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A kind of preparation method of coating sic nanowire on the surface of carbon fiber

A technology of surface coating and carbon fiber, which is applied in the fields of carbon fiber, fiber treatment, textiles and papermaking, etc., can solve the problems of high cost and low purity of SiC nanowires, achieve low raw material and preparation costs, low equipment requirements, simple and practical methods Effect

Active Publication Date: 2016-07-06
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims to solve the problems of high cost and low purity in the existing preparation method of SiC nanowires, and the prior art does not adopt the preparation method of coating SiC nanowires on the surface of carbon fibers, but provides a method of coating SiC nanowires on the surface of carbon fibers. The preparation method of the thread

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  • A kind of preparation method of coating sic nanowire on the surface of carbon fiber
  • A kind of preparation method of coating sic nanowire on the surface of carbon fiber
  • A kind of preparation method of coating sic nanowire on the surface of carbon fiber

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specific Embodiment approach 1

[0025] Embodiment 1: A method for preparing SiC nanowires coated on the surface of carbon fibers described in this embodiment is specifically carried out according to the following steps:

[0026] 1. Mixing: Mix Si powder and graphite powder evenly to obtain a mixture;

[0027] The molar ratio of Si powder and graphite powder is (0.8~1.2):1;

[0028] 2. Ball milling: put the mixture in a vacuum ball milling tank, put in balls at a ratio of (15-20): 1 by mass ratio of balls to materials, and evacuate the vacuum ball milling tank, and then fill the vacuum ball milling tank with 0.01 ×10 5 Pa~0.2×10 5 Argon gas of Pa, under the condition of argon protection, ball mill at a speed of 430r / min-480r / min for 24h-48h to obtain a powder with a particle size of 5nm-30nm;

[0029] The purity of the argon gas is above 99.99%;

[0030] 3. Pickling: immerse the powder with a particle size of 5nm-30nm in hydrochloric acid solution A for 24h-36h to obtain the powder after preliminary pickl...

specific Embodiment approach 2

[0038] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the molar ratio of Si powder and graphite powder in step 1 is 1:1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0039] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the purity of Si powder described in step 1 is 99.99%. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a preparation method for coating a carbon fiber surface with an SiC nanowire, relates to a method for preparing a SiC nanowire and aims at solving the problems that a conventional method for preparing a SiC nanowire is high in cost while the SiC nanowire is low in purity, and a preparation method for coating a carbon fiber surface with a SiC nanowire does not exist in the prior art. The method comprises the following steps: 1, mixing; 2, performing ball-milling; 3, performing acid pickling; 4, washing; 5, performing ultrasonic dispersion and carbon fiber treatment; and 6, drying and performing vacuum furnace treatment, thereby obtaining the SiC nanowire coating the carbon fiber surface. The prepared SiC nanowire coating the carbon fiber surface has the diameter of 10nm-50nm and can reach the length of 100 microns or below, the process is simple, a catalyst is not added in the reaction process, the method is low in cost, and the SiC nanowire is high in conversion rate and high in purity. The method is used for preparing the SiC nanowire coating the carbon fiber surface.

Description

technical field [0001] The invention relates to a preparation method of SiC nanowires. Background technique [0002] The preparation of metal or ceramic nano-coated structures on the surface of carbon fibers has aroused great interest. Silicon carbide has excellent high temperature resistance, and the elasticity and strength of silicon carbide nanowires are much higher than those of silicon carbide fibers or silicon carbide; at the same time Silicon carbide is also a semiconductor material. Silicon carbide nanowires or nanotubes have great potential application value in nanostructure materials, functional materials and optoelectronic devices, field emission cathode electron sources and high-density integrated electronic devices. [0003] Existing methods for preparing SiC nanowires include template method, chemical vapor deposition method, arc discharge method, sol-gel method, and carbothermal reduction method. [0004] In the above-mentioned preparation method, the templat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): D06M11/77D06M101/40
Inventor 康鹏超武高辉李晓鹏
Owner HARBIN INST OF TECH