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Method for preparing non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate

A single crystal semiconductor and self-supporting substrate technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of inability to peel off large-sized substrates, complex peeling process, and reduce substrate costs, etc. problems, to promote research and industrialization, improve production efficiency and yield, and solve low-cost effects

Inactive Publication Date: 2014-07-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method of peeling off the substrate is not only complicated, it is not conducive to reducing the cost of the substrate, and it is impossible to peel off a large-size substrate.

Method used

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  • Method for preparing non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate
  • Method for preparing non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate
  • Method for preparing non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate

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Embodiment Construction

[0017] See figure 1 , And refer to Figure 2-Figure 4 As shown, the present invention provides a method for preparing a non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate, which includes the following steps:

[0018] Step 1: Take a substrate 1, clean the surface, and place it in the growth chamber of the material growth equipment. The substrate 1 is a non-polar or semi-polar substrate, and the material of the substrate 1 is an R surface. Sapphire substrate, M surface Sapphire substrate, Surface silicon carbide substrate or Surface silicon carbide substrate; the material growth equipment is a metal organic chemical vapor deposition equipment or a pulsed laser deposition equipment.

[0019] Step 2: Growing a zinc oxide crystal layer 2 on the substrate 1 as a sacrificial layer, and the thickness of the zinc oxide crystal layer 2 is 100 nm to 500 nm;

[0020] The zinc oxide crystal layer 2 can be prepared by metal-organic chemical vapor dep...

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Abstract

The invention provides a method for preparing a non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate. The method comprises the steps that a substrate is taken; a zinc oxide crystallizing layer grows on the substrate and serves as a sacrificial layer; a semiconductor supporting layer grows on the zinc oxide crystallizing layer at low temperature; a semiconductor single crystal epitaxial layer grows on the surface of the semiconductor supporting layer, in the growing process, zinc oxide of the zinc oxide crystallizing layer is decomposed, the semiconductor supporting layer and the semiconductor single crystal epitaxial layer are separated from the substrate, and the semiconductor supporting layer and the semiconductor single crystal epitaxial layer are semiconductor crystal layers. A mechanical polishing method is adopted for removing the semiconductor supporting layer of the semiconductor crystal layer to obtain the semiconductor single crystal epitaxial layer, the semiconductor single crystal epitaxial layer is used as the non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate, and the preparation is finished. The method has the advantages that the cost is low and the size is large.

Description

Technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for preparing a non-polar surface or semi-polar surface single crystal semiconductor self-supporting substrate. Background technique [0002] Nowadays, non-polar or semi-polar gallium nitride (GaN) and aluminum nitride (AlN) light-emitting diodes (LEDs) have become research hotspots. The reason is that the non-polar and semi-polar materials do not have spontaneous polarization and piezoelectric polarization, which can avoid the quantum confinement Stark effect and improve the internal quantum efficiency of the LED. On the other hand, since the light waves emitted by the non-polar and semi-polar LEDs are polarized light, they can be directly used in the backlight of flat-panel displays, which greatly simplifies the design of backlighting for flat-panel displays, thereby reducing device preparation. Complexity and reduce costs. However, the substrate problem is one of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/005H01L21/6835H01L2221/6834
Inventor 张恒魏鸿源杨少延赵桂娟金东东王建霞李辉杰刘祥林王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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