An integrated circuit integrating u-shaped channel device and fin-shaped channel device and its preparation method

Abstract

The invention belongs to the technical field of semiconductor device manufacturing and particularly provides an integrated circuit integrating a U-shaped channel device and a fin-shaped channel device and a preparation method of the integrated circuit. A channel isolation structure with a doping well is formed in a semiconductor substrate; a polycrystalline silicon sacrificial gate electrode is formed on the doping well, and a source electrode and a drain electrode are formed on the two sides of the polycrystalline silicon sacrificial gate electrode respectively; the formed structure is covered, interlayer dielectrics are deposited, the polycrystalline silicon sacrificial gate electrode is exposed by means of polishing and then is etched, and the U-shaped channel device is formed in the semiconductor substrate by means of photoetching; a fin-shaped channel structure is formed in the semiconductor substrate by means of photoetching again, and then a gate dielectric layer and a gate electrode are formed, so that the fin-shaped channel device is formed. According to the method, the fin-shaped channel device can be integrated on a chip and serve as a high-performance device, and the U-shaped channel device can be integrated on the same chip and sever as a low-power-consumption device; as a result, a device with a big shape difference is obtained, a small turn-off current and a large turn-on current are obtained, and the performance of the chip is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to an integrated circuit integrating U-shaped channel devices and fin-shaped channel devices and a preparation method thereof. Background technique [0002] In recent years, the technology of microelectronic devices with silicon integrated circuits as the core has developed rapidly. The development of integrated circuit chips basically follows Moore's law, that is, the integration level of semiconductor chips doubles every 18 months. With the increasing integration of semiconductor chips, it is often necessary to integrate high-performance devices and low-power devices on the chip at the same time, so as to improve the performance of the chip. The traditional technology is to realize these two devices by adjusting the threshold voltage of the device, and the process is complicated and difficult to control. [0003] While the size of semiconduc...

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Problems solved by technology

The traditional technology is to realize these two devices by adjusting the threshold voltage of the device, the process is complicated and difficult to control

[0003] While the size of semiconductor devices continues to shrink, the channel length of MOS transistors is also continuously shortened. When the channel length of MOS transistors becomes very short, the short channel effect will degrade the performance of semiconductor chips and even fail to work properly.

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