A Low Noise and Low Loss Insulated Gate Bipolar Transistor

Abstract

The invention relates to a low-noise low-loss insulated gate bipolar transistor. The low-noise low-loss insulated gate bipolar transistor comprises a P-type collector region, an N-type buffer layer, an N-type drift region, a groove gate structure, first P-type body regions, second P-type body regions, N-type emitter body regions, highly-doped N-type buried layers and emitter metal. The low-noise low-loss insulated gate bipolar transistor is characterized in that the highly-doped N-type buried layers are located below the surfaces inside the second P-type body regions. Current paths of holes are greatly improved by increasing the surface resistance of a device, displacement currents of the device in the switching process are greatly reduced, overshoot is greatly reduced, and noise is greatly lowered. Meanwhile, due to the fact that the second P-type body regions in a traditional structure are reserved, the good compromise relation between forward conduction pressure drop and turn-off losses in the traditional structure is reserved. The low-noise low-loss insulated gate bipolar transistor is simple in structure and process and easy to achieve.

Description

Technical field [0001] The present invention mainly relates to the technical field of power semiconductor devices, in particular to a low-noise and low-loss insulated gate bipolar transistor, which is particularly suitable for high-power integrated circuits such as variable frequency speed regulation, electric traction, variable frequency home appliances, half-bridge drive circuits and automobile production And other fields. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a representative device in the field of modern power electronics. In the thirty years since its birth to the present, its market capacity has far exceeded that of traditional rectifier devices, showing extremely strong Its vitality and development potential have become one of the current mainstream power electronic devices. It perfectly combines the fast switching speed of metal oxide semiconductor tubes and the strong current capability of bipolar transistors (Bipolar Junction Transist...

AI Technical Summary

Problems solved by technology

However, due to the existence of a floating P-type body region in this structure, a large amount of hole current will be injected from the collector to the device drift region when the device is turned on, and then flow along the device surface and under the floating P-type body region to the emitter. , this part of the current raises the potential under the gate, causing the gate capacitance of the device to be reversely charged, resulting in a large overshoot of the gate voltage and serious noise, which makes the device vibrate significantly during the switching process, reducing reliability, and seriously Its practical application is limited, so the noise problem during the switching process of IGBT devices has become the main problem in its system application. Optimizing the design of the IGBT structure to reduce the noise of the device during the turn-on process is of great significance to the development of IGBTs

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