A kind of mems semiconductor gas sensor and its manufacturing method, and gas detection method
A gas sensor and manufacturing method technology, applied in semiconductor devices, electric solid state devices, fluid velocity measurement, etc., can solve the problem of inability to respond to recovery rate, linearity, selective compensation, inability to effectively reduce adverse effects of ambient temperature, inability to Control sensor performance changes and other issues to ensure performance, reduce test errors, and improve performance
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Embodiment 1
[0035] A MEMS semiconductor gas sensor, comprising a substrate 1 with a hollow portion 9, a sensing module, a control module and a temperature detection module; the sensing module is formed on the substrate 1, and the sensing module includes sequentially stacked The first insulating layer 2, the heating resistor 3, the second insulating layer 4, the test electrode 5 and the gas sensitive layer 6, wherein the first insulating layer 2 is arranged on the substrate 1 in a state of covering the hollow portion 9, The upper surface of the gas-sensitive layer 6 is exposed to the gas to be measured; the temperature detection module can be a related product with a temperature measurement function, such as a temperature sensitive resistor, a temperature sensor, etc., and the control module is selected from those with a control function. Various controllers, such as single-chip microcomputer, DSP (digital signal processor), FPGA (field programmable gate array), programmable logic controlle...
Embodiment 2
[0038] Please see attached figure 1, a MEMS semiconductor gas sensor of the present invention includes a substrate 1 having a hollow portion 9 and a sensing module, an ASIC circuit 8 and a temperature measuring resistor 7 respectively formed on the substrate 1; the sensing module includes a bottom-up The first insulating layer 2, the heating resistor 3, the second insulating layer 4, the test electrode 5 and the gas sensitive layer 6 are stacked, wherein the first insulating layer 2 is arranged on the substrate 1 in the state of covering the hollow part 9, and the gas The upper surface of the sensitive layer 6 is exposed to the gas to be measured. The temperature measuring resistor 7 , the heating resistor 3 and the testing electrode 5 communicate with the ASIC circuit 8 respectively. In this embodiment, the substrate 1 is made of silicon wafers polished on both sides and oxidized on both sides; the heating resistor 3 and the temperature measuring resistor 7 are made of plati...
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