Capacitor ceramic medium material and preparation method thereof

A capacitor ceramic and dielectric material technology, applied in the field of high dielectric constant, high temperature stable lead-free capacitor ceramic dielectric material and its preparation, to achieve the effects of small capacitance temperature coefficient, increased dielectric constant, and high temperature stability

Active Publication Date: 2014-08-06
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Patent CN102701738A discloses a preparation method of high stability dielectric ceramics, but the dielectric constant of the dielectric ceramics is only about 70
The patent CN102354599A discloses a method for prepar

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  • Capacitor ceramic medium material and preparation method thereof
  • Capacitor ceramic medium material and preparation method thereof
  • Capacitor ceramic medium material and preparation method thereof

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preparation example Construction

[0031] The preparation process of CK capacitor ceramic dielectric material of the present invention is as follows:

[0032] 1) According to the expression xBi(Zn 2 / 3 Nb 1 / 3 )O 3 -(1-x)BaTiO 3 , x=0.18, select BaCO according to the stoichiometric ratio of metal atoms in the expression3 , ZnO, Nb 2 o 5 、 Bi 2 o 3 and TiO 2 Reserved as matrix raw material, Bi 2 o 3 , Nb 2 o 5 As a doping component, the base material is ball milled, dried, and then heated to 800-900°C for 2-3 hours to obtain a powder;

[0033] 2) After ball milling and drying the powder obtained in step 1), add the doping component Bi 2 o 3 and Nb 2 o 5 Then heat up to 800-900°C and pre-fire for 2-3 hours to obtain doped powder;

[0034] 3) ball milling and drying the doped powder obtained in step 2) to obtain ceramic powder, adding a binder to the ceramic powder and mixing evenly, passing through a 100-200 mesh sieve, and pressing into tablets to obtain a ceramic green sheet;

[0035] 4) heating ...

Embodiment 1

[0049] A high dielectric constant and high temperature stable lead-free capacitor ceramic dielectric material, the chemical composition includes a matrix component and a doping component, and the matrix component is 0.18Bi(Zn 2 / 3 Nb 1 / 3 )O 3 -0.82BaTiO 3 , the doping composition is Bi 2 o 3 and Nb 2 o 5 , the doping amounts are 10% and 3.0% of the mass fraction of the matrix components, respectively

[0050] The preparation method of the above-mentioned high-dielectric and high-temperature stable lead-free CK capacitor ceramic dielectric material comprises the following steps:

[0051] (1) According to the expression 0.18Bi(Zn 2 / 3 Nb 1 / 3 )O 3 -0.82BaTiO 3 , select BaCO according to the stoichiometric ratio of metal atoms in the expression 3 , ZnO, Nb 2 o 5 、 Bi 2 o 3 and TiO 2 As a matrix raw material; the weighed BaCO 3 , ZnO, Bi 2 o 3 , Nb 2 o 5 、TiO 2 Mix ball milling with zirconia balls and absolute ethanol for 24 hours, dry, then pre-fire at 800-900°...

Embodiment 2

[0057] A high dielectric high temperature stable lead-free capacitor ceramic dielectric material, the chemical composition includes a matrix component and a doping component, and the matrix component is 0.18Bi(Zn 2 / 3 Nb 1 / 3 )O 3 -0.82BaTiO 3 , the doping composition is Bi 2 o 3 and Nb 2 o 5 , and the doping amounts are 15.0% and 2.5% of the mass fraction of the matrix components, respectively.

[0058] The preparation method of the above-mentioned high-temperature stable lead-free capacitor ceramic dielectric material comprises the following steps:

[0059] (1) According to the expression 0.18Bi(Zn 2 / 3 Nb 1 / 3 )O 3 -0.82BaTiO 3 , select BaCO according to the stoichiometric ratio of metal atoms in the expression 3 , ZnO, Nb 2 o 5 、 Bi 2 o 3 and TiO 2 As a matrix raw material; the weighed BaCO 3 , ZnO, Bi 2 o 3 , Nb 2 o 5 、TiO 2 Mix ball milling with zirconia balls and absolute ethanol for 24 hours, dry, then pre-fire at 800-900°C for 2 hours, with a heating r...

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Abstract

The invention discloses a lead-free capacitor ceramic medium material with a high dielectric constant and high temperature stability and a preparation method of the ceramic medium material. The ceramic medium material comprises substrate ingredients and doped ingredients, wherein the substrate ingredients are xBi (Zn2/3Nb1/3) O3-(1-x) BaTiO3, wherein x is equal to 0.18; doped Bi2O3 is 10-20% of the mass fraction of the substrate ingredients, and Nb2O5 is 2-3% of the mass fraction of the substrate ingredients. By the doping of Nb2O5 and Bi2O3, the sintering temperature of the capacitor ceramic material of a Bi (Zn2/3Nb1/3) O3-BaTiO3 system is not higher than 1050 DEG C, the dielectric-temperature spectrum ranges from -35 to 200 DEG C, the temperature coefficient of capacitance ranges from -250 to 250 ppm, and the dielectric constant remains above 650, so that the dielectric constant of the ceramic medium material is increased, the temperature stability remains high, the temperature coefficient of capacitance is relatively low, and the cost of the ceramic medium material is rather inexpensive as compared with those of other tombarthite systems.

Description

technical field [0001] The invention belongs to the technical field of capacitor dielectric materials, and in particular relates to a high dielectric constant, high temperature stable lead-free capacitor ceramic dielectric material and a preparation method thereof. Background technique [0002] Capacitors are an important class of passive electronic components. They are indispensable components in the electronics, communication and information industries. They can store charges, block DC, filter AC, provide tuning and oscillation, etc. Class I ceramic capacitors have the characteristics of high stability, low dielectric constant and narrow operating range. With the rapid development of the electronics industry, the application fields of capacitors are becoming wider and wider. The research on Class I dielectric materials puts forward new requirements on the basis of high stability, that is, it is hoped that it can maintain high stability under a wide temperature range. At t...

Claims

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Application Information

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IPC IPC(8): C04B35/468C04B35/622
Inventor 郝华孟卓刘韩星罗俊波曹明贺尧中华余志勇
Owner WUHAN UNIV OF TECH
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