Silicon photomultiplier detector

Abstract

The invention relates to a silicon photomultiplier detector. The silicon photomultiplier detector is characterized in that the position of an optical signal is determined by means of the shunting effect of a resistance layer on the surface of the silicon photomultiplier detector of a new structure, and two or four independent electrodes are arranged on the surface of the detector. When photons enter APD units working above a breakdown voltage in the detector, an avalanche multiplication current flows towards the extraction electrodes on the surface through the uniform and continuous resistance layer on the surface, a photoelectric current is divided into two parts (corresponding to the two independent extraction electrodes on the surface) or four parts (corresponding to the four independent extraction electrodes on the surface), the magnitudes of currents of the extraction electrodes relate to the magnitude of resistance between the positions of the incident photons and the extraction electrodes, and the resistance relates to the distances between the positions of the incident photons and the extraction electrodes. Due to the facts that the magnitudes of the currents of the extraction electrodes are measured at the same time and theoretical calculation is combined, incident position information of the photons can be obtained. The silicon photomultiplier detector has the advantages of being high in flexibility, high in resolution ratio, simple in circuit configuration and high in response speed.

Description

technical field [0001] The invention relates to a high-gain semiconductor photodetector, especially the structure and application method of a silicon photomultiplier detector with position detection sensitivity. [0002] technical background [0003] Photoelectric position detectors are an important class of image sensing devices in modern industrial inspection, aviation docking, three-dimensional shape measurement, robot vision and biomedicine. At present, the main image sensors include charge-coupled devices (CCD-chargecoupled devices), photodiode array detectors, and position-sensitive detectors based on PIN and APD. CCD is an array-type device composed of discrete oxide semiconductor (MOS) capacitor arrays. It has the ability to store and transfer information charges. Through external circuit control, the signal of each pixel is sequentially read to obtain image information. But because CCD is an array type (segmentation type) device, the size of the pixel limits the res...

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Problems solved by technology

[0004] Aiming at the problem that the resolution of the current CCD array device is limited by the pixel size and the response speed is slow; the photodiode array can only detect substances with ultraviolet absorption; the gain of the PIN type and APD type position sensitive detector is low; the general silicon photomultiplier detector ( SiPM) does not have position sensitive limitations

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