High-power semiconductor laser beam combining method

A laser beam combining and semiconductor technology, applied in the field of laser applications, can solve the problems of limited application fields, inability to apply lasers, and large loss of light energy, and achieve the effect of being beneficial to application, low cost, and low loss of light energy

Active Publication Date: 2014-07-23
FOCUSLIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the polarization degree of the laser light source of a semiconductor laser is about 90%, for example, the polarized light emitted by a semiconductor laser with a polarization state of TE generally contains 90% of TE polarized light and 10% of TM polarized light, so if polarization combining is used, the light energy The loss is large, and it is only suitable for beam combining in the direction of the fast axis, and the output light is mixed

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Examples

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Example Embodiment

[0056] Example one

[0057] Figure 2a It is a schematic diagram of the optical path of a high-power semiconductor laser beam combining device that combines the method of the present invention. A high-power semiconductor laser beam combining device includes a semiconductor laser stack 1, a collimating lens group 10, and a beam combining system 6 arranged in sequence along the optical path. The semiconductor laser stack 1 is composed of 4 stacks of semiconductor laser units. The beam system 6 includes a reflective spacer film mirror 4 and a total reflection mirror 5. The reflective spacer film mirror 4 is provided with a reflective film on the lower surface of the flat lens. The number of reflective films is 2, and the distance between the reflective films is They have the same width; the reflective spacer film mirror 4 and the total reflection mirror 5 are placed between 45° in the light emitting direction of the semiconductor laser stack 1, and respectively correspond to the upp...

Example Embodiment

[0072] Example two

[0073] Figure 3a An embodiment of a semiconductor laser beam combining system designed for combining the beam combining method of the present invention. The laser beam combining system is mainly composed of a semiconductor laser stack 1, a collimating lens group 10, and a beam combining system 6. The semiconductor laser stack 1 is composed of 4 semiconductor laser units; the collimating lens group is placed on the semiconductor laser The laser exit point includes a fast-axis collimating lens 2 and a slow-axis collimating array 3. The fast-axis collimating lens can be a collimating D-type aspheric lens; the slow-axis collimating array is a single-array cylindrical lens; The beam combining system 6 is placed in the exit direction of the collimated laser beam. It consists of two parallel six-sided prisms 7. The two parallel six-sided prisms 7 are placed in parallel and equidistant from each other, and the placement positions are sequentially fixed in the vertic...

Example Embodiment

[0085] Example three

[0086] Figure 5 An embodiment of a semiconductor laser beam combining system designed to combine the beam combining method of the present invention. A high-power semiconductor laser beam combining system includes a semiconductor laser stack 1, a collimator lens group 10, and a beam combining device arranged in sequence along the optical path 6. The collimating lens group 10 includes a fast axis collimating lens 2 and a slow axis collimating array 3, wherein the fast axis collimating lens is a collimating D-type aspheric lens, and the slow axis collimating array is a single-array cylindrical surface lens. The small prism in the prism combination in the beam combining device 6 is selected to be a triangular prism 8, and the acute angle between the two adjacent sides of the parallel six-sided prism 9 is 45°. The semiconductor laser stack is equally divided into upper and lower parts. For example, the semiconductor laser stack 1 includes 4 semiconductor lase...

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Abstract

The invention provides a high-power semiconductor laser beam combining method. By the method, a laser beam combining light source with fine uniformity, high energy density and half-sized beam diameter can be obtained. The high-power semiconductor laser beam combining method includes the steps: respectively performing fast axis and slow axis collimation for laser beams emitted by semiconductor laser units of a semiconductor laser stack; enabling the collimated laser beams to pass a beam combining device, horizontally emitting parts of the laser beams along an incident optical axis or after double refraction, vertically shifting parts of the laser beams, enabling the other parts of the laser beams to be parallel to the horizontally emitted laser beams after two-time total reflection, and emitting the laser beams in a plug-in beam combining manner.

Description

technical field [0001] The patent of the invention belongs to the field of laser application, and specifically relates to a high-power semiconductor laser beam combination method. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, high reliability, long service life, and low power consumption. They have been widely used in various fields of the national economy. However, the current popularization and application of semiconductor lasers is restricted by the quality of their beams. The beam quality, brightness and power of semiconductor lasers are important research directions at present. Laser beam combining technology has developed rapidly in recent years. It is a process of improving beam quality, increasing output power, and increasing power density. Laser beam combining technology has been widely used in laser processing and high power fiber coupling products. [0003] Currently commonly used laser beam combining methods...

Claims

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Application Information

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IPC IPC(8): H01S5/40H01S5/06G02B27/28G02B27/10
Inventor 蔡磊刘兴胜杨凯王警卫李小宁
Owner FOCUSLIGHT TECH
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