular to a crucible for polysilicon ingot casting and a preparation method thereof, a polysilicon ingot and a preparation method thereof. Background technique [0002] At present, the preparation of polycrystalline silicon ingots is mainly carried out by the directional solidification system method (DSS for short) provided by GT Solar. After the material is completely melted, the temperature at the bottom of the crucible is gradually reduced, so that the silicon melt continues to crystallize from the bottom of the crucible until it is completely solidified, and a polycrystalline silicon ingot is obtained. Polycrystalline silicon ingots are cut into small squares that can be used for slicing after cutting off regions with low minority carrier lifetimes. However, the polycrystalline silicon ingot produced by this method is polluted by the quartz crucible, so the qu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/06C30B28/06B28B11/04
CPCC30B29/06B28B11/04C30B28/06
Inventor 雷琦胡动力鄢俊琦何亮
Owner JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com