Electroconductive film and preparation method and application thereof

A technology for conductive thin films and electroluminescent devices, which is used in semiconductor/solid-state device manufacturing, circuits, electric light sources, etc., and can solve the problems of low work function of conductive thin films.

Inactive Publication Date: 2014-10-29
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to provide a transparent conductive film of nanowires, a preparation method thereof, a substrate of an organic electroluminescent device using the conductive film, a preparation method thereof, and an organic electroluminescent film for the low work function of the conductive film. device

Method used

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  • Electroconductive film and preparation method and application thereof
  • Electroconductive film and preparation method and application thereof
  • Electroconductive film and preparation method and application thereof

Examples

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preparation example Construction

[0034] The preparation method of the above-mentioned conductive film 100 comprises the following steps:

[0035] S110, the TiO 2-x f x Target and Co 3 o 4The target and substrate are loaded into the vacuum chamber of the magnetron sputtering coating equipment, wherein the vacuum degree of the vacuum chamber is 1.0×10 -3 Pa~1.0×10 -5 Pa, wherein, x is 0.1-0.6.

[0036] In this embodiment, the TiO 2-x f x The target is obtained by the following steps: TiO 2 and TiF 4 The powder is mixed evenly, and the mixed powder is sintered at 900°C to 1300°C to make a target, wherein the TiF 4 The mole percentage of the powder in the mixture is 2.6%-17.6%.

[0037] The substrate is a glass substrate. Preferably, the substrate is ultrasonically cleaned with acetone, absolute ethanol and deionized water before use.

[0038] In this embodiment, the vacuum degree of the vacuum chamber is preferably 5×10 -4 Pa.

[0039] Step S120, sputtering TiO on the substrate surface 2-x f x La...

Embodiment 1

[0069] The powder with a purity of 99.9% is selected, and the TiO 2 and TiF 4 After the powder is uniformly mixed, it is sintered at 1250°C to form TiO with a diameter of 50 mm and a thickness of 2 mm. 1.6 f 0.4 Ceramic targets, among them, TiF 4 The molar percentage of the mixture is 12.5%, and the Co 3 o 4 The target material is loaded into the vacuum chamber. Then, the glass substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, and placed in a vacuum chamber. The distance between the target and the substrate is set to 60mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working gas flow rate of argon is 20sccm, the pressure is adjusted to 10Pa, the substrate temperature is 500°C, and the laser energy is 150W. Sequentially sputtered TiO 1.6 f 0.4 Target and Co 3 o 4 Target material, respectively deposited 250nm and 15nm films to obtain TiO 1.6 f 0.4 -Co 3 o 4 Dou...

Embodiment 2

[0076] The powder with a purity of 99.9% is selected, and the TiO 2 and TiF 4 After the powder is uniformly mixed, it is sintered at 1350°C to form TiO with a diameter of 35mm and a thickness of 2mm. 1.9 f 0.1 Ceramic targets, among them, TiF 4 The mole percentage of the mixture is 2.6%, and the Co 3 o 4 The target material is loaded into the vacuum chamber. Then, the glass substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, and placed in a vacuum chamber. The distance between the target and the substrate was set to 45 mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -5 Pa, the working gas flow rate of argon is 10 sccm, the pressure is adjusted to 3Pa, the substrate temperature is 250°C, and the laser energy is 300W. Sequentially sputtered TiO 1.9 f 0.1 Target and Co 3 o 4 Target material, respectively deposited 500nm and 5nm films to obtain TiO 1.9 f 0.1 -Co 3 o 4 M...

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Abstract

An electroconductive film includes a TiO2xFx layer and a Co3O4 layer which are stacked. The electroconductive film is a double-layer electroconductive film prepared by depositing the high work function Co3O4 layer on the surface of the TiO2xFx layer, the good electrical conductivity of the TiO2xFx layer can be maintained, and the work function of the electroconductive film can be improved remarkably. The invention also provides a preparation method and application of the electroconductive film.

Description

technical field [0001] The invention relates to semiconductor optoelectronic materials, in particular to a conductive thin film, a preparation method thereof, a substrate of an organic electroluminescent device using the conductive thin film, a preparation method thereof and an organic electroluminescent device. Background technique [0002] Conductive thin-film electrodes are the basic building blocks of organic electroluminescent devices (OLEDs), and their performance directly affects the luminous efficiency of the entire device. Among them, the doped semiconductor of cadmium oxide is the most widely studied transparent conductive film material in recent years, which has high visible light transmittance and low resistivity. However, in order to improve the luminous efficiency of the device, the transparent conductive film anode is required to have a higher surface work function. The work function of aluminum, gallium and indium-doped zinc oxide is generally only 4.3eV, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35H01L51/56H05B33/10H05B33/26
Inventor 周明杰陈吉星黄辉王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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