Method for preparing non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate
A single crystal semiconductor and self-supporting substrate technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of inability to peel off large-sized substrates, complex peeling process, and reduce substrate costs, etc. problems, to promote research and industrialization, improve production efficiency and yield, and solve low-cost effects
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[0017] See figure 1 , And refer to Figure 2-Figure 4 As shown, the present invention provides a method for preparing a non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate, which includes the following steps:
[0018] Step 1: Take a substrate 1, clean the surface, and place it in the growth chamber of the material growth equipment. The substrate 1 is a non-polar or semi-polar substrate, and the material of the substrate 1 is an R surface. Sapphire substrate, M surface Sapphire substrate, Surface silicon carbide substrate or Surface silicon carbide substrate; the material growth equipment is a metal organic chemical vapor deposition equipment or a pulsed laser deposition equipment.
[0019] Step 2: Growing a zinc oxide crystal layer 2 on the substrate 1 as a sacrificial layer, and the thickness of the zinc oxide crystal layer 2 is 100 nm to 500 nm;
[0020] The zinc oxide crystal layer 2 can be prepared by metal-organic chemical vapor dep...
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