Resist composition and method for patterning
A technology of composition and resist, applied in the field of resist composition and pattern formation, capable of solving problems such as diffusion and damage to materials
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Embodiment 1
[0088] Charge 20.8 g (0.1 mol) of tetraethoxysilane, 17.8 g (0.1 mol) of methyltriethoxysilane, 24.8 g (0.1 mol) of 1-naphthyltrimethoxysilane, and 40 g of methyltrimethoxysilane into a 200 mL reaction vessel. isobutyl ketone. 16.2 g (0.9 moles) of 400 ppm nitric acid in water were added dropwise to the reaction vessel over 10 minutes. After the dropwise addition was complete, an aging reaction was performed for 2 hours. Next, 5 g of magnesium sulfate was added thereto to remove excess water. Then, the ethanol formed by the aging reaction was removed using a rotary evaporator until the amount of the reaction solution was reduced to 50 mL. To the resulting reaction solution was added 20 mL of methyl isobutyl ketone. Methyl isobutyl ketone was removed using an oven at 200° C., thereby preparing a resist composition having a solid concentration of 17.0% by weight.
Embodiment 2
[0090]Charge 25.3 g (0.1 mol) tetraethoxygermane, 22.3 g (0.1 mol) methyltriethoxygermane, 24.8 g (0.1 mol) 1-naphthyltrimethoxysilane and 40 g methyl isobutyl ketone. A solution of 16.2 g (0.9 moles) of 1% tetramethylammonium hydroxide in water was added dropwise to the reaction vessel over 10 minutes. After the dropwise addition was complete, an aging reaction was performed for 2 hours. Next, 5 g of magnesium sulfate was added thereto to remove excess water. Then, the ethanol formed by the aging reaction was removed using a rotary evaporator until the amount of the reaction solution was reduced to 50 mL. To the resulting reaction solution was added 20 mL of methyl isobutyl ketone. Methyl isobutyl ketone was removed using an oven at 200° C., thereby preparing a resist composition having a solid concentration of 16.1% by weight.
Embodiment 3
[0092] Each of the resist compositions prepared in Examples 1 and 2 was applied to a silicon wafer by a spin coating method (at 2000 rpm for 30 seconds), followed by heat treatment at 150°C. The thin line and the pattern 10 mm on the side were exposed at an accelerating voltage of 50 keV using an electron beam exposure device. The portion other than the exposed portion was removed (developed) with an aqueous solution of tetramethylammonium hydroxide. A gold electrode having a diameter of 1 mm was formed on the resulting insulating film pattern. Measure the dielectric constant. The average size of the voids was measured using TEM. The table describes the sensitivity to the electron beam (mC / cm 2 ), resolution (nm), dielectric constant, and average void size (nm).
[0093] surface
[0094]
[0095] As is clear from the table, by applying the foregoing methods, resist compositions each having high sensitivity and high resolution were prepared, and insulating film patterns...
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Abstract
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