Method for preparing cadmium sulfide quantum dots

A technology of quantum dots and cadmium sulfide, which is applied in the field of semiconductor nanomaterial preparation, can solve the problems of strong toxicity, high risk and aging of organic cadmium, and achieves good monodispersity and stability, wide adjustable spectrum range and fast reaction. Effect

Inactive Publication Date: 2014-07-23
JILIN UNIV
View PDF2 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the organic cadmium used in this method is highly toxic and dangerous, and the solvent TOPO is expensive, which is not conducive to a large amount of synthesis
At the same time, the particles prepared by this method need to be selected in size to achieve high quality and the same size, which complicates t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing cadmium sulfide quantum dots
  • Method for preparing cadmium sulfide quantum dots
  • Method for preparing cadmium sulfide quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] First, a cadmium oleate solution is prepared. Take 0.3mmol (0.0384g) of cadmium oxide powder, 0.61mmol (0.213mL) of oleic acid, and 3.787mL of octadecene, heat to 250°C under nitrogen protection until the cadmium oxide powder dissolves, cool to 80°C, and prepare Into cadmium oleate solution, which is light yellow transparent solution.

[0027] Then take 0.5mL concentration of 0.1 mol / L (TMS) 2 The octadecene solution of S was injected into the above-mentioned cadmium oleate solution at 80° C., and reacted for 5 minutes to obtain CdS nanoclusters. Its UV-visible absorption peaks are sharp and symmetrical, showing a good size distribution.

Embodiment 2

[0029] First, a cadmium myristate solution is prepared. Take 10mmol (1.28g) of cadmium oxide powder, 21mmol (4.79g) of myristic acid, and 15mL of octadecene, heat to 250°C under nitrogen protection, and cool to 120°C to prepare a cadmium myristate solution. It is a colorless transparent solution.

[0030] Then take 2 mL of (TMS) with a concentration of 0.5 mol / L 2 The octadecene solution of S was injected into the above-mentioned cadmium myristate solution at 120° C., and reacted for 5 minutes to obtain CdS nanoclusters. The concentration of the product increased slightly, but the UV-visible absorption peaks remained sharp and symmetrical.

Embodiment 3

[0032] First, a cadmium myristate solution is prepared. Get 80mmol (10.24g) of cadmium oxide powder, 170mmol (38.82g) of myristic acid, and 130mL of octadecene, heat to 250°C under nitrogen protection conditions, cool to 100°C, and prepare a cadmium myristate solution. It is a colorless transparent solution.

[0033] Then take 10 mL of (TMS) with a concentration of 1 mol / L 2 The octadecene solution of S was injected into the above-mentioned cadmium myristate solution at 100° C., and reacted for 10 minutes to obtain CdS nanoclusters. After increasing the concentration, the UV-visible absorption peaks remained sharp and symmetrical.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing cadmium sulfide (CdS) quantum dots, belongs to the field of semiconductor nano-materials preparation and in particular relates to a method of preparing size-adjustable and monodispersity-excellent semiconductor quantum dots by a novel method. The preparation method comprises the following steps: synthesizing carboxylic acid cadmium used as a cadmium source and (TMS)2S used as a sulfur source to form controlled-sized CdS semiconductor nanoclusters used as precursors for the synthetic reaction of CdS quantum dots, mixing the ligand with a non-coordinating solvent, heating and injecting the prepared CdS nanoclusters to obtain the CdS quantum dots. The synthesis method of the CdS quantum dots disclosed by the invention has inventive step and is convenient to operate and fast in reaction. The CdS quantum dots can be synthesized in large quantities and the synthesized quantum dot has adjustable sizes and excellent monodispersity and stability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and relates to a brand-new method for preparing cadmium sulfide quantum dots with adjustable size and good monodispersity. Background technique [0002] After the semiconductor material is gradually reduced from the bulk phase to a certain critical size (1-20 nanometers), the volatility of the carriers becomes significant, and the movement will be limited, resulting in an increase in kinetic energy. The corresponding electronic structure is continuous from the bulk phase to The energy level structure becomes a quasi-split discontinuity, a phenomenon known as the quantum size effect. The more common semiconductor nanoparticles, that is, quantum dots, mainly include II-VI, III-V and IV-VI groups. These types of quantum dots are well obeyed by the quantum size effect, and their properties change regularly with the size, for example, the absorption and emission wavelen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01G11/02C09K11/56B82Y20/00B82Y30/00B82Y40/00
Inventor 解仁国王硕李冬泽杨文胜
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products