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Preparation method of p-n junction type ZnO-CoTiO3 room temperature gas-sensitive film

A p-n, room temperature technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of inconsistent development trend of gas-sensing probes, waste of energy by heating devices, combustion of combustible gases, etc. performance, short production cycle, and the effect of reducing operating temperature

Active Publication Date: 2014-09-03
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, CoTiO 3 The working temperature of the gas sensor is as high as 325 ℃ ~ 400 ℃, which is a prominent problem restricting its use and development, because the heating device not only wastes energy, but also does not match the development trend of smart gas sensor probes. More importantly, high temperature is easy to cause flammable Gas combustion directly leads to detection failure

Method used

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  • Preparation method of p-n junction type ZnO-CoTiO3 room temperature gas-sensitive film
  • Preparation method of p-n junction type ZnO-CoTiO3 room temperature gas-sensitive film

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Experimental program
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Effect test

Embodiment 1

[0022] 1) Analytical pure TiO 2 Mix it with a polyvinyl alcohol solution with a mass concentration of 7% according to a mass ratio of 100:5, then pressurize at 50MPa, and pre-fire at 500°C for 2h to obtain TiO 2 target;

[0023] will analyze pure Co 3 o 4 Mix with polyvinyl alcohol solution with a mass concentration of 7% according to a mass ratio of 100:5, then pressurize at 50MPa, and pre-fire at 500°C for 2h to obtain Co 3 o 4 target;

[0024] 2) TiO 2 The target material is put into a radio frequency target position of the magnetron sputtering machine, Co 3 o 4 Put the target into another RF target position of the magnetron sputtering apparatus, and then put a Zn target with a diameter of 65 mm, a thickness of 5 mm, and a purity of 99.99% into the DC sputtering target position;

[0025] 3) The Si substrate was ultrasonically cleaned in absolute ethanol for 10 min, then soaked in the mixed solution for 10 min, and finally was ultrasonically cleaned with deionized wa...

Embodiment 2

[0030] 1) Analytical pure TiO 2Mix with polyvinyl alcohol solution with a mass concentration of 5% according to a mass ratio of 100:10, then pressurize at 100MPa, and pre-fire at 500°C for 2h to obtain TiO 2 target;

[0031] will analyze pure Co 3 o 4 Mix with polyvinyl alcohol solution with a mass concentration of 5% according to a mass ratio of 100:10, then pressurize at 100MPa, and pre-fire at 500°C for 2h to obtain Co 3 o 4 target;

[0032] 2) TiO 2 The target material is put into a radio frequency target position of the magnetron sputtering machine, Co 3 o 4 Put the target into another RF target position of the magnetron sputtering apparatus, and then put a Zn target with a diameter of 65 mm, a thickness of 5 mm, and a purity of 99.99% into the DC sputtering target position;

[0033] 3) The Si substrate was ultrasonically cleaned in absolute ethanol for 10 minutes, then soaked in the mixed solution for 10 minutes, and finally cleaned with deionized water for 10 mi...

Embodiment 3

[0040] 1) Analytical pure TiO 2 Mix it with a polyvinyl alcohol solution with a mass concentration of 10% according to a mass ratio of 100:7, then pressurize at 80MPa, and pre-fire at 700°C for 2h to obtain TiO 2 target;

[0041] will analyze pure Co 3 o 4 Mix with polyvinyl alcohol solution with a mass concentration of 10% according to a mass ratio of 100:7, then pressurize at 80MPa, and pre-fire at 700°C for 2h to obtain Co 3 o 4 target;

[0042] 2) TiO 2 The target material is put into a radio frequency target position of the magnetron sputtering machine, Co 3 o 4 Put the target into another RF target position of the magnetron sputtering apparatus, and then put a Zn target with a diameter of 65 mm, a thickness of 5 mm, and a purity of 99.99% into the DC sputtering target position;

[0043] 3) The Si substrate was ultrasonically cleaned in absolute ethanol for 10 minutes, then soaked in the mixed solution for 10 minutes, and finally cleaned with deionized water for 1...

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Abstract

A preparation method of a preparation method of a p-n junction ZnO-CoTiO3 room temperature gas-sensitive film. The method is as below: placing a TiO2 target and a Co3O4 target into two radio frequency target positions of a magnetron sputtering instrument, and placing a Zn target into a direct current sputtering target position; then placing a Si substrate on a coating sample stage of the magnetron sputtering instrument, then vacuumizing, introducing Ar gas, then conducting pre-sputtering, introducing O2 gas, and finally conducting sputtering coating on the Si substrate to obtain a precursor film; calcining the precursor film, controlling the calcination temperature at 300-700 DEG C and calcination time at 0.5-3 h, and then cooling to room temperature in the furnace to obtain the p-n junction type ZnO-CoTiO3 room temperature gas-sensitive film. The method can effectively control the composition of the film, has good film forming property, convenient operation and short production cycle; and the prepared p-n junction type ZnO-CoTiO3 gas-sensitive thin has uniform distribution, and excellent room temperature gas-sensitive property and can effectively reduce the working temperature.

Description

technical field [0001] The invention relates to a method for preparing a p-n junction type gas-sensitive thin film, in particular to a p-n junction type ZnO-CoTiO 3 A method for preparing a room temperature gas-sensitive film. Background technique [0002] Cobalt titanate (CoTiO 3 ) is a p-type semiconductor gas-sensing material, it is 40ppm C 2 h 5 The sensitivity of OH gas has exceeded 60, the selectivity S 40ppm C2H5OH / S 25ppm propylene Reaching 6.6, the response time and recovery time are 15s and 20s respectively [Chu X F, Liu X Q, Wang G Z, et al. Preparation and gas-sensing Properties of nano-CoTiO 3 [J]. Materials Research Bulletin, 1999, 34(10 / 11): 1789-1795.]. However, CoTiO 3 The working temperature of the gas sensor is as high as 325 ℃ ~ 400 ℃, which is a prominent problem restricting its use and development, because the heating device not only wastes energy, but also does not match the development trend of smart gas sensor probes. More importantly, high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12C23C14/35C23C14/08C23C14/58
Inventor 卢靖张亚宾黄剑锋曹丽云郭荣郭根根
Owner SHAANXI UNIV OF SCI & TECH
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