Ultra-low power pseudo-differential structure non-volatile memory compatible with standard cmos process

Abstract

The invention discloses an ultra-low power consumption pseudodifferential structure nonvolatile memory compatible with a standard CMOS (Complementary Metal Oxide Semiconductor) process, solving the problem of high power consumption and shortening the area of a storage unit structure. The ultra-low power consumption pseudodifferential structure nonvolatile memory comprises a plurality of storage cells, wherein each storage cell comprises five transistors of a control tube, a first reading tube, a second reading tube, a first selectron and a second selectron, all the transistors are all of a single-polysilicon gate structure and are gate oxide layers with the same thicknesses, and the storage cells are compatible with a standard CMOS process. According to the ultra-low power consumption pseudodifferential structure nonvolatile memory, an FN (Fowler-Nordheim) tunneling effect is utilized for programming and erasing operations, and the problem of high power consumption is solved; only the five transistors are utilized to form a similar-differential structure, thus the ultra-low power consumption pseudodifferential structure nonvolatile memory is high in integration degree and small in area, enhances the reliability, and increases the reading speed.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics and relates to a storage technology of a semiconductor integrated circuit, more specifically, an ultra-low power consumption pseudo-differential structure nonvolatile memory compatible with a standard CMOS process. Background technique

[0002] Many integrated electronic devices require some amount of non-volatile memory. Usually non-volatile memory is used as an independent memory outside the chip or as a memory in the tag chip, mainly to store some control programs, processing instructions or items related to the chip for a long time without power supply. information and more.

[0003] Several types of non-volatile memory commonly used at present mainly include erasable programmable read-only memory EPROM, electrically erasable programmable read-only memory EEPROM and flash memory Flash Memory. In addition, there are ferroelectric memory FeRAM, magnetic random access memory MRAM and p...

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